TG1400HF17H1-S300,IGBT Modul,Half Bridge IGBT,CRRC

Simvol

Parametr

Sinov sharoitlari

Qiymat

Бирлик

VCES

Kollektor-emitter kuchlanishi

VGE = 0V, TC = 25 °C

1700

V

VGES

Chiqargichning kuchlanishi

TC= 25 °C

± 20

V

IC

Kollektor-emitter oqimi

TC = 65 °C

1400

A

IC(PK)

集电极峰值 elektr oqimi

Pik kollektor oqimi

tp=1ms

2800

A

Pmax

Maks. transistor quvvat yo'qotilishi

Tvj = 150 °C, TC = 25 °C

6.25

kw

I2t

Diod I2t

VR = 0V, tP = 10 ms, Tvj = 150 °C

145

kA2s

Visol

Izolatsiya kuchlanmasi - modul bo'yicha

Asosiy plita uchun umumiy terminallar), AC RMS,1 min, 50 Hz, TC= 25 °C

4000

V

Simvol

Parametr

Sinov sharoitlari

Min.

Tip.

Max.

Бирлик

ICES

Kollektorni to'xtatish joriy

VGE = 0V, VCE = VCES

1

mA

VGE = 0V, VCE = VCES, TC=125 °C

20

mA

VGE = 0V, VCE = VCES, TC=150 °C

30

mA

IGES

Darvoza oqimi

VGE = ±20V, VCE = 0V

0.5

μA

VGE (TH)

Darvoza threshold kuchlanishi

IC = 30mA, VGE = VCE

5.00

6.00

7.00

V

VCE (sat)

Kollektor-emitter to'yinganligi voltaj

VGE = 15V, IC = 1400A

2.00

2.40

V

VGE = 15V, IC = 1400A, Tvj = 125 °C

2.45

2.70

V

VGE = 15V, IC = 1400A, Tvj = 150 °C

2.55

2.80

V

IF

Diodning oldinga oqimi

DC

1400

A

IFRM

Diodning yuqori oqimi oldinga

tP = 1 ms

2800

A

VF(*1)

Diodning oldinga kuchlanishi

IF = 1400A, VGE = 0

1.80

2.20

V

IF = 1400A, VGE = 0, Tvj = 125 °C

1.95

2.30

V

IF = 1400A, VGE = 0, Tvj = 150 °C

2.00

2.40

V

ISC

Qisqa uzilish oqimi

Tvj = 150°C, VCC = 1000V, VGE ≤15V, tp ≤10μs,

VCE ((max) = VCES L ((*2) ×di/dt, IEC 6074-9

5400

A

Cies

kirish quvvati

Kirish sig'imi

VCE = 25V, VGE = 0V, f = 100kHz

113

nF

Qg

Darvoza zaryadi

±15V

11.7

μC

Cres

Teskari o'tkazish sig'imi

VCE = 25V, VGE = 0V, f = 100kHz

3.1

nF

LM

Modulning induktansiyasi

10

nH

RINT

Ichki tranzistor qarshiligi

0.2

mΩ

td(off)

O'chirish kechikish vaqti

IC = 1400A,

VCE = 900V,

VGE = ±15V, RG ((OFF) = 1,8Ω, LS = 20nH,

dv/dt = 3000V/us (Tvj = 150 °C).

Tvj= 25 °C

1520

ns

Tvj= 125 °C

1580

Tvj= 150 °C

1600

tf

tushish vaqti Pasayish vaqti

Tvj= 25 °C

460

ns

Tvj= 125 °C

610

Tvj= 150 °C

650

Eof

O'chirish energiya yo'qotilishi

Tvj= 25 °C

460

mJ

Tvj= 125 °C

540

Tvj= 150 °C

560

td(on)

O'chirish kechikish vaqti

IC = 1400A,

VCE = 900V,

VGE = ±15V, RG ((ON) = 1,2Ω, LS = 20nH,

di/dt = 10000A/us (Tvj= 150 °C).

Tvj= 25 °C

400

ns

Tvj= 125 °C

370

Tvj= 150 °C

360

tr

O'sish vaqti

Tvj= 25 °C

112

ns

Tvj= 125 °C

120

Tvj= 150 °C

128

EON

O'chirish energiya yo'qotilishi

Tvj= 25 °C

480

mJ

Tvj= 125 °C

580

Tvj= 150 °C

630

Qrr

Diod orqaga

qaytarib olish haqi

IF = 1400A, VCE = 900V,

- diF/dt = 10000A/us (Tvj= 150 °C).

Tvj= 25 °C

315

μC

Tvj= 125 °C

440

Tvj= 150 °C

495

Irr

Diod orqaga

qayta tiklash oqimi

Tvj= 25 °C

790

A

Tvj= 125 °C

840

Tvj= 150 °C

870

Erec

Diod orqaga

energiyani tiklash

Tvj= 25 °C

190

mJ

Tvj= 125 °C

270

Tvj= 150 °C

290