Brief introduction
IGBT module, produced by STARPOWER. 1200V 600A.
Features
-
Low VCE(sat) Trench IGBT technology
-
10μs short circuit capability
-
VCE(sat) with positive temperature coefficient
-
Maximum junction temperature 175oC
-
Low inductance case
-
Fast & soft reverse recovery anti-parallel FWD
-
Isolated copper baseplate using HPS DBC technology
Typical Applications
-
Inverter for motor drive
-
AC and DC servo drive amplifier
-
Uninterruptible power supply
Absolute Maximum Ratings TC=25oC unless otherwise noted
IGBT
Symbol |
Description |
Value |
Unit |
VCES |
Collector-Emitter Voltage |
1200 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current @ TC=25oC
@ TC= 100oC
|
925
600
|
A |
ICM |
Pulsed Collector Current tp=1ms |
1200 |
A |
PD |
Maximum Power Dissipation @ Tj=175oC |
3000 |
W |
Diode
Symbol |
Description |
Value |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
IF |
Diode Continuous Forward Current |
600 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
1200 |
A |
Module
Symbol |
Description |
Value |
Unit |
Tjmax |
Maximum Junction Temperature |
175 |
oC |
Tjop |
Operating Junction Temperature |
-40 to +150 |
oC |
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
IGBT Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat)
|
Collector to Emitter
Saturation Voltage
|
IC=600A,VGE=15V, Tj=25oC |
|
1.65 |
2.00 |
V
|
IC=600A,VGE=15V, Tj=125oC |
|
1.95 |
|
IC=600A,VGE=15V, Tj=150oC |
|
2.00 |
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=24.0mA,VCE=VGE, Tj=25oC |
5.6 |
6.2 |
6.8 |
V |
ICES |
Collector Cut-Off
Current
|
VCE=VCES,VGE=0V,
Tj=25oC
|
|
|
1.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25oC |
|
|
400 |
nA |
RGint |
Internal Gate Resistance |
|
|
0.5 |
|
Ω |
Cies |
Input Capacitance |
VCE=25V,f=100kHz, VGE=0V |
|
60.8 |
|
nF |
Cres |
Reverse Transfer
Capacitance
|
|
1.84 |
|
nF |
QG |
Gate Charge |
VGE=- 15…+15V |
|
4.64 |
|
μC |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=600A, RG=1.2Ω,LS=20nH, VGE=±15V,Tj=25oC
|
|
308 |
|
ns |
tr |
Rise Time |
|
42 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
431 |
|
ns |
tf |
Fall Time |
|
268 |
|
ns |
Eon |
Turn-On Switching
Loss
|
|
15.7 |
|
mJ |
Eoff |
Turn-Off Switching
Loss
|
|
51.3 |
|
mJ |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=600A, RG=1.2Ω,LS=20nH,
VGE=±15V,Tj=125oC
|
|
311 |
|
ns |
tr |
Rise Time |
|
49 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
467 |
|
ns |
tf |
Fall Time |
|
351 |
|
ns |
Eon |
Turn-On Switching
Loss
|
|
31.1 |
|
mJ |
Eoff |
Turn-Off Switching
Loss
|
|
69.4 |
|
mJ |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=600A, RG=1.2Ω,LS=20nH,
VGE=±15V,Tj=150oC
|
|
313 |
|
ns |
tr |
Rise Time |
|
51 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
475 |
|
ns |
tf |
Fall Time |
|
365 |
|
ns |
Eon |
Turn-On Switching
Loss
|
|
34.8 |
|
mJ |
Eoff |
Turn-Off Switching
Loss
|
|
71.1 |
|
mJ |
|
ISC
|
SC Data
|
tP≤10μs,VGE=15V,
Tj=150oC,VCC=800V, VCEM≤1200V
|
|
2400
|
|
A
|
Diode Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VF
|
Diode Forward
Voltage
|
IF=600A,VGE=0V,Tj=25oC |
|
1.85 |
2.30 |
V
|
IF=600A,VGE=0V,Tj= 125oC |
|
1.90 |
|
IF=600A,VGE=0V,Tj= 150oC |
|
1.95 |
|
Qr |
Recovered Charge |
VCC=600V,IF=600A,
-di/dt=13040A/μs,VGE=- 15V, Tj=25oC
|
|
38.1 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
524 |
|
A |
Erec |
Reverse Recovery Energy |
|
34.9 |
|
mJ |
Qr |
Recovered Charge |
VCC=600V,IF=600A,
-di/dt=11220A/μs,VGE=- 15V, Tj= 125oC
|
|
82.8 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
565 |
|
A |
Erec |
Reverse Recovery Energy |
|
54.4 |
|
mJ |
Qr |
Recovered Charge |
VCC=600V,IF=600A,
-di/dt=11040A/μs,VGE=- 15V, Tj= 150oC
|
|
94.7 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
589 |
|
A |
Erec |
Reverse Recovery Energy |
|
55.8 |
|
mJ |
Module Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
LCE |
Stray Inductance |
|
|
20 |
nH |
RCC’+EE’ |
Module Lead Resistance, Terminal to Chip |
|
0.35 |
|
mΩ |
RthJC |
Junction-to-Case (per IGBT)
Junction-to-Case (per Diode)
|
|
|
0.050
0.080
|
K/W |
|
RthCH
|
Case-to-Heatsink (per IGBT)
Case-to-Heatsink (per Diode)
Case-to-Heatsink (per Module)
|
|
0.033
0.052
0.010
|
|
K/W |
M |
Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6 |
2.5
3.0
|
|
5.0
5.0
|
N.m |
G |
Weight of Module |
|
300 |
|
g |
EN
