IGBT Module,GD1000HFA75N5HT Starpower

Symbol

Description

Values

Unit

VCES

Collector-Emitter Voltage

750

V

VGES

Gate-Emitter Voltage

±20

V

ICN

Implemented Collector Current

1000

A

IC

Collector Current Tvj=175oC

680

A

ICM

Pulsed Collector Current tp=1ms

1360

A

PD

Maximum Power Dissipation @ TF=75oC Tvj=175oC

1086

W

Symbol

Description

Values

Unit

VRRM

Repetitive Peak Reverse Voltage

750

V

IFN

Implemented Collector Current

1000

A

IF

Diode Continuous Forward Current

680

A

IFM

Diode Maximum Forward Current tp=1ms

1360

A

Symbol

Description

Value

Unit

Tvjmax

Maximum Junction Temperature

175

oC

Tvjop

Operating Junction Temperature continuous

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage RMS,f=50Hz,t=1min

2500

V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter Saturation Voltage

IC=680A,VGE=15V, Tvj=25oC

1.25

1.50

V

IC=680A,VGE=15V, Tvj=150oC

1.35

IC=680A,VGE=15V, Tvj=175oC

1.40

IC=1000A,VGE=15V, Tvj=25oC

1.45

IC=1000A,VGE=15V, Tvj=175oC

1.70

VGE(th)

Gate-Emitter Threshold Voltage

IC=9.60mA,VCE=VGE, Tvj=25oC

5.5

6.5

7.0

V

IC=9.60mA,VCE=VGE, Tvj=175oC

3.5

ICES

Collector Cut-Off Current

VCE=VCES,VGE=0V, Tvj=25oC

1.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tvj=25oC

400

nA

RGint

Internal Gate Resistance

1.0

Ω

Cies

Input Capacitance

VCE=50V,f=100kHz, VGE=0V

72.3

nF

Coes

Output Capacitance

1.51

nF

Cres

Reverse Transfer Capacitance

0.32

nF

QG

Gate Charge

VCE =400V, IC=680A, VGE=-10…+15V

4.10

μC

td(on)

Turn-On Delay Time

VCC=400V,IC=680A, RG=0.22Ω,LS=16nH, VGE=-10V/+15V,

Tvj=25oC

196

ns

tr

Rise Time

50

ns

td(off)

Turn-Off Delay Time

407

ns

tf

Fall Time

125

ns

Eon

Turn-On Switching Loss

11.1

mJ

Eoff

Turn-Off Switching Loss

29.1

mJ

td(on)

Turn-On Delay Time

VCC=400V,IC=680A, RG=0.22Ω,LS=16nH, VGE=-10V/+15V,

Tvj=150oC

222

ns

tr

Rise Time

63

ns

td(off)

Turn-Off Delay Time

471

ns

tf

Fall Time

178

ns

Eon

Turn-On Switching Loss

19.7

mJ

Eoff

Turn-Off Switching Loss

37.4

mJ

td(on)

Turn-On Delay Time

VCC=400V,IC=680A, RG=0.22Ω,LS=16nH, VGE=-10V/+15V,

Tvj=175oC

224

ns

tr

Rise Time

68

ns

td(off)

Turn-Off Delay Time

490

ns

tf

Fall Time

194

ns

Eon

Turn-On Switching Loss

21.7

mJ

Eoff

Turn-Off Switching Loss

39.5

mJ

ISC

SC Data

tP≤6μs,VGE=15V,

4000

A

Tvj=25oC,VCC=450V, VCEM≤750V

tP≤3μs,VGE=15V,

Tvj=175oC,VCC=450V, VCEM≤750V

3300

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward Voltage

IF=680A,VGE=0V,Tvj=25oC

1.60

2.05

V

IF=680A,VGE=0V,Tvj=150oC

1.60

IF=680A,VGE=0V,Tvj=175oC

1.55

IF=1000A,VGE=0V,Tvj=25oC

1.80

IF=1000A,VGE=0V,Tvj=175oC

1.75

Qr

Recovered Charge

VR=400V,IF=680A,

-di/dt=15030A/μs,VGE=-10V, LS=16nH,Tvj=25oC

19.9

μC

IRM

Peak Reverse

Recovery Current

458

A

Erec

Reverse Recovery Energy

6.10

mJ

Qr

Recovered Charge

VR=400V,IF=680A,

-di/dt=12360A/μs,VGE=-10V, LS=16nH,Tvj=150oC

29.7

μC

IRM

Peak Reverse

Recovery Current

504

A

Erec

Reverse Recovery Energy

9.70

mJ

Qr

Recovered Charge

VR=400V,IF=680A,

-di/dt=11740A/μs,VGE=-10V, LS=16nH,Tvj=175oC

34.5

μC

IRM

Peak Reverse

Recovery Current

526

A

Erec

Reverse Recovery Energy

11.0

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

R

Nominal Resistance

TC=0 oC

TC=150 oC

1000

1573

Ω Ω

TCR

Temperature Coefficient

0.38

%/K

TSH

Self Heating

TC=0 oC

Im=0.1...0.3mA

0.4

K/mW

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

5

nH

p

Maximum Pressure In Cooling Circuit

2.5

bar

RthJF

Junction-to-Cooling Fluid (perIGBT) Junction-to-Cooling Fluid (per Diode) △V/△t=8.0dm3/min,TF=65oC

0.080 0.115

K/W

M

Terminal Connection Torque, Screw M5 Mounting Torque, Screw M5

5.4 5.4

6.6 6.6

N.m

G

Weight of Module

220

g