MK(H)x200 MK200,Fast Turn-off Thyristor Modules,Air Cooling

VRRM,VDRM

Type & Outline

600V

MKx200-06-413F3D

MHx200-06-413F3D

800V

MKx200-08-413F3D

MHx200-08-413F3D

1000V

MKx200-10-413F3D

MHx200-10-413F3D

1200V

MKx200-12-413F3D

MHx200-12-413F3D

1400V

MKx200-14-413F3D

MHx200-14-413F3D

1600V

MKx200-16-413F3D

MHx200-16-413F3D

1800V

MKx200-18-413F3D

MHx200-18-413F3D

1800V

MK200-18-413F3DG

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

I_T(AV)

Mean on-state current

180°half sine wave 50Hz Single side cooled, Tc=85℃

125

200

A

I_T(RMS)

RMS on-state current

314

A

I_DRM I_RRM

Repetitive peak current

at VDRM at VRRM

125

50

mA

ITSM

Surge on-state current

10ms half sine wave VR=60%VRRM

125

4.8

kA

I2t

I2t for fusing coordination

115

10³A²s

V_TO

Threshold voltage

125

1.65

V

r_T

On-state slope resistance

0.60

m

V_TM

Peak on-state voltage

ITM=600A

25

2.65

V

dv/dt

Critical rate of rise of off-state voltage

VDM=67%VDRM

125

800

V/μs

di/dt

Critical rate of rise of on-state current

Gate source 1.5A

tr ≤0.5μs Repetitive

125

200

A/μs

tq

Circuit commutated turn-off time

ITM=200A, tp=4000µs,VR= 100V dv/dt=30V/µs, di/dt=-20A/µs

125

20

40

µs

25

6

16

µs

I_GT

Gate trigger current

VA= 12V, IA= 1A

25

30

180

mA

VGT

Gate trigger voltage

0.8

2.5

V

IH

Holding current

20

200

mA

IL

Latching current

1000

mA

V_GD

Non-trigger gate voltage

VDM=67%VDRM

125

0.2

V

Rth(j-c)

Thermal resistance Junction to case

Single side cooled per chip

0.100

℃/W

Rth(c-h)

Thermal resistance case to heatsink

Single side cooled per chip

0.040

℃/W

Viso

Isolation voltage

50Hz,R.M.S,t= 1min,Iiso:1mA(MAX)

2500

V

Fm

Terminal connection torque(M8)

10.0

12.0

N·m

Mounting torque(M6)

4.5

6.0

N·m

Tvj

Junction temperature

-40

125

℃

Tstg

Stored temperature

-40

125

℃

Wt

Weight

770

g

Outline

413F3D