Brief introduction
IGBT module,produced by STARPOWER. 1200V 150A.
Features
Typical Applications
Absolute Maximum Ratings TF=25oC unless otherwise noted
IGBT
Symbol |
Description |
Value |
Unit |
VCES |
Collector-Emitter Voltage |
1200 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current @ TC=25oC @ TC=85oC |
241 150 |
A |
ICM |
Pulsed Collector Current tp=1ms |
300 |
A |
PD |
Maximum Power Dissipation @ Tvj=150oC |
1262 |
W |
Diode
Symbol |
Description |
Value |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
IF |
Diode Continuous Forward Current |
150 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
300 |
A |
Module
Symbol |
Description |
Value |
Unit |
Tvjmax |
Maximum Junction Temperature |
150 |
oC |
Tvjop |
Operating Junction Temperature |
-40 to +125 |
oC |
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
2500 |
V |
IGBT Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=150A,VGE=15V, Tvj=25oC |
|
2.90 |
3.35 |
V |
IC=150A,VGE=15V, Tvj=125oC |
|
3.60 |
|
|||
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=3.0mA,VCE=VGE, Tvj=25oC |
5.0 |
6.1 |
7.0 |
V |
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tvj=25oC |
|
|
5.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tvj=25oC |
|
|
400 |
nA |
RGint |
Internal Gate Resistance |
|
|
1.50 |
|
Ω |
Cies |
Input Capacitance |
VCE=30V,f=1MHz, VGE=0V |
|
19.2 |
|
nF |
Cres |
Reverse Transfer Capacitance |
|
0.60 |
|
nF |
|
QG |
Gate Charge |
VGE=-15…+15V |
|
1.83 |
|
μC |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=150A, RG=6.8Ω,Ls=48nH, VGE=±15V,Tvj=25oC |
|
74 |
|
ns |
tr |
Rise Time |
|
92 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
401 |
|
ns |
|
tf |
Fall Time |
|
31 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
19.0 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
3.09 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=150A, RG=6.8Ω, Ls=48nH, VGE=±15V,Tvj=125oC |
|
61 |
|
ns |
tr |
Rise Time |
|
95 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
444 |
|
ns |
|
tf |
Fall Time |
|
47 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
22.5 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
3.99 |
|
mJ |
|
ISC |
SC Data |
tP≤10μs,VGE=15V, Tvj=125oC,VCC=800V, VCEM≤1200V |
|
975 |
|
A |
Diode Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
VF |
Diode Forward Voltage |
IF=150A,VGE=0V,Tvj=25oC |
|
1.85 |
2.30 |
V |
IF=150A,VGE=0V,Tvj=125oC |
|
1.90 |
|
|||
Qr |
Recovered Charge |
VR=600V,IF=150A, -di/dt=1480A/μs,VGE=-15V, Ls=48nH,Tvj=25oC |
|
13.7 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
91 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
4.01 |
|
mJ |
|
Qr |
Recovered Charge |
VR=600V,IF=150A, -di/dt=1560A/μs,VGE=-15V, Ls=48nH,Tvj=125oC |
|
22.1 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
111 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
6.65 |
|
mJ |
Module Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
LCE |
Stray Inductance |
|
|
30 |
nH |
RCC’+EE’ |
Module Lead Resistance, Terminal to Chip |
|
0.35 |
|
mΩ |
RthJC |
Junction-to-Case (perIGBT) Junction-to-Case (per Diode) |
|
|
0.099 0.259 |
K/W |
|
RthCH |
Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) |
|
0.028 0.072 0.010 |
|
K/W |
M |
Terminal Connection Torque, Screw M5 Mounting Torque, Screw M6 |
2.5 3.0 |
|
5.0 5.0 |
N.m |
G |
Weight of Module |
|
300 |
|
g |
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