IGBT modul,YMIF1500-33 | I1-03,Yagona kalitlanuvchi IGBT,48mm,CRRC

parametr

符号

shartlar

minimal qiymat

xususiyat qiymatlari

maksimal qiymat

bir o'lchov

qaytish - chiqarish qisqa tutashganda to'plam - chiqarish kuchlanishi

V (BR )CES

V GE =0V, IC=10mA ,T vj =25°C

3300

V

集电极－发射极 饱和电压

V CEsat

IC=1500A,V GE =15V

T vj =25°C

24

2.9

V

T vj =125°C

2.95

3.4

V

T vj =150°C

3.1

3.6

to'plam to'xtash oqimi

ICES

V Ce =3300V,V GE =0V

T vj =25°C

1

mA

T vj =125°C

90

mA

T vj =150°C

150

qaytish oqimining oqimi

IGES

V Ce =0V, V GE =±20V, T vj =125°C

1

uA

qaytish - chiqarish chegaraviy kuchlanishi

V GE (th)

IC=240mA ,V Ce =V GE ,T vj =25°C

5.5

7

V

qaytish zaryadi

QG

IC=1500A,V Ce =1800V, V GE =-15V..15V

25

µC

kirish quvvati

Cies

V Ce =25V,V GE =0V,f=1MHz, T vj =25°C

260

nF

teskari uzatish kondensatori

Cres

6

ochilish kechikishi

t d ((on)

V CC =1800V,I C=1500A,

V GE =±15V,Cge=330nF,

R G（yoqilgan ）=1.0ω ,R G（o'chirilgan ）=1.5ω ,

Lσ =150nH,

induktiv yuklama

T vj =25°C

750

ns

T vj =125°C

730

T vj =150°C

730

ko'tarilish vaqti

t r

T vj =25°C

340

T vj =125°C

360

T vj =150°C

360

o'chirish kechikishi

t d(off)

V CC =1800V,I C=1500A,

V GE =±15V,Cge=330nF,

R G（yoqilgan ）=1.0ω ,R G（o'chirilgan ）=1.5ω ,

Lσ =150nH,

induktiv yuklama

T vj =25°C

2100

ns

T vj =125°C

2250

T vj =150°C

2290

tushish vaqti

t f

T vj =25°C

540

T vj =125°C

570

T vj =150°C

580

ochilish energiyasi

Eyoqilgan

V CC =1800V,I C=1500A,

V GE =±15V,Cge=330nF,

R G（yoqilgan ）=1.0ω ,R G（o'chirilgan ）=1.5ω ,

Lσ =150nH,

induktiv yuklama

T vj =25°C

1450

mJ

T vj =125°C

1900

T vj =150°C

2100

o'chirish energiyasi

Eo'chirilgan

V CC =1800V,I C=1500A,

V GE =±15V,Cge=330nF,

R G（yoqilgan ）=1.0ω ,R G（o'chirilgan ）=1.5ω ,

Lσ =150nH,

induktiv yuklama

T vj =25°C

2400

mJ

T vj =125°C

2950

T vj =150°C

3200

parametr

符号

shartlar

minimal qiymat

xususiyat qiymatlari

maksimal qiymat

单位

二极管正向平均电压

V F

IF =1500A

T vj =25°C

2.15

2.6

V

T vj =125°C

2.25

2.7

T vj =150°C

2.25

2.7

teskari tiklanish toki

Irr

V CC =1800V,

IC=1500A,

d iF /dt=4800A/

aQSH

T vj =25°C

1250

A

T vj =125°C

1420

A

T vj =150°C

1150

teskari tiklanish zaryadi

Qrr

T vj =25°C

880

µC

T vj =125°C

1800

µC

T vj =150°C

1980

teskari tiklanish energiyasi

Erek

T vj =25°C

1550

mJ

T vj =125°C

2450

T vj =150°C

2720