Brief introduction
Thyristor/Diode Module, MTx820 MFx820 MT800，820A,Air cooling，produced by TECHSEM .
VRRM,VDRM |
Type & Outline |
600V |
MTC820-06-416F3 |
MFC820-06-416F3 |
800V |
MTC820-08-416F3 |
MFC820-08-416F3 |
1000V |
MTC820-10-415F3 |
MFC820-10-416F3 |
1200V |
MTC820-12-416F3 |
MFC820-12-416F3 |
1400V |
MTC820-14-416F3 |
MFC820-14-416F3 |
1600V |
MTC820-16-416F3 |
MFC820-16-416F3 |
1800V |
MTC820-18-416F3 |
MFC820-18-416F3 |
1800V |
MT820-18-416F3G |
|
Features
- Isolated mounting base 3000V~
- Pressure contact technology with
- Increased power cycling capability
- Space and weight saving
Typical Applications
- AC/DC Motor drives
- Various rectifiers
- DC supply for PWM inverte
|
SYMBOL
|
CHARACTERISTIC
|
TEST CONDITIONS
|
Tj(℃) |
VALUE |
UNIT
|
Min |
Type |
Max |
IT(AV) |
Mean on-state current |
180°half sine wave 50Hz Single side cooled, Tc=85℃ |
135
|
|
|
820 |
A |
IT(RMS) |
RMS on-state current |
180。half sine wave 50Hz |
|
|
1287 |
A |
IDRM IRRM |
Repetitive peak current |
at VDRM at VRRM |
135 |
|
|
120 |
mA |
ITSM |
Surge on-state current |
10ms half sine wave, VR=0V |
135
|
|
|
20.1 |
kA |
I2t |
I2t for fusing coordination |
|
|
2020 |
A2s* 103 |
VTO |
Threshold voltage |
|
135
|
|
|
0.81 |
V |
rT |
On-state slope resistance |
|
|
0.24 |
mΩ |
VTM |
Peak on-state voltage |
ITM= 1500A |
25 |
|
|
1.38 |
V |
dv/dt |
Critical rate of rise of off-state voltage |
VDM=67%VDRM |
135 |
|
|
1000 |
V/μs |
di/dt |
Critical rate of rise of on-state current |
Gate source 1.5A
tr ≤0.5μs Repetitive
|
135 |
|
|
200 |
A/μs |
tgd |
Gate controlled delay time |
IG= 1A dig/dt=1A/μs |
25 |
|
|
4 |
μs |
tq |
Circuit commutated turn-off time |
ITM=800A, tp=2000µs, VR =50V dv/dt=20V/µs ,di/dt=-10A/µs |
135 |
|
250 |
|
µs |
IGT |
Gate trigger current |
VA= 12V, IA= 1A
|
25
|
30 |
|
250 |
mA |
VGT |
Gate trigger voltage |
0.8 |
|
3.0 |
V |
IH |
Holding current |
10 |
|
300 |
mA |
IL |
Latching current |
IA=1A IG= 1A dig/dt=1A/μs tg=30us |
25 |
|
|
1500 |
mA |
VGD |
Non-trigger gate voltage |
VDM=67%VDRM |
135 |
|
|
0.25 |
V |
IGD |
Non-trigger gate current |
VDM=67%VDRM |
135 |
|
|
5 |
mA |
Rth(j-c) |
Thermal resistance Junction to case |
Single side cooled per chip |
|
|
|
0.047 |
℃/W |
Rth(c-h) |
Thermal resistance case to heatsink |
Single side cooled per chip |
|
|
|
0.015 |
℃/W |
Viso |
Isolation voltage |
50Hz,R.M.S,t= 1min,Iiso:1mA(MAX) |
|
3000 |
|
|
V |
|
Fm
|
Terminal connection torque(M10) |
|
|
10.0 |
|
12.0 |
N·m |
Mounting torque(M6) |
|
|
4.5 |
|
6.0 |
N·m |
Tvj |
Junction temperature |
|
|
-40 |
|
135 |
℃ |
Tstg |
Stored temperature |
|
|
-40 |
|
125 |
℃ |
Wt |
Weight |
|
|
|
1410 |
|
g |
Outline |
416F3 |
EN
