Brief introduction
IGBT module,produced by STARPOWER. 1200V 600A.
Features
- Low VCE(sat) Trench IGBT technology
- 10μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175oC
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using HPS DBC technology
Typical Applications
- Inverter for motor drive
- AC and DC servo drive amplifier
- Uninterruptible power supply
Absolute Maximum Ratings TF=25oC unless otherwise noted
IGBT
Symbol |
Description |
Value |
Unit |
VCES |
Collector-Emitter Voltage |
1200 |
V |
VGES |
Gate-Emitter Voltage
Transient Gate-Emitter Voltage
|
±20 ±30 |
V |
IC |
Collector Current @ TC=25oC @ TC=100oC |
925
600
|
A |
ICM |
Pulsed Collector Current tp=1ms |
1200 |
A |
PD |
Maximum Power Dissipation @ Tj=175oC |
3000 |
W |
Diode
Symbol |
Description |
Value |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
IF |
Diode Continuous Forward Current |
600 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
1200 |
A |
Module
Symbol |
Description |
Value |
Unit |
Tjmax |
Maximum Junction Temperature |
175 |
oC |
Tjop |
Operating Junction Temperature |
-40 to +150 |
oC |
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
IGBT Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat)
|
Collector to Emitter Saturation Voltage
|
IC=600A,VGE=15V, Tj=25oC |
|
1.65 |
2.00 |
V
|
IC=600A,VGE=15V, Tj=125oC |
|
1.95 |
|
IC=600A,VGE=15V, Tj=150oC |
|
2.00 |
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=24.0mA,VCE=VGE, Tj=25oC |
5.6 |
6.2 |
6.8 |
V |
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25oC |
|
|
1.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25oC |
|
|
400 |
nA |
RGint |
Internal Gate Resistance |
|
|
1.25 |
|
Ω |
Cies |
Input Capacitance |
VCE=25V,f=100kHz, VGE=0V |
|
60.8 |
|
nF |
Cres |
Reverse Transfer Capacitance |
|
1.84 |
|
nF |
QG |
Gate Charge |
VGE=-15…+15V |
|
4.64 |
|
μC |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=600A, RG=1.2Ω,LS=34nH, VGE=±15V,Tj=25oC
|
|
339 |
|
ns |
tr |
Rise Time |
|
95 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
468 |
|
ns |
tf |
Fall Time |
|
168 |
|
ns |
Eon |
Turn-On Switching Loss |
|
63.7 |
|
mJ |
Eoff |
Turn-Off Switching Loss |
|
56.4 |
|
mJ |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=600A, RG=1.2Ω,LS=34nH, VGE=±15V,Tj=125oC
|
|
418 |
|
ns |
tr |
Rise Time |
|
135 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
567 |
|
ns |
tf |
Fall Time |
|
269 |
|
ns |
Eon |
Turn-On Switching Loss |
|
108 |
|
mJ |
Eoff |
Turn-Off Switching Loss |
|
72.3 |
|
mJ |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=600A, RG=1.2Ω,LS=34nH, VGE=±15V,Tj=150oC
|
|
446 |
|
ns |
tr |
Rise Time |
|
151 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
602 |
|
ns |
tf |
Fall Time |
|
281 |
|
ns |
Eon |
Turn-On Switching Loss |
|
123 |
|
mJ |
Eoff |
Turn-Off Switching Loss |
|
78.2 |
|
mJ |
|
ISC
|
SC Data
|
tP≤10μs,VGE=15V,
Tj=150oC,VCC=800V, VCEM≤1200V
|
|
2400
|
|
A
|
Diode Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VF
|
Diode Forward Voltage |
IF=600A,VGE=0V,Tj=25oC |
|
1.85 |
2.30 |
V
|
IF=600A,VGE=0V,Tj=125oC |
|
1.90 |
|
IF=600A,VGE=0V,Tj=150oC |
|
1.95 |
|
Qr |
Recovered Charge |
VCC=600V,IF=600A,
-di/dt=5210A/μs,VGE=-15V, LS=34nH,Tj=25oC
|
|
49.3 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
300 |
|
A |
Erec |
Reverse Recovery Energy |
|
24.1 |
|
mJ |
Qr |
Recovered Charge |
VCC=600V,IF=600A,
-di/dt=3490A/μs,VGE=-15V, LS=34nH,Tj=125oC
|
|
85.2 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
314 |
|
A |
Erec |
Reverse Recovery Energy |
|
33.8 |
|
mJ |
Qr |
Recovered Charge |
VCC=600V,IF=600A,
-di/dt=3080A/μs,VGE=-15V, LS=34nH,Tj=150oC
|
|
102 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
318 |
|
A |
Erec |
Reverse Recovery Energy |
|
36.8 |
|
mJ |
Module Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
LCE |
Stray Inductance |
|
|
20 |
nH |
RCC’+EE’ |
Module Lead Resistance, Terminal to Chip |
|
0.35 |
|
mΩ |
RthJC |
Junction-to-Case (perIGBT) Junction-to-Case (per Diode) |
|
|
0.050 0.080 |
K/W |
|
RthCH
|
Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) |
|
0.033 0.052 0.010 |
|
K/W |
M |
Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6 |
2.5 3.0 |
|
5.0 5.0 |
N.m |
G |
Weight of Module |
|
300 |
|
g |
EN
