Brief introduction
IGBT module,produced by STARPOWER. 1200V 150A.
Features
- Low VCE(sat) Trench IGBT technology
- 10μs short circuit capability
- VCE(sat) with positive temperature coefficient
-
Maximum junction temperature 175℃
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
Typical Applications
- Inverter for motor drive
- AC and DC servo drive amplifier
- Uninterruptible power supply
Absolute Maximum Ratings TF=25oC unless otherwise noted
IGBT
Symbol |
Description |
Value |
Unit |
VCES |
Collector-Emitter Voltage |
1200 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current @ TC=25oC @ TC=85oC |
238
150
|
A |
ICM |
Pulsed Collector Current tp=1ms |
300 |
A |
PD |
Maximum Power Dissipation @ Tvj=150oC |
1237 |
W |
Diode
Symbol |
Description |
Value |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
IF |
Diode Continuous Forward Current |
150 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
300 |
A |
Module
Symbol |
Description |
Value |
Unit |
Tvjmax |
Maximum Junction Temperature |
150 |
oC |
Tvjop |
Operating Junction Temperature |
-40 to +125 |
oC |
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
2500 |
V |
IGBT Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat)
|
Collector to Emitter Saturation Voltage |
IC=150A,VGE=15V, Tvj=25oC |
|
2.90 |
3.35 |
V
|
IC=150A,VGE=15V, Tvj=125oC |
|
3.60 |
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=3.0mA,VCE=VGE, Tvj=25oC |
5.0 |
6.1 |
7.0 |
V |
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tvj=25oC |
|
|
5.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tvj=25oC |
|
|
400 |
nA |
RGint |
Internal Gate Resistance |
|
|
1.50 |
|
Ω |
Cies |
Input Capacitance |
VCE=30V,f=1MHz, VGE=0V |
|
19.2 |
|
nF |
Cres |
Reverse Transfer Capacitance |
|
0.60 |
|
nF |
QG |
Gate Charge |
VGE=-15…+15V |
|
1.83 |
|
μC |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=150A, RG=6.8Ω,Ls=35nH, VGE=±15V,Tvj=25oC
|
|
183 |
|
ns |
tr |
Rise Time |
|
73.8 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
438 |
|
ns |
tf |
Fall Time |
|
33.0 |
|
ns |
Eon |
Turn-On Switching Loss |
|
12.8 |
|
mJ |
Eoff |
Turn-Off Switching Loss |
|
5.31 |
|
mJ |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=150A, RG=6.8Ω,Ls=35nH, VGE=±15V,Tvj=125oC
|
|
185 |
|
ns |
tr |
Rise Time |
|
74 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
476 |
|
ns |
tf |
Fall Time |
|
44.5 |
|
ns |
Eon |
Turn-On Switching Loss |
|
15.5 |
|
mJ |
Eoff |
Turn-Off Switching Loss |
|
7.74 |
|
mJ |
ISC |
SC Data |
tP≤10μs,VGE=15V,
Tvj=125oC,VCC=800V, VCEM≤1200V
|
|
975 |
|
A |
Diode Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
VF |
Diode Forward Voltage |
IF=150A,VGE=0V,Tvj=25oC |
|
1.85 |
2.30 |
V |
IF=150A,VGE=0V,Tvj=125oC |
|
1.90 |
|
Qr |
Recovered Charge |
VR=600V,IF=150A,
-di/dt=2232A/μs,Ls=35nH, VGE=-15V,Tvj=25oC
|
|
11.9 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
113 |
|
A |
Erec |
Reverse Recovery Energy |
|
4.02 |
|
mJ |
Qr |
Recovered Charge |
VR=600V,IF=150A,
-di/dt=2118A/μs,Ls=35nH, VGE=-15V,Tvj=125oC
|
|
22.5 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
139 |
|
A |
Erec |
Reverse Recovery Energy |
|
8.58 |
|
mJ |
Module Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
RthJC |
Junction-to-Case (perIGBT) Junction-to-Case (per Diode) |
|
|
0.101 0.257 |
K/W |
RthCH |
Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) |
|
0.028 0.071 0.010 |
|
K/W |
M |
Terminal Connection Torque, Screw M5 Mounting Torque, Screw M6 |
2.5 3.0 |
|
5.0 5.0 |
N.m |
G |
Weight of Module |
|
300 |
|
g |
EN
