Qisqacha kirish soʻzlari
Tez o'chirish tiristor modullari ,MK(H)x200 MK200,, 200A, Havo sovutish ,tECHSEM tomonidan ishlab chiqarilgan.
VRRM,VDRM |
Tur va kontur |
600V |
MKx150-06-413F3D |
MHx150-06-413F3D |
800V |
MKx150-08-413F3D |
MHx150-08-413F3D |
1000V |
MKx150-10-413F3D |
MHx150-10-413F3D |
1200V |
MKx150-12-413F3D |
MHx150-12-413F3D |
1400V |
MKx150-14-413F3D |
MHx150-14-413F3D |
1600V |
MKx150-16-413F3D |
MHx150-16-413F3D |
1800V |
MKx150-18-413F3D |
MHx150-18-413F3D |
1800V |
MK150-18-413F3DG |
|
MKx har qanday turini anglatadi MKC, MKA, MKK
MHx har qanday turini anglatadi MHC, MHA, MHK
Xususiyatlari ：
-
Izolyatsiyalangan montaj asos e 2500V~
-
Bosimli kontakt texnologiyasi bilan Kuchaytilgan quvvat aylanish imkoniyati
-
Joy va vazn sa qish
Oddiy qoʻllanmalar ：
- Inverter
- Induktiv isitish
- Chopper
|
Simvol
|
XUShMATLAR
|
Sinov sharoitlari
|
Tj( ℃ ) |
Qiymat |
Бирлик
|
Min |
TUR |
Maksimal |
IT(AV) |
O'rtacha yoqilgan holatdagi tok |
180° yarim sinus to'lqini 50 Hz Yagona tomon sovutilgan,Tc=85 ℃ |
125
|
|
|
150 |
A |
IT ((RMS) |
RMS ish holatidagi tok |
|
|
236 |
A |
Idrm Irrm |
Takroriy cho'qqi oqim |
vDRM va VRRM da |
125 |
|
|
50 |
mA |
ITSM |
To'lqin yoqilgan holatdagi tok |
10ms yarim sinus to'lqini VR=60%VRRM |
125
|
|
|
3.4 |
kA |
I2t |
Qayta birikish uchun I2t |
|
|
58 |
103A 2s |
VTO |
Chiziqli kuchlanishni |
|
125
|
|
|
1.78 |
V |
rt |
Yoqilgan holatdagi qiyshiq qarshilik |
|
|
0.70 |
m |
VTM |
Eng yuqori yoqilgan holatdagi kuchlanish |
ITM=450A |
25 |
|
|
2.65 |
V |
dv/dt |
O'chirilgan holat voltajining tanqidiy ko'tarilish tezligi |
VDM=67%VDRM |
125 |
|
|
800 |
V/μs |
di/dt |
O'rnatilgan holatdagi oqimning o'sishining kritik darajasi |
Gate manbai 1.5A
tr ≤0.5μs Takroriy
|
125 |
|
|
200 |
A/μs |
tq |
O'zaro o'zgartirilgan o'chirish vaqti |
ITM=200A, tp=4000μs, VR=100V dv/dt=30V/μs ,di/dt=-20A/μs |
125 |
20 |
|
40 |
μs |
25 |
6 |
|
16 |
μs |
IGT |
Eshikni ishga tushirish tok |
VA= 12V, IA= 1A
|
25
|
30 |
|
180 |
mA |
Vgt |
Eshikni ishga tushirish kuchlanishi |
0.8 |
|
2.5 |
V |
IH |
Ushlab turish toki |
20 |
|
200 |
mA |
IL |
Qayta ushlab turish toki |
|
|
1000 |
mA |
VGD |
Ishga tushirilmagan eshik kuchlanishi |
VDM= 67%VDRM |
125 |
|
|
0.2 |
V |
Rth(j-c) |
Termal qarshilik kesishdan qutiga |
Har bir chip uchun bir tomonlama sovutilgan |
|
|
|
0.130 |
℃ /W |
Rth(c-h) |
Qizil qarshilik quti va issiqlik chiqaruvchi o'rtasida |
Har bir chip uchun bir tomonlama sovutilgan |
|
|
|
0.030 |
℃ /W |
VISO |
Izolyatsiya kuchlanishi |
50Hz,R.M.S,t= 1min,Iiso:1mA(MAX) |
|
2500 |
|
|
V |
|
Fm
|
Terminal ulanish momenti(M8) |
|
|
10.0 |
|
12.0 |
N·m |
O'rnatish momenti (M6) |
|
|
4.5 |
|
6.0 |
N·m |
Tvj |
Junction harorati |
|
|
-40 |
|
125 |
℃ |
TSTG |
Saqlash harorati |
|
|
-40 |
|
125 |
℃ |
Wt |
Og'irlik |
|
|
|
770 |
|
g |
Koʻrinish |
413F3D |
EN
