GD300HFX170C6S,IGBT Module,STARPOWER

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1700

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current @ TC=25oC @ TC= 100oC

493

300

A

ICM

Pulsed Collector Current tp=1ms

600

A

PD

Maximum Power Dissipation @ T =175oC

1829

W

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

1700

V

IF

Diode Continuous Forward Current

300

A

IFM

Diode Maximum Forward Current tp=1ms

600

A

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

175

oC

Tjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage RMS,f=50Hz,t=1min

4000

V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter Saturation Voltage

IC=300A,VGE=15V, Tj=25oC

1.85

2.20

V

IC=300A,VGE=15V, Tj=125oC

2.25

IC=300A,VGE=15V, Tj=150oC

2.35

VGE(th)

Gate-Emitter Threshold Voltage

IC= 12.0mA,VCE=VGE, Tj=25oC

5.6

6.2

6.8

V

ICES

Collector Cut-Off Current

VCE=VCES,VGE=0V, Tj=25oC

5.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25oC

400

nA

RGint

Internal Gate Resistance

2.5

Ω

Cies

Input Capacitance

VCE=25V,f=1MHz, VGE=0V

36.1

nF

Cres

Reverse Transfer Capacitance

0.88

nF

QG

Gate Charge

VGE=-15 …+15V

2.83

μC

td(on)

Turn-On Delay Time

VCC=900V,IC=300A, RGon=3.3Ω,

RGoff=4.7Ω, VGE=±15V,

Tj=25oC

213

ns

tr

Rise Time

83

ns

td(off)

Turn-Off Delay Time

621

ns

tf

Fall Time

350

ns

Eon

Turn-On Switching Loss

79.2

mJ

Eoff

Turn-Off Switching Loss

70.2

mJ

td(on)

Turn-On Delay Time

VCC=900V,IC=300A, RGon=3.3Ω,

RGoff=4.7Ω, VGE=±15V,

Tj= 125oC

240

ns

tr

Rise Time

92

ns

td(off)

Turn-Off Delay Time

726

ns

tf

Fall Time

649

ns

Eon

Turn-On Switching Loss

104

mJ

Eoff

Turn-Off Switching Loss

108

mJ

td(on)

Turn-On Delay Time

VCC=900V,IC=300A, RGon=3.3Ω,RGoff=4.7Ω,

VGE=±15V,Tj= 150oC

248

ns

tr

Rise Time

95

ns

td(off)

Turn-Off Delay Time

736

ns

tf

Fall Time

720

ns

Eon

Turn-On Switching Loss

115

mJ

Eoff

Turn-Off Switching Loss

116

mJ

ISC

SC Data

tP≤10μs,VGE=15V,

Tj=150oC,VCC= 1000V, VCEM≤1700V

1200

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VF

Diode Forward Voltage

IF=300A,VGE=0V,Tj=25oC

1.80

2.25

V

IF=300A,VGE=0V,Tj= 125oC

1.90

IF=300A,VGE=0V,Tj= 150oC

1.95

Qr

Recovered Charge

VR=900V,IF=300A,

-di/dt=3300A/μs,VGE=-15V Tj=25oC

82.5

μC

IRM

Peak Reverse

Recovery Current

407

A

Erec

Reverse Recovery Energy

46.6

mJ

Qr

Recovered Charge

VR=900V,IF=300A,

-di/dt=3300A/μs,VGE=-15V Tj=125oC

138

μC

IRM

Peak Reverse

Recovery Current

462

A

Erec

Reverse Recovery Energy

92.2

mJ

Qr

Recovered Charge

VR=900V,IF=300A,

-di/dt=3300A/μs,VGE=-15V Tj=150oC

154

μC

IRM

Peak Reverse

Recovery Current

460

A

Erec

Reverse Recovery Energy

109

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

R25

Rated Resistance

5.0

kΩ

ΔR/R

Deviation of R100

TC= 100 oC,R100=493.3Ω

-5

5

%

P25

Power

Dissipation

20.0

mW

B25/50

B-value

R2=R25exp[B25/50(1/T2- 1/(298.15K))]

3375

K

B25/80

B-value

R2=R25exp[B25/80(1/T2- 1/(298.15K))]

3411

K

B25/100

B-value

R2=R25exp[B25/100(1/T2- 1/(298.15K))]

3433

K

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

20

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

1.10

mΩ

RthJC

Junction-to-Case (per IGBT) Junction-to-Case (per Diode)

0.082 0.129

K/W

RthCH

Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module)

0.029 0.046 0.009

K/W

M

Terminal Connection Torque, Screw M6 Mounting Torque, Screw M5

3.0 3.0

6.0 6.0

N.m

G

Weight of Module

350

g