H38KFM,Non Symmetric Fast Turn-off Thyristor

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IT(AV)

Mean on-state current

180°half sine wave 50Hz Double side cooled,

TC=55°C

125

350

A

VDRM

Repetitive peak off-state voltage

tp=10ms

125

4000

4500

V

VRRM

Repetitive peak reverse voltage

125

1000

3000

V

IDRM IRRM

Repetitive peak current

at VDRM at VRRM

125

60

mA

ITSM

Surge on-state current

10ms half sine wave VR=0.6VRRM

125

5.0

kA

I2t

I2t for fusing coordination

125

A2s*103

VTO

Threshold voltage

125

1.48

V

rT

On-state slope resistance

2.00

mΩ

VTM

Peak on-state voltage

ITM=1000A, F=15kN

50≤tq≤60

25

3.60

V

61≤tq≤120

2.80

V

dv/dt

Critical rate of rise of off-state voltage

VDM=0.67VDRM

125

1000

V/μs

di/dt

Critical rate of rise of on-state current

VDM= 67%VDRM to 1000A,

Gate pulse tr ≤0.5μs IGM=1.5A

125

1200

A/μs

Qrr

Recovery charge

ITM=1000A, tp=4000µs, di/dt=-5A/µs, VR=100V

125

350

µC

tq

Circuit commutated turn-off time

ITM=1000A, tp=4000µs, VR=100V dv/dt=30V/µs, di/dt=-5A/µs

125

50

120

µs

IGT

Gate trigger current

VA=12V, IA=1A

25

40

250

mA

VGT

Gate trigger voltage

0.9

2.5

V

IH

Holding current

20

400

mA

IL

Latching current

500

mA

VGD

Non-trigger gate voltage

VDM=67%VDRM

125

0.3

V

Rth(j-c)

Thermal resistance Junction to case

At 1800 sine, double side cooled Clamping force 15kN

0.035

。C /W

Rth(c-h)

Thermal resistance case to heat sink

0.008

Fm

Mounting force

10

20

kN

Tvj

Junction temperature

-40

125

℃

Tstg

Stored temperature

-40

140

℃

Wt

Weight

250

g

Outline

KT33cT