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IGBT Module 1200V

IGBT Module 1200V

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GD3600SGT120C4S,IGBT Module,STARPOWER

1200V 3600A

Brand:
STARPOWER
Spu:
GD3600SGT120C4S
  • Introduction
  • Outline
Introduction

Brief introduction

IGBT module, produced by STARPOWER. 1200V 3600A.

Features

  • Low VCE(sat) Trench IGBT technology
  • 10μs short circuit capability
  • VCE(sat) with positive temperature coefficient
  • Low inductance case
  • Fast & soft reverse recovery anti-parallel FWD
  • Isolated copper baseplate using DBC technology

Typical Applications

  • AC Inverter Drives
  • Uninterruptible Power Supply
  • Wind Turbines

Absolute Maximum Ratings TC=25 unless otherwise noted

Symbol

Description

GD3600SGT120C4S

Units

VCES

Collector-Emitter Voltage

1200

V

VGES

Gate-Emitter Voltage

±20

V

IC

@ TC=25

@ TC=80

4800

A

3600

ICM(1)

Pulsed Collector Current tp= 1ms

7200

A

IF

Diode Continuous Forward Current

3600

A

IFM

Diode Maximum Forward Current

7200

A

PD

Maximum power Dissipation @ Tj=175

16.7

kW

Tjmax

Maximum Junction Temperature

175

TSTG

Storage Temperature Range

-40 to +125

VISO

Isolation Voltage RMS,f=50Hz,t=1min

2500

V

Mounting

Signal Terminal Screw:M4

1.8 to 2.1

Power Terminal Screw:M8

8.0 to 10

N.m

Torque

Mounting Screw:M6

4.25 to 5.75

Electrical Characteristics of IGBT TC=25 unless otherwise noted

Off Characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

V(BR)CES

Collector-Emitter

Breakdown Voltage

Tj=25

1200

V

ICES

Collector Cut-Off Current

VCE=VCES,VGE=0V, Tj=25

5.0

mA

IGES

Gate-Emitter Leakage

Current

VGE=VGES,VCE=0V, Tj=25

400

nA

On Characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VGE(th)

Gate-Emitter Threshold

Voltage

IC=145mA,VCE=VGE, Tj=25

5.0

5.8

6.5

V

VCE(sat)

Collector to Emitter

Saturation Voltage

IC=3600A,VGE=15V, Tj=25

1.70

2.15

V

IC=3600A,VGE=15V, Tj=125

2.00

2.45

Switching Characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

QG

Gate charge

VGE=- 15…+15V

35.0

μC

RGint

Internal Gate Resistor

Tj=25

0.5

Ω

td(on)

Turn-On Delay Time

VCC=600V,IC=3600A, RGon=0.8Ω,

RGoff=0.2Ω,

VGE=±15V,Tj=25

600

ns

tr

Rise Time

235

ns

td(off)

Turn-Off Delay Time

825

ns

tf

Fall Time

145

ns

Eon

Turn-On Switching Loss

/

mJ

Eoff

Turn-Off Switching Loss

/

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=3600A, RGon=0.8Ω,

RGoff=0.2Ω,

VGE=±15V,Tj=125

665

ns

tr

Rise Time

215

ns

td(off)

Turn-Off Delay Time

970

ns

tf

Fall Time

180

ns

Eon

Turn-On Switching Loss

736

mJ

Eoff

Turn-Off Switching Loss

569

mJ

Cies

Input Capacitance

VCE=25V,f=1MHz, VGE=0V

258

nF

Coes

Output Capacitance

13.5

nF

Cres

Reverse Transfer

Capacitance

11.7

nF

ISC

SC Data

tSC10μs,VGE=15V, Tj=125,VCC=900V, VCEM1200V

14000

A

LCE

Stray Inductance

10

nH

RCC’+EE

Module Lead Resistance, Terminal To Chip

0.12

mΩ

Electrical Characteristics of DIODE TC=25 unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VF

Diode Forward

Voltage

IF=3600A

Tj=25

1.65

2.15

V

Tj=125

1.65

2.15

Qr

Recovered Charge

IF=3600A,

VR=600V,

RGon=0.8Ω,

VGE=- 15V

Tj=25

360

μC

Tj=125

670

IRM

Reverse Recovery Current

Tj=25

2500

A

Tj=125

3200

Erec

Reverse Recovery Energy

Tj=25

97

mJ

Tj=125

180

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case (per IGBT)

9.0

K/kW

RθJC

Junction-to-Case (per Diode)

15.6

K/kW

RθCS

Case-to-Sink

(Conductive grease applied, per Module)

4

K/kW

Weight

Weight of Module

2250

g

Outline

gd3600sgt120c4sigbt modulestarpower-32

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