YMIBD500-33,IGBT moduli,Ikki kalit IGBT,CRRC

(Simvol)

(Parametr)

(Sinov Shartlari)

(qiymat)

(Birlik)

VCES

Kollektor-emitter kuchlanishi

V GE = 0V,Tvj = 25°C

3300

V

V GES

Chiqargichning kuchlanishi

± 20

V

I C

Kollektor-emitter oqimi

T holat = 100 °C, Tvj = 150 °C

500

A

I C(PK)

Pik kollektor oqimi

1ms, T case = 140 °C

1000

A

P max

Maks. transistor quvvat yo'qotilishi

Tvj = 150°C, T holat = 25 °C

5.2

kw

I 2t

Diod I t

VR =0V, t P = 10ms, Tvj = 150 °C

80

kA2s

Visol

Izolyatsiya kuchlanishi – modulga qarab

Umumiy terminal bazasi plitkasi bilan bog'langan),

AC RMS,1 min, 50Hz

6000

V

Q PD

Qismiy discharge – modul uchun

IEC1287. V 1 = 3500V, V2 = 2600V, 50Hz RMS, TC = 25 °C

10

pC

T holat = 25 ° C T holat = 25° C agar ko'rsatilmagan boshqa

(Simvol )

(Parametr)

(Sinov Shartlari)

(DAQIQA )

(Typ )

(Maksimal )

(Бирлик )

I CES

Kollektorni to'xtatish joriy

V GE = 0V, V Ce = V CES

1

mA

V GE = 0V, V Ce = V CES , T holat =125 °C

30

mA

V GE = 0V, V Ce = V CES , T holat =150 °C

50

mA

I GES

Darvoza oqimi jorov

V GE = ±20V, V Ce = 0V

1

μA

V GE (TH)

Darvoza threshold kuchlanishi

I C = 40 mA , V GE = V Ce

5.50

6.10

7.00

V

V Ce (sat )(*1)

Kollektor-emitter to'yinganligi voltaj

V GE =15V, I C= 500A

2.40

2.90

V

V GE =15V, I C = 500A, T vj = 125 °C

2.95

3.40

V

V GE =15V, I C = 500A, T vj = 150 °C

3.10

3.60

V

I F

Diodning oldinga oqimi

DC

500

A

I FRM

Diodning maksimal oldinga jorov

t P = 1ms

1000

A

V F (*1)

Diodning oldinga kuchlanishi

I F = 500A

2.10

2.60

V

I F = 500A, T vj = 125 °C

2.25

2.70

V

I F = 500A, T vj = 150 °C

2.25

2.70

V

Cies

Kirish sig'imi

V Ce = 25V, V GE = 0V, f = 1MHz

90

nF

Qg

Darvoza zaryadi

±15V

9

μC

Cres

Teskari uzatish capa citance

V Ce = 25V, V GE = 0V, f = 1MHz

2

nF

L D

Modul induktivlik

25

nH

R INT

Ichki tranzistor qarshiligi

310

μΩ

I SC

Qisqa tutashuv joriy, ISC

T vj = 150°C, V CC = 2500V, V GE ≤15V, t p ≤10μs,

V Ce (maksimal ) = V CES – L (*2) ×di /dt ,IEC 6074-9

1800

A

td(off)

O'chirish kechikish vaqti

I C =500A VCE =1800V Cge = 100nF

L ~ 150nH

V GE = ±15V RG(ON) = 3.0Ω RG(OFF)= 4.5Ω

1720

ns

t f

Pasayish vaqti

520

ns

E OFF

O'chirish energiya yo'qotilishi

780

mJ

td(on)

O'chirish kechikish vaqti

650

ns

tr

O'sish vaqti

260

ns

EON

O'chirish energiya yo'qotilishi

730

mJ

Qrr

Diodning teskari tiklanish zaryadi

I F =500A

VCE =1800V

diF/dt =2100A/us

390

μC

I rr

Diodning teskari tiklanish joriy

420

A

Erec

Diodning teskari tiklanish energiyasi

480

mJ

(Simvol)

(Parametr)

(Sinov Shartlari)

(Min)

(Typ)

(Maks)

(Birlik)

td(off)

O'chirish kechikish vaqti

I C =500A VCE =1800V Cge = 100nF

L ~ 150nH V GE = ±15V RG(ON) = 3.0Ω RG(OFF)= 4.5Ω

1860

ns

t f

Pasayish vaqti

550

ns

E OFF

O'chirish energiya yo'qotilishi

900

mJ

td(on)

O'chirish kechikish vaqti

630

ns

tr

ko'tarilish vaqti O'sish vaqti

280

ns

EON

O'chirish energiya yo'qotilishi

880

mJ

Qrr

Diodning teskari tiklanish zaryadi

I F =500A

VCE =1800V

diF/dt =2100A/us

620

μC

I rr

Diodning teskari tiklanish joriy

460

A

Erec

Diodning teskari tiklanish energiyasi

760

mJ

(Simvol)

(Parametr)

(Sinov Shartlari)

(Min)

(Typ)

(Maks)

(Birlik)

td(off)

O'chirish kechikish vaqti

I C =500A VCE =1800V Cge = 100nF

L ~ 150nH V GE = ±15V RG(ON) = 3.0Ω RG(OFF)= 4.5Ω

1920

ns

t f

Pasayish vaqti

560

ns

E OFF

O'chirish energiya yo'qotilishi

1020

mJ

td(on)

O'chirish kechikish vaqti

620

ns

tr

O'sish vaqti

280

ns

EON

O'chirish energiya yo'qotilishi

930

mJ

Qrr

Diodning teskari tiklanish zaryadi

I F =500A

VCE =1800V

diF/dt =2100A/us

720

μC

I rr

Diodning teskari tiklanish joriy

490

A

Erec

Diodning teskari tiklanish energiyasi

900

mJ