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IT(AV) | 175A |
VDRM,VRRM | 5600V 6000V 6500V |
Features:
Typical Applications
SYMBOL |
CHARACTERISTIC |
TEST CONDITIONS |
Tj(℃) | VALUE |
UNIT | |||
Min | Type | Max | ||||||
IT(AV) | Mean on-state current | 180°half sine wave 50Hz Double side cooled |
TC=70。C |
125 |
|
| 175 | A |
IT(RMS)F | RMS current(sine wave) | Sine wave 50Hz Double side cooled |
|
| 385 | A | ||
VDRM | Repetitive peak reverse voltage | tp=10ms | 125 | 5600 |
| 6500 | V | |
IDRM | Repetitive peak current | at VDRM | 125 |
|
| 100 | mA | |
ITSM | Surge on-state current | 10ms half sine wave VR=0.6VRRM |
125 |
|
| 1.7 | kA | |
I2t | I2t for fusing coordination |
|
| 14.5 | 103A2s | |||
VTO | Threshold voltage |
|
125 |
|
| 1.10 | V | |
rT | On-state slope resistance |
|
| 2.30 | mΩ | |||
VTM | Peak on-state voltage | ITM=500A, F= 15kN | 25 |
|
| 3.50 | V | |
dv/dt | Critical rate of rise of off-state voltage | VDM=0.67VDRM | 125 |
|
| 200 | V/μs | |
di/dt | Critical rate of rise of on-state current | VDM= 67%VDRM to 1000A, Gate pulse tr ≤0.5μs IGM= 1.5A Repetitive | 125 |
|
| 100 | A/μs | |
IGT | Gate trigger current |
VA= 12V, IA= 1A |
25 | 20 |
| 200 | mA | |
VGT | Gate trigger voltage | 0.8 |
| 2.5 | V | |||
IH | Holding current | 20 |
| 150 | mA | |||
IL | Latching current |
|
|
|
| 500 | mA | |
VGD | Non-trigger gate voltage | VDM=67%VDRM | 125 |
|
| 0.3 | V | |
Rth(j-c) | Thermal resistance Junction to case | Double side cooled Clamping force 15kN |
|
|
| 0.045 |
°C /W | |
Rth(c-h) | Thermal resistance case to heat sink |
|
|
| 0.008 | |||
Fm | Mounting force |
|
| 10 |
| 20 | kN | |
Tvj | Junction temperature |
|
| -40 |
| 125 | 。C | |
Tstg | Stored temperature |
|
| -40 |
| 140 | 。C | |
Wt | Weight |
|
|
| 300 |
| g | |
Outline | KS33dT |
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