H50ZPU,Rectifier Diode

I_T(AV)

900A

V_RRM

8100V 8300V

8500V

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

180°half sine wave 50Hz Double side cooled

TC=85℃

150

900

A

VRRM

Repetitive peak reverse voltage

tp=10ms

150

8000

8500

V

IRRM

Repetitive peak current

at VRRM tp=10ms

150

200

mA

IFSM

Surge forward current

10ms half sine wave. VR=0.6VRRM

150

10

kA

I2t

I2t for fusing coordination

500

10³A²s

VFO

Threshold voltage

150

1.00

V

rF

Forward slope resistance

1.00

mΩ

VFM

Peak forward voltage

IFM=1500A, F=24kN

25

2.60

V

Qrr

Recovery charge

IFM=1000A, tp=4000µs, di/dt=-20A/µs, VR=100V

150

4000

µC

Rth(j-c)

Thermal resistance Junction to case

At 180°sine. double side cooled Clamping force 24kN

0.022

℃ /W

Rth(c-h)

Thermal resistance case to heatsink

0.005

Fm

Mounting force

19

26

kN

Tvj

Junction temperature

-40

150

℃

Tstg

Stored temperature

-40

160

℃

Wt

Weight

560

g

Outline

ZT50dT