|
SYMBOL
|
CHARACTERISTIC
|
TEST CONDITIONS
|
Tj(℃) |
VALUE |
UNIT
|
Min |
Type |
Max |
IT(AV) |
Mean on-state current |
180。half sine wave 50Hz Double side cooled, |
TC=55℃ |
125 |
|
|
1200 |
A |
TC=70℃ |
125 |
|
|
1000 |
A |
VDRM |
Repetitive peak off-state voltage |
tp=10ms |
125 |
2000 |
|
3000 |
V |
VRRM |
Repetitive peak reverse voltage |
1000 |
|
2500 |
IDRM/IRRM |
Repetitive peak current |
at VDRM/VRRM |
125 |
|
|
80 |
mA |
ITSM |
Surge on-state current |
10ms half sine wave VR=0.6VRRM |
125
|
|
|
16 |
kA |
I2t |
I2t for fusing coordination |
|
|
1280 |
103A2s |
VTO |
Threshold voltage |
|
125 |
|
|
1.55 |
V |
rT |
On-state slope resistance |
|
|
0.40 |
mΩ |
|
VTM
|
Peak on-state voltage
|
ITM=3000A, F=24kN
|
20≤tq≤35 |
25
|
|
|
2.80 |
V |
36≤tq≤60 |
|
|
2.60 |
V |
61≤tq≤75 |
|
|
2.40 |
V |
dv/dt |
Critical rate of rise of off-state voltage |
VDM=0.67VDRM |
125 |
|
|
1000 |
V/μs |
di/dt |
Critical rate of rise of on-state current (Non-repetitive) |
VDM= 67%VDRM to 1600A,
Gate pulse tr ≤0.5μs IGM=1.5A
|
125 |
|
|
1500 |
A/μs |
Qrr |
Recovery charge |
ITM=1000A ,tp=4000µs, di/dt=-20A/µs, VR=100V |
125 |
|
750 |
|
µC |
tq |
Circuit commutated turn-off time |
ITM=1000A ,tp=4000µs, VR=100V dv/dt=30V/µs ,di/dt=-20A/µs |
100 |
20 |
|
75 |
µs |
IGT |
Gate trigger current |
VA=12V, IA=1A
|
25
|
40 |
|
300 |
mA |
VGT |
Gate trigger voltage |
0.9 |
|
3.0 |
V |
IH |
Holding current |
20 |
|
500 |
mA |
IL |
Latching current |
|
|
500 |
mA |
VGD |
Non-trigger gate voltage |
VDM=67%VDRM |
125 |
|
|
0.3 |
V |
Rth(j-c) |
Thermal resistance Junction to case |
double side cooled Clamping force 24kN |
|
|
|
0.020 |
℃ /W
|
Rth(c-h) |
Thermal resistance case to heat sink |
|
|
|
0.005 |
Fm |
Mounting force |
|
|
19 |
|
26 |
kN |
Tvj |
Junction temperature |
|
|
-40 |
|
125 |
℃ |
Tstg |
Stored temperature |
|
|
-40 |
|
140 |
℃ |
Wt |
Weight |
|
|
|
440 |
|
g |
Outline |
KT50cT |
EN
