MTx1200 MFx1200,Thyristor/Diode modullari,Havo sovutish

VRRM,VDRM

Tur va kontur

600V

MTx1200-06-412F3

MFx1200-06-412F3

800V

MTx1200-08-412F3

MFx1200-08-412F3

1000V

MTx1200-10-412F3

MFx1200-10-412F3

1200V

MTx1200-12-412F3

MFx1200-12-412F3

1400V

MTx1200-14-412F3

MFx1200-14-412F3

1600V

MTx1200-16-412F3

MFx1200-16-412F3

1800V

MTx1200-18-412F3

MFx1200-18-412F3

1800V

MT1200-18-412F3G

Simvol

XUShMATLAR

Sinov sharoitlari

Tj( ℃ )

Qiymat

Бирлик

Min

TUR

Maksimal

IT(AV)

O'rtacha yoqilgan holatdagi tok

180° yarim sinus to'lqini 50Hz

Bir tomoni sovutilgan, TC=60 ℃

125

1200

A

IT ((RMS)

RMS ish holatidagi tok

1884

A

Idrm Irrm

Takroriy cho'qqi oqim

vDRM va VRRM da

125

55

mA

ITSM

To'lqin yoqilgan holatdagi tok

VR=60%VRRM,,t=10ms yarim sinus,

125

26

kA

I2t

Qayta birikish uchun I2t

125

3380

10³A ²s

VTO

Chiziqli kuchlanishni

125

0.70

V

rt

Yoqilgan holatdagi qiyshiq qarshilik

0.14

mΩ

VTM

Eng yuqori yoqilgan holatdagi kuchlanish

ITM=3000A

25

1.96

V

dv/dt

O'chirilgan holat voltajining tanqidiy ko'tarilish tezligi

VDM=67%VDRM

125

1000

V/μs

di/dt

O'rnatilgan holatdagi oqimning o'sishining kritik darajasi

Gate manbai 1.5A

tr ≤0.5μs Takroriy

125

200

A/μs

IGT

Eshikni ishga tushirish tok

VA=12V, IA=1A

25

30

200

mA

Vgt

Eshikni ishga tushirish kuchlanishi

0.8

3.0

V

IH

Ushlab turish toki

10

200

mA

IL

Qayta ushlab turish toki

1500

mA

VGD

Ishga tushirilmagan eshik kuchlanishi

VDM=67%VDRM

125

0.20

V

Rth(j-c)

Termal qarshilik kesishdan qutiga

180 da ° sinus. Har bir chip uchun bitta tomon sochiladi

0.048

℃ /W

Rth(c-h)

Qizil qarshilik quti va issiqlik chiqaruvchi o'rtasida

180 da ° sinus. Har bir chip uchun bitta tomon sochiladi

0.020

℃ /W

VISO

Izolyatsiya kuchlanishi

50Hz, R.M.S, t=1min, Iiso:1mA(max)

3000

V

Fm

Terminal ulanish vring (M12)

12.0

16.0

N·m

O'rnatish vring (M8)

10.0

12.0

N·m

Tvj

Junction harorati

-40

125

℃

TSTG

Saqlash harorati

-40

125

℃

Wt

Og'irlik

3660

g

Koʻrinish

412F3