Qisqacha kirish soʻzlari
Tiristor/Diod Moduli, MTx1200, MFx1200 ，1200A ,Havo sovutish ,tECHSEM tomonidan ishlab chiqarilgan.
VRRM,VDRM |
Tur va kontur |
600V |
MTx1200-06-412F3 |
MFx1200-06-412F3 |
800V |
MTx1200-08-412F3 |
MFx1200-08-412F3 |
1000V |
MTx1200-10-412F3 |
MFx1200-10-412F3 |
1200V |
MTx1200-12-412F3 |
MFx1200-12-412F3 |
1400V |
MTx1200-14-412F3 |
MFx1200-14-412F3 |
1600V |
MTx1200-16-412F3 |
MFx1200-16-412F3 |
1800V |
MTx1200-18-412F3 |
MFx1200-18-412F3 |
1800V |
MT1200-18-412F3G |
|
MTx har qanday turlari MTC, MTA, MTK
MFx har qanday tur uchun e ning MFC, Tashqi ishlar vazirligi, MFK
Xususiyatlari
- Izolyatsiyalangan o'rnatish bazasi 3000V~
- Bosimli kontakt texnologiyasi bilan
- Kuchaytirilgan quvvat aylanish imkoniyati
- Joy va vaznni tejash
Oddiy qoʻllanmalar
- AC/DC motorli dvigatellar
- Turli to'g'rilovchilar
- PWM inverter uchun DC ta'minoti
|
Simvol
|
XUShMATLAR
|
Sinov sharoitlari
|
Tj( ℃ ) |
Qiymat |
Бирлик
|
Min |
TUR |
Maksimal |
IT(AV) |
O'rtacha yoqilgan holatdagi tok |
180° yarim sinus to'lqini 50Hz
Bir tomoni sovutilgan, TC=60 ℃
|
125
|
|
|
1200 |
A |
IT ((RMS) |
RMS ish holatidagi tok |
|
|
1884 |
A |
Idrm Irrm |
Takroriy cho'qqi oqim |
vDRM va VRRM da |
125 |
|
|
55 |
mA |
ITSM |
To'lqin yoqilgan holatdagi tok |
VR=60%VRRM,,t=10ms yarim sinus, |
125 |
|
|
26 |
kA |
I2t |
Qayta birikish uchun I2t |
125 |
|
|
3380 |
103A 2s |
VTO |
Chiziqli kuchlanishni |
|
125
|
|
|
0.70 |
V |
rt |
Yoqilgan holatdagi qiyshiq qarshilik |
|
|
0.14 |
mΩ |
VTM |
Eng yuqori yoqilgan holatdagi kuchlanish |
ITM=3000A |
25 |
|
|
1.96 |
V |
dv/dt |
O'chirilgan holat voltajining tanqidiy ko'tarilish tezligi |
VDM=67%VDRM |
125 |
|
|
1000 |
V/μs |
di/dt |
O'rnatilgan holatdagi oqimning o'sishining kritik darajasi |
Gate manbai 1.5A
tr ≤0.5μs Takroriy
|
125 |
|
|
200 |
A/μs |
IGT |
Eshikni ishga tushirish tok |
VA=12V, IA=1A
|
25
|
30 |
|
200 |
mA |
Vgt |
Eshikni ishga tushirish kuchlanishi |
0.8 |
|
3.0 |
V |
IH |
Ushlab turish toki |
10 |
|
200 |
mA |
IL |
Qayta ushlab turish toki |
|
|
1500 |
mA |
VGD |
Ishga tushirilmagan eshik kuchlanishi |
VDM=67%VDRM |
125 |
|
|
0.20 |
V |
Rth(j-c) |
Termal qarshilik kesishdan qutiga |
180 da ° sinus. Har bir chip uchun bitta tomon sochiladi |
|
|
|
0.048 |
℃ /W |
Rth(c-h) |
Qizil qarshilik quti va issiqlik chiqaruvchi o'rtasida |
180 da ° sinus. Har bir chip uchun bitta tomon sochiladi |
|
|
|
0.020 |
℃ /W |
VISO |
Izolyatsiya kuchlanishi |
50Hz, R.M.S, t=1min, Iiso:1mA(max) |
|
3000 |
|
|
V |
|
Fm
|
Terminal ulanish vring (M12) |
|
|
12.0 |
|
16.0 |
N·m |
O'rnatish vring (M8) |
|
|
10.0 |
|
12.0 |
N·m |
Tvj |
Junction harorati |
|
|
-40 |
|
125 |
℃ |
TSTG |
Saqlash harorati |
|
|
-40 |
|
125 |
℃ |
Wt |
Og'irlik |
|
|
|
3660 |
|
g |
Koʻrinish |
412F3 |
EN
