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IGBT Module 1200V

IGBT Module 1200V

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GD300HFX120C6SA,IGBT Module,STARPOWER

IGBT Module,1200V 300A, Package:C6.1

Brand:
STARPOWER
Spu:
GD300HFX120C6SA
  • Introduction
  • Outline
  • Equivalent Circuit Schematic
Introduction

Brief introduction

IGBT module,produced by STARPOWER. 1200V 300A.

Features

Low VCE(sat) Trench IGBT technology

10μs short circuit capability

VCE(sat) with positive temperature coefficient

Maximum junction temperature 175oC

Low inductance case

Fast & soft reverse recovery anti-parallel FWD

Isolated copper baseplate using DBC technology

Typical Applications

Inverter for motor drive

AC and DC servo drive amplifier

Uninterruptible power suppl

Absolute Maximum Ratings TF=25oC unless otherwise noted

IGBT

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1200

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current @ TC=25oC @ TC=100oC

496

300

A

ICM

Pulsed Collector Current tp=1ms

600

A

PD

Maximum Power Dissipation @ Tj=175oC

1685

W

Diode

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

1200

V

IF

Diode Continuous Forward Current

300

A

IFM

Diode Maximum Forward Current tp=1ms

600

A

Module

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

175

oC

Tjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage RMS,f=50Hz,t=1min

2500

V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter Saturation Voltage

IC=300A,VGE=15V, Tj=25oC

1.70

2.15

V

IC=300A,VGE=15V, Tj=125oC

1.95

IC=300A,VGE=15V, Tj=150oC

2.00

VGE(th)

Gate-Emitter Threshold Voltage

IC=12.0mA,VCE=VGE, Tj=25oC

5.6

6.2

6.8

V

ICES

Collector Cut-Off Current

VCE=VCES,VGE=0V, Tj=25oC

1.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25oC

400

nA

RGint

Internal Gate Resistance

2.5

Ω

Cies

Input Capacitance

VCE=25V,f=1MHz, VGE=0V

31.1

nF

Cres

Reverse Transfer Capacitance

0.87

nF

QG

Gate Charge

VGE=-15 …+15V

2.33

μC

td(on)

Turn-On Delay Time

VCC=600V,IC=300A, RG=1.5Ω,VGE=±15V, Tj=25oC

313

ns

tr

Rise Time

57

ns

td(off)

Turn-Off Delay Time

464

ns

tf

Fall Time

206

ns

Eon

Turn-On Switching Loss

9.97

mJ

Eoff

Turn-Off Switching Loss

28.6

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=300A, RG=1.5Ω,VGE=±15V, Tj=125oC

336

ns

tr

Rise Time

66

ns

td(off)

Turn-Off Delay Time

528

ns

tf

Fall Time

299

ns

Eon

Turn-On Switching Loss

21.1

mJ

Eoff

Turn-Off Switching Loss

36.6

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=300A, RG=1.5Ω,VGE=±15V, Tj=150oC

345

ns

tr

Rise Time

68

ns

td(off)

Turn-Off Delay Time

539

ns

tf

Fall Time

309

ns

Eon

Turn-On Switching Loss

25.6

mJ

Eoff

Turn-Off Switching Loss

37.8

mJ

ISC

SC Data

tP≤10μs,VGE=15V,

Tj=150oC,VCC=900V, VCEM≤1200V

1200

A

Diode Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VF

Diode Forward Voltage

IF=300A,VGE=0V,Tj=25oC

1.85

2.30

V

IF=300A,VGE=0V,Tj=125oC

1.90

IF=300A,VGE=0V,Tj=150oC

1.95

Qr

Recovered Charge

VCC=600V,IF=300A,

-di/dt=6950A/μs,VGE=-15V, Tj=25oC

10.8

μC

IRM

Peak Reverse

Recovery Current

272

A

Erec

Reverse Recovery Energy

9.53

mJ

Qr

Recovered Charge

VCC=600V,IF=300A,

-di/dt=6090A/μs,VGE=-15V, Tj=125oC

24.2

μC

IRM

Peak Reverse

Recovery Current

276

A

Erec

Reverse Recovery Energy

18.4

mJ

Qr

Recovered Charge

VCC=600V,IF=300A,

-di/dt=5440A/μs,VGE=-15V, Tj=150oC

33.6

μC

IRM

Peak Reverse

Recovery Current

278

A

Erec

Reverse Recovery Energy

20.6

mJ

NTC Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

R25

Rated Resistance

5.0

∆R/R

Deviation of R100

TC=100 oC,R100=493.3Ω

-5

5

%

P25

Power

Dissipation

20.0

mW

B25/50

B-value

R2=R25exp[B25/50(1/T2- 1/(298.15K))]

3375

K

B25/80

B-value

R2=R25exp[B25/80(1/T2- 1/(298.15K))]

3411

K

B25/100

B-value

R2=R25exp[B25/100(1/T2- 1/(298.15K))]

3433

K

Module Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

20

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

1.10

RthJC

Junction-to-Case (perIGBT) Junction-to-Case (per Diode)

0.089 0.150

K/W

RthCH

Case-to-Heatsink (perIGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module)

0.029 0.048 0.009

K/W

M

Terminal Connection Torque, Screw M6 Mounting Torque, Screw M5

3.0 3.0

6.0 6.0

N.m

G

Weight of Module

350

g

Outline

gd300hfx120c6saigbt modulestarpower-0

Equivalent Circuit Schematic

gd300hfx120c6saigbt modulestarpower-1

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