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IT(AV) | 750 |
VDRM,VRRM | 500V 800V 1000V 1200V 1400V 1600V 1800 |
Features:
Typical Applications
SYMBOL |
CHARACTERISTIC |
TEST CONDITIONS | Tj(℃) | VALUE |
UNIT | |||
Min | Type | Max | ||||||
IT(RMS) | RMS current | 50Hz sine wave Double side cooled, | TC=55°C | 125 |
|
| 1060 |
A |
TC=85。C | 125 |
|
| 750 | ||||
VDRM | Repetitive peak reverse voltage | VDRM tp=10ms VDSM = VDRM +100V | 125 | 500 |
| 1800 | V | |
IDRM | Repetitive peak current | at VDRM | 125 |
|
| 40 | mA | |
ITSM | Surge on-state current | 10ms half sine wave VR=0.6VRRM | 125 |
|
| 7.6 | kA | |
I2t | I2t for fusing coordination |
|
| 288 | A2s*103 | |||
VTO | Threshold voltage |
| 125 |
|
| 0.84 | V | |
rT | On-state slope resistance |
|
| 1.01 | mΩ | |||
VTM | Peak on-state voltage | ITM=900A, F=15kN | 25 |
|
| 2.70 | V | |
dv/dt | Critical rate of rise of off-state voltage | VDM=0.67VDRM | 125 |
|
| 50 | V/µs | |
di/dt | Critical rate of rise of on-state current | VDM= 67%VDRM to 1000A, Gate pulse tr ≤0.5μs IGM=1.5A Repetitive | 125 |
|
| 50 | A/µs | |
IGT | Gate trigger current |
VA=12V, IA=1A |
25 | 20 |
| 300 | mA | |
VGT | Gate trigger voltage | 0.8 |
| 3.0 | V | |||
IH | Holding current | 20 |
| 300 | mA | |||
IL | Latching current |
|
| 500 | mA | |||
VGD | Non-trigger gate voltage | VDM=67%VDRM | 125 |
|
| 0.3 | V | |
Rth(j-c) | Thermal resistance Junction to case | double side cooled Clamping force 15kN |
|
|
| 0.035 |
。C /W | |
Rth(c-h) | Thermal resistance case to heat sink |
|
|
| 0.008 | |||
Fm | Mounting force |
|
| 10 |
| 20 | kN | |
Tvj | Junction temperature |
|
| -40 |
| 125 | 。C | |
Tstg | Stored temperature |
|
| -40 |
| 140 | 。C | |
Wt | Weight |
|
|
| 240 |
| g | |
Outline | KT33cT |
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