|
Simvol
|
XUShMATLAR
|
Sinov sharoitlari
|
Tj( ℃ ) |
Qiymat |
Бирлик
|
Min |
TUR |
Maksimal |
|
IF(AV)
|
O'rtacha oldinga oqim |
TC=75 ℃ , Har bir Diod uchun |
150
|
|
|
100 |
A |
TC=85 ℃ , 20KHz, Modul uchun |
|
|
75 |
A |
IF(RMS) |
RMS oldinga oqim |
TC=75 ℃ , Har bir Diod uchun |
|
|
150 |
A |
IRRM |
Takroriy cho'qqi oqim |
vRRM da |
125 |
|
|
10 |
mA |
|
IFSM
|
To'lqin Oldinga Hozirgi |
VR=0V, tp=10ms |
45 |
|
|
1100 |
A
|
VR=0V,tp=8.3ms |
45 |
|
|
1200 |
Ман 2t |
Ман 2birlashtirish koordinatsiyasi uchun t |
VR=0V, tp=10ms |
45 |
|
|
6050 |
103A 2s |
VR=0V,tp=8.3ms |
45 |
|
|
7200 |
PD |
Maksimal quvvatni yoʻq qilish |
|
|
|
280 |
|
W |
|
VFM
|
Cho'qqi oldinga kuchlanish |
IFM= 100A
|
25 |
|
1.58 |
1.80 |
V
|
125 |
|
1.35 |
|
trr |
Teskari tiklanish vaqti |
I F= 1A, diF/dt=-200A/μs, VR=30V |
25 |
|
90 |
|
ns |
trr |
Teskari tiklanish vaqti |
VR=600V, IF=100A, diF/dt=-200A/μs
|
25
|
|
160 |
|
ns |
IRM |
Aylana toki |
|
10 |
|
A |
trr |
Teskari tiklanish vaqti |
125
|
|
400 |
|
ns |
IRM |
Aylana toki |
|
21 |
|
A |
Rth(j-c) |
Termal qarshilik kesishdan qutiga |
1800 sinusda. Har bir chip uchun bir tomonlama sovutilgan |
|
|
|
0.40 |
℃ /W |
VISO |
Izolyatsiya kuchlanishi |
50Hz,R.M.S,t= 1min |
|
3000 |
|
|
V |
|
Fm
|
Terminal ulanishi momenti(M5) |
|
|
2.55 |
|
3.45 |
N·m |
O'rnatish momenti (M6) |
|
|
4.25 |
|
5.75 |
N·m |
Tvj |
Junction harorati |
|
|
-40 |
|
150 |
℃ |
TSTG |
Saqlash harorati |
|
|
-40 |
|
125 |
℃ |
Wt |
Og'irlik |
|
|
|
100 |
|
g |
Koʻrinish |
224H3 |
EN
