YMIF2400-17,IGBT modul,Yuqori oqimli igbt modul, bitta o'chirish,CRRC

(Simvol)

(Parametr)

(Sinov Shartlari)

(qiymat)

(Birlik)

VCES

Kollektor-emitter kuchlanishi

V GE = 0V,Tvj = 25°C

1700

V

V GES

Chiqargichning kuchlanishi

± 20

V

I C

Kollektor-emitter oqimi

T holat = 100 °C, Tvj = 150 °C

2400

A

I C(PK)

Pik kollektor oqimi

tP = 1 ms

4800

A

P max

Max. transistor quvvat yo'qotilishi

Tvj = 150°C, T holat = 25 °C

19.2

kw

I 2t

Diod I2t

VR =0V, t P = 10ms, Tvj = 150 °C

1170

kA2s

Visol

Izolyatsiya kuchlanishi – modulga qarab

( Asosiy plitkaga umumiy terminallar),

AC RMS,1 min, 50Hz

4000

V

Q PD

Qismiy discharge – modul uchun

IEC1287. V 1 = 1800V, V2 = 1300V, 50Hz RMS

10

pC

Tcase = 25 °C T case = 25°C agar boshqa ko'rsatilmagan bo'lsa

(Simvol)

(Parametr)

(Sinov Shartlari)

(Min)

(Typ)

(Maks)

(Birlik)

I CES

Kollektorni to'xtatish joriy

V GE = 0V, VCE = VCES

1

mA

V GE = 0V, VCE = VCES , T case =125 °C

40

mA

V GE = 0V, VCE = VCES , T case =150 °C

60

mA

I GES

Darvoza oqimi

V GE = ±20V, VCE = 0V

1

μA

V GE (TH)

Darvoza threshold kuchlanishi

I C = 80mA, V GE = VCE

5.0

6.0

7.0

V

VCE (sat)

Kollektor-emitter to'yinganligi

voltaj

VGE =15V, IC = 2400A

1.75

V

VGE =15V, IC = 2400A,Tvj = 125 °C

1.95

V

VGE =15V, IC = 2400A,Tvj = 150 °C

2.05

V

I F

Diodning oldinga oqimi

DC

2400

A

I FRM

Diodning maksimal oldingi oqimi

t P = 1ms

4800

A

VF(*1)

Diodning oldinga kuchlanishi

IF = 2400A

1.65

V

IF = 2400A, Tvj = 125 °C

1.75

V

IF = 2400A, Tvj = 150 °C

1.75

V

Cies

Kirish sig'imi

VCE = 25V, V GE = 0V, f = 1MHz

400

nF

Qg

Darvoza zaryadi

±15V

19

μC

Cres

Teskari o'tkazish sig'imi

VCE = 25V, V GE = 0V, f = 1MHz

3

nF

L M

Modulning induktansiyasi

10

nH

R INT

Ichki tranzistor qarshiligi

110

μΩ

I SC

Qisqa tutashuv oqimi, ISC

Tvj = 150°C, V CC = 1000V, V GE ≤15V, tp ≤10μs,

VCE(max) = VCES – L (*2) ×di/dt, IEC 6074-9

12000

A

td(off)

O'chirish kechikish vaqti

I C = 2400A

VCE = 900V

L S ~ 50nH

V GE = ±15V

R G(ON) = 0.5Ω

R G(OFF)= 0.5Ω

2320

ns

t f

Pasayish vaqti

500

ns

E OFF

O'chirish energiya yo'qotilishi

1050

mJ

td(on)

O'chirish kechikish vaqti

450

ns

tr

O'sish vaqti

210

ns

EON

O'chirish energiya yo'qotilishi

410

mJ

Qrr

Diodning teskari tiklanish zaryadi

I F = 2400A

VCE = 900V

diF/dt =10000A/us

480

μC

I rr

Diodning teskari tiklanish joriy

1000

A

Erec

Diodning teskari tiklanish energiyasi

320

mJ

td(off)

O'chirish kechikish vaqti

I C = 2400A

VCE = 900V

L S ~ 50nH

V GE = ±15V

R G(ON) = 0.5Ω

R G(OFF)= 0.5Ω

2340

ns

t f

Pasayish vaqti

510

ns

E OFF

O'chirish energiya yo'qotilishi

1320

mJ

td(on)

O'chirish kechikish vaqti

450

ns

tr

O'sish vaqti

220

ns

EON

O'chirish energiya yo'qotilishi

660

mJ

Qrr

Diodning teskari tiklanish zaryadi

I F = 2400A

VCE = 900V

diF/dt =10000A/us

750

μC

I rr

Diodning teskari tiklanish joriy

1200

A

Erec

Diodning teskari tiklanish energiyasi

550

mJ

td(off)

O'chirish kechikish vaqti

I C = 2400A

VCE = 900V

L S ~ 50nH

V GE = ±15V

R G(ON) = 0.5Ω

R G(OFF)= 0.5Ω

2340

ns

t f

Pasayish vaqti

510

ns

E OFF

O'chirish energiya yo'qotilishi

1400

mJ

td(on)

O'chirish kechikish vaqti

450

ns

tr

O'sish vaqti

220

ns

EON

O'chirish energiya yo'qotilishi

820

mJ

Qrr

Diodning teskari tiklanish zaryadi

I F = 2400A

VCE = 900V

diF/dt =12000A/us

820

μC

I rr

Diodning teskari tiklanish joriy

1250

A

Erec

Diodning teskari tiklanish energiyasi

620

mJ