Qisqacha kirish soʻzlari
CRRC tomonidan ishlab chiqarilgan yuqori voltli, yagona kalitli IGBT modullari. 3300V 1000A.
Kalit Parametrlar
V CES |
3300 V |
V CE (sat ) |
(Typ) 2.40 V |
Ман C |
(Maks) 1000 A |
Ман C( RM ) |
(Maks) 2000 A |
Oddiy qoʻllanmalar
- Tortishish drayverlari
- Motor Boshqaruvchilari
-
Aqlli Tarmoq
-
Yuqori Xavfsizlik Inverter
Oddiy qoʻllanmalar
- Tortishish drayverlari
- Motor
- Motor Boshqaruvchilari
- Smart Grid
- Yuqori Ishonchlilik Inverteri
Absolyut Maksimal Reyting
(Simvol) |
(Parametr) |
(Sinov Shartlari) |
(qiymat) |
(Birlik) |
VCES |
Kollektor-emitter kuchlanishi |
VGE = 0V, TC = 25 °C |
3300 |
V |
VGES |
Chiqargichning kuchlanishi |
TC= 25 °C |
± 20 |
V |
I C |
Kollektor-emitter oqimi |
TC = 95 °C |
1000 |
A |
IC(PK) |
Pik kollektor oqimi |
t P= 1ms |
2000 |
A |
P max |
Maks. transistor quvvat yo'qotilishi |
Tvj = 150 °C, TC = 25 °C |
10.4 |
kw |
I 2t |
Diod I2t |
VR =0V, t P = 10ms, Tvj = 150 °C |
320 |
kA2s |
Visol |
Izolyatsiya kuchlanishi – modulga qarab |
Umumiy terminal bazasi plitkasi bilan bog'langan),
AC RMS,1 min, 50Hz,TC= 25 °C
|
6000 |
V |
Q PD |
Qismiy discharge – modul uchun |
IEC1287. V 1 = 3500V, V 2 = 2600V, 50Hz RMS, TC= 25 °C |
10 |
pC |
Elektr xususiyatlari
(Simvol) |
(Parametr) |
(Sinov Shartlari) |
(Min) |
(Typ) |
(Maks) |
(Birlik) |
|
I CES
|
Kollektorni to'xtatish joriy
|
VGE = 0V, VCE = VCES |
|
|
1 |
mA |
VGE = 0V, VCE = VCES, TC = 125 ° C |
|
|
60 |
mA |
VGE = 0V, VCE = VCES, TC = 150 ° C |
|
|
100 |
mA |
I GES |
Darvoza oqimi
|
VGE = ±20V, VCE = 0V |
|
|
1 |
μA |
VGE (TH) |
Darvoza threshold kuchlanishi |
I C= 80mA, VGE= VCE |
5.50 |
6.10 |
7.00 |
V |
|
VCE
|
(*1) (oʻtirgan)
|
Kollektor-emitter to'yinganligi
voltaj
|
VGE= 15V, I C= 1000A |
|
2.40 |
2.90 |
V |
VGE= 15V, I C= 1000A,Tvj = 125 ° C |
|
2.95 |
3.40 |
V |
VGE= 15V, I C= 1000A,Tvj = 150 ° C |
|
3.10 |
3.60 |
V |
I F |
Diodning oldinga oqimi |
DC |
|
1000 |
|
A |
I FRM |
Diodning maksimal oldingi oqimi
|
t P = 1ms |
|
2000 |
|
A |
|
VF(*1)
|
Diodning oldinga kuchlanishi
|
I F= 1000A |
|
2.10 |
2.60 |
V |
I F= 1000A, Tvj= 125 ° C |
|
2.25 |
2.70 |
V |
I F= 1000A, Tvj= 150 ° C |
|
2.25 |
2.70 |
V |
C ies |
Kirish sig'imi
|
VCE= 25V, VGE= 0V, f = 1MHz |
|
170 |
|
nF |
Q g |
Darvoza zaryadi |
±15V |
|
17 |
|
μC |
C res |
Teskari o'tkazish sig'imi |
VCE= 25V, VGE= 0V, f = 1MHz |
|
4 |
|
nF |
L M |
Modulning induktansiyasi
|
|
|
15 |
|
nH |
R INT |
Ichki tranzistor qarshiligi |
|
|
165 |
|
μΩ |
|
I SC
|
Qisqa tutashuv oqimi, ISC |
Tvj = 150°C, VCC = 2500V, VGE≤15V, tp≤10μs,
VCE(max) = VCES – L (*2)×di/dt, IEC 6074-9
|
|
3900
|
|
A
|
td(off) |
O'chirish kechikish vaqti |
I C =1000A
VCE =1800V
C GE = 220nF
L ~ 150nH
VGE = ±15V
RG(ON) = 1.5Ω
RG(OFF)= 2.2Ω
|
|
1800 |
|
ns |
t f |
Pasayish vaqti |
|
530 |
|
ns |
E OFF |
O'chirish energiya yo'qotilishi |
|
1600 |
|
mJ |
td(on) |
O'chirish kechikish vaqti |
|
680 |
|
ns |
t r |
O'sish vaqti |
|
320 |
|
ns |
EON |
O'chirish energiya yo'qotilishi |
|
1240 |
|
mJ |
Q rr |
Diodning teskari tiklanish zaryadi |
I F =1000A
VCE =1800V
diF/dt =3300A/us
|
|
780 |
|
μC |
I rr |
Diodning teskari tiklanish joriy |
|
810 |
|
A |
E rec |
Diodning teskari tiklanish energiyasi |
|
980 |
|
mJ |
td(off) |
O'chirish kechikish vaqti |
I C =1000A
VCE =1800V
C GE = 220nF
L ~ 150nH
VGE = ±15V
RG(ON) = 1.5Ω
RG(OFF)= 2.2Ω
|
|
1940 |
|
ns |
t f |
Pasayish vaqti |
|
580 |
|
ns |
E OFF |
O'chirish energiya yo'qotilishi |
|
1950 |
|
mJ |
td(on) |
O'chirish kechikish vaqti |
|
660 |
|
ns |
t r |
O'sish vaqti |
|
340 |
|
ns |
EON |
O'chirish energiya yo'qotilishi |
|
1600 |
|
mJ |
Q rr |
Diodning teskari tiklanish zaryadi |
I F =1000A
VCE =1800V
diF/dt =3300A/us
|
|
1200 |
|
μC |
I rr |
Diodning teskari tiklanish joriy |
|
930 |
|
A |
EN
