|
SYMBOL
|
CHARACTERISTIC
|
TEST CONDITIONS
|
Tj(℃) |
VALUE |
UNIT
|
Min |
Type |
Max |
IT(AV) |
Mean on-state current |
180°half sine wave 50Hz Double side cooled |
TC=55℃ |
125 |
|
|
2500 |
A |
VDRM |
Repetitive peak off-state voltage |
tp=10ms |
125
|
800 |
|
2000 |
V |
VRRM |
Repetitive peak reverse voltage |
1000 |
|
1800 |
V |
IDRM IRRM |
Repetitive peak current |
at VDRM at VRRM |
125 |
|
|
200 |
mA |
ITSM |
Surge on-state current |
10ms half sine wave VR=0.6VRRM |
125
|
|
|
29 |
kA |
I2t |
I2t for fusing coordination |
|
|
4205 |
103A2s |
VTO |
Threshold voltage |
|
125
|
|
|
1.10 |
V |
rT |
On-state slope resistance |
|
|
0.13 |
mΩ |
|
VTM
|
Peak on-state voltage
|
ITM=4000A, F=32kN
|
15≤tq≤28 |
25
|
|
|
2.20 |
V |
29≤tq≤50 |
|
|
2.00 |
V |
51≤tq≤75 |
|
|
1.80 |
V |
dv/dt |
Critical rate of rise of off-state voltage |
VDM=0.67VDRM |
125 |
|
|
1000 |
V/μs |
di/dt |
Critical rate of rise of on-state current (Non-repetitive) |
VDM= 67%VDRM,
Gate pulse tr ≤0.5μs IGM= 1.5A
|
125 |
|
|
1500 |
A/μs |
Qrr |
Recovery charge |
ITM=2000A, tp=4000μs, di/dt=-20A/μs, VR= 100V |
125 |
|
750 |
|
μC |
tq |
Circuit commutated turn-off time |
ITM=2000A ,tp=4000μs, VR= 100V dv/dt=30V/μs ,di/dt=-20A/μs |
125 |
15 |
|
75 |
μs |
IGT |
Gate trigger current |
VA= 12V, IA= 1A
|
25
|
40 |
|
250 |
mA |
VGT |
Gate trigger voltage |
0.9 |
|
2.5 |
V |
IH |
Holding current |
20 |
|
1000 |
mA |
IL |
Latching current |
|
|
1000 |
mA |
VGD |
Non-trigger gate voltage |
VDM=67%VDRM |
125 |
|
|
0.3 |
V |
Rth(j-c) |
Thermal resistance Junction to case |
At 180°sine, double side cooled Clamping force 32kN |
|
|
|
0.012 |
。C /W
|
Rth(c-h) |
Thermal resistance case to heatsink |
|
|
|
0.003 |
Fm |
Mounting force |
|
|
30 |
|
40 |
kN |
Tvj |
Junction temperature |
|
|
-40 |
|
125 |
℃ |
Tstg |
Stored temperature |
|
|
-40 |
|
130 |
℃ |
Wt |
Weight |
|
|
|
880 |
|
g |
Outline |
KT60cT |
EN
