Brief introduction
Fast Turn-off Thyristor Modules,MK(H)x200 MK200,,200A,Air Cooling,produced by TECHSEM .
VRRM,VDRM |
Type & Outline |
600V |
MKx150-06-413F3D |
MHx150-06-413F3D |
800V |
MKx150-08-413F3D |
MHx150-08-413F3D |
1000V |
MKx150-10-413F3D |
MHx150-10-413F3D |
1200V |
MKx150-12-413F3D |
MHx150-12-413F3D |
1400V |
MKx150-14-413F3D |
MHx150-14-413F3D |
1600V |
MKx150-16-413F3D |
MHx150-16-413F3D |
1800V |
MKx150-18-413F3D |
MHx150-18-413F3D |
1800V |
MK150-18-413F3DG |
|
MKx stands for any type of MKC, MKA, MKK
MHx stands for any type of MHC, MHA, MHK
Features：
-
Isolated mounting base 2500V~
-
Pressure contact technology with Increased power cycling capability
-
Space and weight saving
Typical Applications：
- Inverter
- Inductive heating
- Chopper
|
SYMBOL
|
CHARACTERISTIC
|
TEST CONDITIONS
|
Tj(℃) |
VALUE |
UNIT
|
Min |
Type |
Max |
IT(AV) |
Mean on-state current |
180°half sine wave 50Hz Single side cooled,Tc=85℃ |
125
|
|
|
150 |
A |
IT(RMS) |
RMS on-state current |
|
|
236 |
A |
IDRM IRRM |
Repetitive peak current |
at VDRM at VRRM |
125 |
|
|
50 |
mA |
ITSM |
Surge on-state current |
10ms half sine wave VR=60%VRRM |
125
|
|
|
3.4 |
kA |
I2t |
I2t for fusing coordination |
|
|
58 |
103A2s |
VTO |
Threshold voltage |
|
125
|
|
|
1.78 |
V |
rT |
On-state slope resistance |
|
|
0.70 |
m |
VTM |
Peak on-state voltage |
ITM=450A |
25 |
|
|
2.65 |
V |
dv/dt |
Critical rate of rise of off-state voltage |
VDM=67%VDRM |
125 |
|
|
800 |
V/μs |
di/dt |
Critical rate of rise of on-state current |
Gate source 1.5A
tr ≤0.5μs Repetitive
|
125 |
|
|
200 |
A/μs |
tq |
Circuit commutated turn-off time |
ITM=200A, tp=4000μs, VR=100V dv/dt=30V/μs ,di/dt=-20A/μs |
125 |
20 |
|
40 |
μs |
25 |
6 |
|
16 |
μs |
IGT |
Gate trigger current |
VA= 12V, IA= 1A
|
25
|
30 |
|
180 |
mA |
VGT |
Gate trigger voltage |
0.8 |
|
2.5 |
V |
IH |
Holding current |
20 |
|
200 |
mA |
IL |
Latching current |
|
|
1000 |
mA |
VGD |
Non-trigger gate voltage |
VDM= 67%VDRM |
125 |
|
|
0.2 |
V |
Rth(j-c) |
Thermal resistance Junction to case |
Single side cooled per chip |
|
|
|
0.130 |
℃ /W |
Rth(c-h) |
Thermal resistance case to heatsink |
Single side cooled per chip |
|
|
|
0.030 |
℃ /W |
Viso |
Isolation voltage |
50Hz,R.M.S,t= 1min,Iiso:1mA(MAX) |
|
2500 |
|
|
V |
|
Fm
|
Terminal connection torque(M8) |
|
|
10.0 |
|
12.0 |
N·m |
Mounting torque(M6) |
|
|
4.5 |
|
6.0 |
N·m |
Tvj |
Junction temperature |
|
|
-40 |
|
125 |
℃ |
Tstg |
Stored temperature |
|
|
-40 |
|
125 |
℃ |
Wt |
Weight |
|
|
|
770 |
|
g |
Outline |
413F3D |
EN
