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IT(AV) | 830A |
VDRM,VRRM | 500V 800V 1000V 1200V 1400V 1600V 1800 |
Features:
Typical Applications
SYMBOL |
CHARACTERISTIC |
TEST CONDITIONS | Tj(℃) | VALUE |
UNIT | |||
Min | Type | Max | ||||||
IT(RMS) |
RMS current | 50Hz sine wave Double side cooled, | TC=55°C |
125 |
|
| 1210 |
A |
TC=85°C |
|
| 830 | |||||
VDRM | Repetitive peak reverse voltage | VDRM tp=10ms VDSM=VDRM+100V | 125 | 500 |
| 1800 | V | |
IDRM | Repetitive peak current | at VDRM | 125 |
|
| 50 | mA | |
ITSM | Surge on-state current | 10ms half sine wave VR=0.6VRRM | 125 |
|
| 7.8 | kA | |
I2t | I2t for fusing coordination |
|
| 304 | A2s* 103 | |||
VTO | Threshold voltage |
| 125 |
|
| 1.00 | V | |
rT | On-state slope resistance |
|
| 0.85 | mΩ | |||
VTM | Peak on-state voltage | ITM= 1200A, F= 18kN | 125 |
|
| 2.70 | V | |
dv/dt | Critical rate of rise of off-state voltage | VDM=0.67VDRM | 125 |
|
| 50 | V/µs | |
di/dt | Critical rate of rise of on-state current | VDM= 67%VDRM to 1000A, Gate pulse tr ≤0.5μs IGM= 1.5A Repetitive | 125 |
|
| 50 | A/µs | |
IGT | Gate trigger current |
VA= 12V, IA= 1A |
25 | 20 |
| 350 | mA | |
VGT | Gate trigger voltage | 0.8 |
| 3.5 | V | |||
IH | Holding current | 20 |
| 400 | mA | |||
IL | Latching current |
|
|
|
| 500 | mA | |
VGD | Non-trigger gate voltage | VDM=67%VDRM | 125 |
|
| 0.3 | V | |
Rth(j-c) | Thermal resistance Junction to case | double side cooled Clamping force 18kN |
|
|
| 0.030 |
。C /W | |
Rth(c-h) | Thermal resistance case to heat sink |
|
|
| 0.008 | |||
Fm | Mounting force |
|
| 15 |
| 20 | kN | |
Tvj | Junction temperature |
|
| -40 |
| 125 | 。C | |
Tstg | Stored temperature |
|
| -40 |
| 140 | 。C | |
Wt | Weight |
|
|
| 200 |
| g | |
Outline | KA37 |
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