YMIBH250-33, IGBT Moduli, Yarim Pulka IGBT, CRRC

Simvol

Parametr

Sinov sharoitlari

Qiymat

Бирлик

VCES

Kollektor-emitter kuchlanishi

VGE = 0V, TC = 25 °C

3300

V

VGES

Chiqargichning kuchlanishi

TC= 25 °C

± 20

V

IC

Kollektor-emitter oqimi

TC = 100 °C

250

A

IC(PK)

Pik kollektor oqimi

tp=1ms

500

A

Pmax

Maks. transistor quvvat yo'qotilishi

Tvj = 150 °C, TC = 25 °C

2.6

kw

I2t

Diod I2t

VR = 0V, tP = 10 ms, Tvj = 150 °C

20

kA2s

Visol

Izolatsiya kuchlanmasi - modul bo'yicha

( Umumiy terminalni asosiy plitaga), AC RMS,1 daqiqa, 50Hz, TC= 25 °C

6

кВ

QPD

Qisman discharge - modul boshiga

IEC1287. V1=6900V,V2=5100V,50Hz RMS

10

pC

Simvol

Parametr

Sinov sharoitlari

Min.

Tip.

Maksimal

Бирлик

ICES

Kollektorni to'xtatish joriy

VGE = 0V, VCE = VCES

1

mA

VGE = 0V, VCE = VCES, TC=125 °C

15

mA

VGE = 0V, VCE = VCES, TC=150 °C

25

mA

IGES

Darvoza oqimi

VGE = ±20V, VCE = 0V

1

μA

VGE (TH)

Darvoza threshold kuchlanishi

IC = 20mA, VGE = VCE

5.5

6.1

7.0

V

VCE (sat)

Kollektor-emitter to'yinganligi kuchlanish

VGE =15V, IC = 250A

2.50

2.80

V

VGE =15V, IC = 250A, Tvj = 125 °C

3.15

3.45

V

VGE =15V, IC = 250A, Tvj = 125 °C

3.30

3.60

V

IF

Diodning oldinga oqimi

DC

250

A

IFRM

Diodning yuqori oqimi oldinga

tP = 1 ms

500

A

VF(*1)

Diodning oldinga kuchlanishi

IF = 250A, VGE = 0

2.10

2.40

V

IF = 250A, VGE = 0, Tvj = 125 °C

2.25

2.55

V

IF = 250A, VGE = 0, Tvj = 150 °C

2.25

2.55

V

ISC

Qisqa uzilish oqimi

Tvj = 150°C, VCC = 2500V, VGE ≤15V, tp ≤10μs,

VCE ((max) = VCES L ((*2) ×di/dt, IEC 6074-9

900

A

ICES

Kollektorni to'xtatish joriy

VGE = 0V, VCE = VCES

1

mA

VGE = 0V, VCE = VCES, TC=125 °C

15

mA

VGE = 0V, VCE = VCES, TC=150 °C

25

mA

IGES

Darvoza oqimi

VGE = ±20V, VCE = 0V

1

μA

VGE (TH)

Darvoza threshold kuchlanishi

IC = 20mA, VGE = VCE

5.5

6.1

7.0

V

VCE (sat)

Kollektor-emitter to'yinganligi

kuchlanish

VGE =15V, IC = 250A

2.50

2.80

V

VGE =15V, IC = 250A, Tvj = 125 °C

3.15

3.45

V

VGE =15V, IC = 250A, Tvj = 125 °C

3.30

3.60

V

IF

Diodning oldinga oqimi

DC

250

A

IFRM

Diodning yuqori oqimi oldinga

tP = 1 ms

500

A

VF(*1)

Diodning oldinga kuchlanishi

IF = 250A, VGE = 0

2.10

2.40

V

IF = 250A, VGE = 0, Tvj = 125 °C

2.25

2.55

V

IF = 250A, VGE = 0, Tvj = 150 °C

2.25

2.55

V

ISC

Qisqa uzilish oqimi

Tvj = 150°C, VCC = 2500V, VGE ≤15V, tp ≤10μs,

VCE ((max) = VCES L ((*2) ×di/dt, IEC 6074-9

900

A

t d(off)

O'chirish kechikish vaqti

IC =250A,

V Ce = 1800V, V GE = ±15V, R G(OFF) = 9.0Ω , CGE = 56nF,

LS = 150nH,

T vj = 25 °C

1480

ns

T vj = 125 °C

1550

T vj = 150 °C

1570

t f

Pasayish vaqti

T vj = 25 °C

1280

ns

T vj = 125 °C

1920

T vj = 150 °C

2120

EO'chirilgan

O'chirish energiya yo'qotilishi

T vj = 25 °C

300

mJ

T vj = 125 °C

380

T vj = 150 °C

400

t d ((on)

O'chirish kechikish vaqti

IC =250A,

V Ce = 1800V, V GE = ±15V, R G(ON) = 6.0Ω , CGE = 56nF,

LS = 150nH,

T vj = 25 °C

640

ns

T vj = 125 °C

650

T vj = 150 °C

650

t r

O'sish vaqti

T vj = 25 °C

220

ns

T vj = 125 °C

235

T vj = 150 °C

238

EYoqilgan

Ishga tushirish energiyasi yoʻqotish

T vj = 25 °C

395

mJ

T vj = 125 °C

510

T vj = 150 °C

565

S rr

Diod orqaga

qaytarib olish haqi

IF =250A,

V Ce = 1800V,

- d i F /dt = 1200A/us, (T vj = 125 °C).

T vj = 25 °C

190

μC

T vj = 125 °C

295

T vj = 150 °C

335

Irr

Diod orqaga

qayta tiklash oqimi

T vj = 25 °C

185

A

T vj = 125 °C

210

T vj = 150 °C

216

Erek

Diod orqaga

energiyani tiklash

T vj = 25 °C

223

mJ

T vj = 125 °C

360

T vj = 150 °C

410