Brief introduction
IGBT module,produced by STARPOWER. 1000V 750A.
Features
- Low VCE(sat) Trench IGBT technology
- Low switching losses
- 6μs short circuit capability
- VCE(sat) with positive temperature coefficient
-
Maximum junction temperature 175℃
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
-
Isolated copper pinfin baseplate using Si3N4 AMB technology
Typical Applications
- Automotive application
- Hybrid and electric vehicle
- Inverter for motor drive
Absolute Maximum Ratings TF=25oC unless otherwise noted
IGBT
Symbol |
Description |
Values |
Unit |
VCES |
Collector-Emitter Voltage |
750 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
ICN |
Implemented Collector Current |
1000 |
A |
IC |
Collector Current Tvj=175oC |
680 |
A |
ICM |
Pulsed Collector Current tp=1ms |
1360 |
A |
PD |
Maximum Power Dissipation @ TF=75oC Tvj=175oC |
1086 |
W |
Diode
Symbol |
Description |
Values |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
750 |
V |
IFN |
Implemented Collector Current |
1000 |
A |
IF |
Diode Continuous Forward Current |
680 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
1360 |
A |
Module
Symbol |
Description |
Value |
Unit |
Tvjmax |
Maximum Junction Temperature |
175 |
oC |
Tvjop |
Operating Junction Temperature continuous |
-40 to +150 |
oC |
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
2500 |
V |
IGBT Characteristics TF=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
|
VCE(sat)
|
Collector to Emitter Saturation Voltage
|
IC=680A,VGE=15V, Tvj=25oC |
|
1.25 |
1.50 |
V
|
|
IC=680A,VGE=15V, Tvj=150oC |
|
1.35 |
|
|
IC=680A,VGE=15V, Tvj=175oC |
|
1.40 |
|
|
IC=1000A,VGE=15V, Tvj=25oC |
|
1.45 |
|
|
IC=1000A,VGE=15V, Tvj=175oC |
|
1.70 |
|
|
|
VGE(th)
|
Gate-Emitter Threshold Voltage
|
IC=9.60mA,VCE=VGE, Tvj=25oC |
5.5 |
6.5 |
7.0 |
V
|
|
IC=9.60mA,VCE=VGE, Tvj=175oC |
|
3.5 |
|
|
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tvj=25oC |
|
|
1.0 |
mA |
|
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tvj=25oC |
|
|
400 |
nA |
|
RGint |
Internal Gate Resistance |
|
|
1.0 |
|
Ω |
|
Cies |
Input Capacitance |
VCE=50V,f=100kHz, VGE=0V
|
|
72.3 |
|
nF |
|
Coes |
Output Capacitance |
|
1.51 |
|
nF |
|
Cres |
Reverse Transfer Capacitance |
|
0.32 |
|
nF |
|
QG |
Gate Charge |
VCE =400V, IC=680A, VGE=-10…+15V |
|
4.10 |
|
μC |
|
td(on) |
Turn-On Delay Time |
VCC=400V,IC=680A, RG=0.22Ω,LS=16nH, VGE=-10V/+15V,
Tvj=25oC
|
|
196 |
|
ns |
|
tr |
Rise Time |
|
50 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
407 |
|
ns |
|
tf |
Fall Time |
|
125 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
11.1 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
29.1 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=400V,IC=680A, RG=0.22Ω,LS=16nH, VGE=-10V/+15V,
Tvj=150oC
|
|
222 |
|
ns |
|
tr |
Rise Time |
|
63 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
471 |
|
ns |
|
tf |
Fall Time |
|
178 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
19.7 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
37.4 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=400V,IC=680A, RG=0.22Ω,LS=16nH, VGE=-10V/+15V,
Tvj=175oC
|
|
224 |
|
ns |
|
tr |
Rise Time |
|
68 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
490 |
|
ns |
|
tf |
Fall Time |
|
194 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
21.7 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
39.5 |
|
mJ |
|
ISC |
SC Data |
tP≤6μs,VGE=15V, |
|
4000 |
|
A |
|
|
|
Tvj=25oC,VCC=450V, VCEM≤750V |
|
|
|
|
|
|
tP≤3μs,VGE=15V,
Tvj=175oC,VCC=450V, VCEM≤750V
|
|
3300 |
|
|
Diode Characteristics TF=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VF
|
Diode Forward Voltage
|
IF=680A,VGE=0V,Tvj=25oC |
|
1.60 |
2.05 |
V
|
IF=680A,VGE=0V,Tvj=150oC |
|
1.60 |
|
IF=680A,VGE=0V,Tvj=175oC |
|
1.55 |
|
IF=1000A,VGE=0V,Tvj=25oC |
|
1.80 |
|
IF=1000A,VGE=0V,Tvj=175oC |
|
1.75 |
|
Qr |
Recovered Charge |
VR=400V,IF=680A,
-di/dt=15030A/μs,VGE=-10V, LS=16nH,Tvj=25oC
|
|
19.9 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
458 |
|
A |
Erec |
Reverse Recovery Energy |
|
6.10 |
|
mJ |
Qr |
Recovered Charge |
VR=400V,IF=680A,
-di/dt=12360A/μs,VGE=-10V, LS=16nH,Tvj=150oC
|
|
29.7 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
504 |
|
A |
Erec |
Reverse Recovery Energy |
|
9.70 |
|
mJ |
Qr |
Recovered Charge |
VR=400V,IF=680A,
-di/dt=11740A/μs,VGE=-10V, LS=16nH,Tvj=175oC
|
|
34.5 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
526 |
|
A |
Erec |
Reverse Recovery Energy |
|
11.0 |
|
mJ |
PTC Characteristics TF=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
R |
Nominal Resistance |
TC=0 oC
TC=150 oC
|
|
1000
1573
|
|
Ω Ω |
TCR |
Temperature Coefficient |
|
|
0.38 |
|
%/K |
TSH |
Self Heating |
TC=0 oC
Im=0.1...0.3mA
|
|
0.4 |
|
K/mW |
Module Characteristics TF=25oC unless otherwise noted
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
LCE |
Stray Inductance |
|
5 |
|
nH |
p |
Maximum Pressure In Cooling Circuit |
|
|
2.5 |
bar |
|
RthJF
|
Junction-to-Cooling Fluid (perIGBT) Junction-to-Cooling Fluid (per Diode) △V/△t=8.0dm3/min,TF=65oC |
|
0.080 0.115 |
|
K/W |
M |
Terminal Connection Torque, Screw M5 Mounting Torque, Screw M5 |
5.4 5.4 |
|
6.6 6.6 |
N.m |
G |
Weight of Module |
|
220 |
|
g |
EN
