IGBT Module,YMIF900-45,Single Switch IGBT,CRRC

Parameter/参数

Symbol/符号

Conditions/条件

min

max

Unit

Collector-emitter voltage 集电极-发射极电压

VCES

VGE =0V,Tvj ≥25°C

4500

V

DC collector current 集电极电流

IC

TC =80°C

900

A

Peak collector current 集电极峰值电流

ICM

tp=1ms,Tc=80°C

1800

A

Gate-emitter voltage 栅极发射极电压

VGES

-20

20

V

Total power dissipation 总功率损耗

Ptot

TC =25°C,perswitch(IGBT)

8100

W

DC forward current 直流正向电流

IF

900

A

Peak forward current 峰值正向电流

IFRM

tp=1ms

1800

A

Surge current 浪涌电流

IFSM

VR =0V,Tvj =125°C,tp=10ms, half-sine wave

6700

A

IGBT short circuit SOA IGBT 短路安全工作区

tpsc

VCC =3400V,VCEMCHIP≤4500V VGE ≤15V,Tvj≤125°C

10

μs

Isolation voltage 绝缘电压

Visol

1min,f=50Hz

10200

V

Junction temperature 结温

Tvj

150

℃

Junction operating temperature 工作结温

Tvj(op)

-50

125

℃

Case temperature 壳温

TC

-50

125

℃

Storage temperature 储存温度

Tstg

-50

125

℃

Mounting torques 安装力矩

MS

4

6

Nm

MT1

8

10

MT2

2

3

Parameter/参数

Symbol/符号

Conditions/条件

Min

type

max

Unit

Collector (- emitter) breakdown voltage

集电极-发射极阻断电压

V(BR)CES

VGE =0V,IC=10mA, Tvj=25°C

4500

V

Collector-emitter saturation voltage

集电极-发射极饱和电压

VCEsat

IC =900A, VGE =15V

Tvj= 25°C

2.7

3.2

V

Tvj=125°C

3.4

3.8

V

Collector cut off current 集电极截止电流

ICES

VCE =4500V, VGE =0V

Tvj= 25°C

10

mA

Tvj=125°C

100

mA

Gate leakage current 栅极漏电流

IGES

VCE =0V,VGE =20V, Tvj =125°C

-500

500

nA

Gate-emitter threshold voltage 栅极发射极阀值电压

VGE(TH)

IC =240mA,VCE =VGE, Tvj =25°C

4.5

6.5

V

Gate charge 栅极电荷

Qg

IC =900A,VCE =2800V, VGE =-15V … 15V

8.1

µC

Input capacitance 输入电容

Cies

VCE =25V,VGE =0V, f=1MHz,Tvj =25°C

105.6

nF

Output capacitance 输出电容

Coes

7.35

Reverse transfer capacitance 反向转移电容

Cres

2.04

Turn-on delay time 开通延迟时间

td(on)

VCC =2800V,

IC =900A,

RG =2.2Ω ,

VGE =±15V,

Lσ=280nH,

感性负载

Tvj = 25 °C

680

ns

Tvj = 125 °C

700

Rise time 上升时间

tr

Tvj = 25 °C

230

Tvj = 125 °C

240

Turn-off delay time 关断延迟时间

td(off)

Tvj = 25 °C

2100

ns

Tvj = 125 °C

2300

Fall time 下降时间

tf

Tvj = 25 °C

1600

Tvj = 125 °C

2800

Turn-on switching loss energy 开通损耗能量

Eon

Tvj = 25 °C

1900

mJ

Tvj =125 °C

2500

Turn-off switching loss energy 关断损耗能量

Eoff

Tvj = 25 °C

3100

mJ

Tvj =125 °C

3800

Short circuit current 短路电流

ISC

tpsc ≤ 10μs, VGE =15V, Tvj = 125°C,VCC = 3400V

3600

A