Qisqacha kirish soʻzlari 
Tez Oʻtilish Thyristor Mo dullari ,MK(H)x250  MK250 ,25 0A .Havo sovutish,TECHSEM tomonidan ishlab chiqarilgan.   
 
| VRRM,VDRM    | Tur va kontur  | 
| 600V  | MKx250-06-415F3  | MHx250-06-415F3  | 
| 800V  | MKx250-08-415F3  | MHx250-08-415F3  | 
| 1000V  | MKx250-10-415F3  | MHx250-10-415F3  | 
| 1200V  | MKx250-12-415F3  | MHx250-12-415F3  | 
| 1400V  | MKx250-14-415F3  | MHx250-14-415F3  | 
| 1600V  | MKx250-16-415F3  | MHx250-16-415F3  | 
| 1800V  | MKx250-18-415F3  | MHx250-18-415F3  | 
| 1800V  | MK250-18-415F3G  |   | 
 
MKx har qanday turini anglatadi   MKC,    MKA,    MKK    
MHx har qanday turini anglatadi   MHC,    MHA,    MHK   
Xususiyatlari :
- Izolyatsiyalangan o'rnatish bazasi 2500V~   
- 
Bosimli kontakt texnologiyasi bilan    Kuchaytirilgan quvvat aylanish imkoniyati   
- Joy va vaznni tejash 
Oddiy qoʻllanmalar 
- Inverter 
- Induktiv isitish 
- Chopper 
 
|   Simvol  |   XUShMATLAR  |   Sinov sharoitlari  | Tj( ℃ ) | Qiymat  |   Бирлик  | 
| Min  | TUR  | Maksimal  | 
| IT(AV)  | O'rtacha yoqilgan holatdagi tok  | 180° yarim sinus to'lqini 50 Hz Yagona tomon sovutilgan,Tc=85 ℃  |   125 |   |   | 250 | A  | 
| IT ((RMS)  | RMS ish holatidagi tok    |   |   | 392 | A  | 
| Idrm Irrm  | Takroriy cho'qqi oqim  | vDRM va VRRM da  | 125 |   |   | 80 | mA  | 
| ITSM  | To'lqin yoqilgan holatdagi tok  | 10ms yarim sinus to'lqini VR=60%VRRM    |   125 |   |   | 5.60 | kA  | 
| Ман 2t  | Qayta birikish uchun I2t  |   |   | 157 | 103A 2s  | 
| VTO  | Chiziqli kuchlanishni  |   |   125 |   |   | 1.30 | V  | 
| rt  | Yoqilgan holatdagi qiyshiq qarshilik  |   |   | 0.38 | m  | 
| VTM  | Eng yuqori yoqilgan holatdagi kuchlanish  | ITM=750A  | 25 |   |   | 2.69 | V  | 
| dv/dt  | O'chirilgan holat voltajining tanqidiy ko'tarilish tezligi  | VDM=67%VDRM  | 125 |   |   | 800 | V/μs  | 
| di/dt  | O'rnatilgan holatdagi oqimning o'sishining kritik darajasi  | Gate manbai 1.5A    tr ≤0.5μs Takroriy    | 125 |   |   | 200 | A/μs  | 
| tq  | O'zaro o'zgartirilgan o'chirish vaqti  | ITM=300A, tp=4000μs, VR=100V dv/dt=30V/μs ,di/dt=-20A/μs  | 125 | 20 |   | 40 | μs  | 
| 25 | 6 |   | 16 | μs  | 
| IGT  | Eshikni ishga tushirish tok  |     VA= 12V, IA= 1A  |     25 | 30 |   | 200 | mA  | 
| Vgt  | Eshikni ishga tushirish kuchlanishi  | 0.8 |   | 3.0 | V  | 
| IH  | Ushlab turish toki  | 20 |   | 200 | mA  | 
| IL  | Qayta ushlab turish toki  |   |   | 1000 | mA  | 
| VGD  | Ishga tushirilmagan eshik kuchlanishi  | VDM= 67%VDRM  | 125 |   |   | 0.2 | V  | 
| Rth(j-c)  | Termal qarshilik kesishdan qutiga  | Har bir chip uchun bir tomonlama sovutilgan  |   |   |   | 0.100 | ℃ /W | 
| Rth(c-h)  | Qizil qarshilik quti va issiqlik chiqaruvchi o'rtasida  | Har bir chip uchun bir tomonlama sovutilgan  |   |   |   | 0.040 | ℃  /W | 
| VISO  | Izolyatsiya kuchlanishi  | 50Hz,R.M.S,t= 1min,Iiso:1mA(MAX)    |   | 2500 |   |   | V  | 
|   Fm  | Terminal ulanish momenti (M10)  |   |   | 10.0 |   | 12.0 | N·m  | 
| O'rnatish momenti (M6)  |   |   | 4.5 |   | 6.0 | N·m  | 
| Tvj  | Junction harorati  |   |   | -40 |   | 125 | ℃  | 
| TSTG  | Saqlash harorati  |   |   | -40 |   | 125 | ℃  | 
| Wt  | Og'irlik  |   |   |   | 1260 |   | g  | 
| Koʻrinish  | 415F3    |