|
SYMBOL
|
CHARACTERISTIC
|
TEST CONDITIONS
|
Tj(℃) |
VALUE |
UNIT
|
Min |
Type |
Max |
|
IT(RMS)
|
RMS current |
50Hz sine wave
Double side cooled,
|
TC=55°C |
125 |
|
|
1060 |
A
|
TC=85。C |
125 |
|
|
750 |
VDRM |
Repetitive peak reverse voltage |
VDRM tp=10ms
VDSM = VDRM +100V
|
125 |
500 |
|
1800 |
V |
IDRM |
Repetitive peak current |
at VDRM |
125 |
|
|
40 |
mA |
ITSM |
Surge on-state current |
10ms half sine wave VR=0.6VRRM |
125 |
|
|
7.6 |
kA |
I2t |
I2t for fusing coordination |
|
|
288 |
A2s*103 |
VTO |
Threshold voltage |
|
125 |
|
|
0.84 |
V |
rT |
On-state slope resistance |
|
|
1.01 |
mΩ |
VTM |
Peak on-state voltage |
ITM=900A, F=15kN |
25 |
|
|
2.70 |
V |
dv/dt |
Critical rate of rise of off-state voltage |
VDM=0.67VDRM |
125 |
|
|
50 |
V/µs |
di/dt |
Critical rate of rise of on-state current |
VDM= 67%VDRM to 1000A,
Gate pulse tr ≤0.5μs IGM=1.5A Repetitive
|
125 |
|
|
50 |
A/µs |
IGT |
Gate trigger current |
VA=12V, IA=1A
|
25
|
20 |
|
300 |
mA |
VGT |
Gate trigger voltage |
0.8 |
|
3.0 |
V |
IH |
Holding current |
20 |
|
300 |
mA |
IL |
Latching current |
|
|
500 |
mA |
VGD |
Non-trigger gate voltage |
VDM=67%VDRM |
125 |
|
|
0.3 |
V |
Rth(j-c) |
Thermal resistance Junction to case |
double side cooled Clamping force 15kN |
|
|
|
0.035 |
。C /W
|
Rth(c-h) |
Thermal resistance case to heat sink |
|
|
|
0.008 |
Fm |
Mounting force |
|
|
10 |
|
20 |
kN |
Tvj |
Junction temperature |
|
|
-40 |
|
125 |
。C |
Tstg |
Stored temperature |
|
|
-40 |
|
140 |
。C |
Wt |
Weight |
|
|
|
240 |
|
g |
Outline |
KT33cT |
EN
