|
SYMBOL
|
CHARACTERISTIC
|
TEST CONDITIONS
|
Tj(℃) |
VALUE |
UNIT
|
Min |
Type |
Max |
|
IT(AV)
|
Mean on-state current |
180。half sine wave 50Hz Double side cooled |
TC=70。C
|
115
|
|
|
2000
|
A
|
IDRM IRRM |
Repetitive peak current |
at VDRM tp= 10ms at VRRM tp= 10ms |
115 |
|
|
600 |
mA |
ITSM |
Surge on-state current |
10ms half sine wave VR=0.6VRRM |
115
|
|
|
35 |
kA |
I2t |
I2t for fusing coordination |
|
|
6125 |
103A2s |
VTO |
Threshold voltage |
|
115
|
|
|
1.32 |
V |
rT |
On-state slope resistance |
|
|
0.52 |
mΩ |
VTM |
Peak on-state voltage |
ITM= 1500A, F=90kN |
25 |
|
|
2.00 |
V |
dv/dt |
Critical rate of rise of off-state voltage |
VDM=0.67VDRM |
115 |
|
|
2000 |
V/μs |
di/dt |
Critical rate of rise of on-state current |
VDM=67%VDRM,
Gate pulse tr ≤0.5μs IGM= 1.5A
|
115 |
|
|
200 |
A/μs |
Qrr |
Recovery charge |
ITM=2000A, tp=4000μs, di/dt=-5A/μs, VR=50V |
115 |
|
5000 |
|
μC |
IGT |
Gate trigger current |
VA= 12V, IA= 1A
|
25
|
40 |
|
300 |
mA |
VGT |
Gate trigger voltage |
0.8 |
|
3.0 |
V |
IH |
Holding current |
25 |
|
200 |
mA |
VGD |
Non-trigger gate voltage |
VDM=67%VDRM |
115 |
|
|
0.3 |
V |
Rth(j-c) |
Thermal resistance Junction to case |
Double side cooled Clamping force 90kN |
|
|
|
0.0057 |
。C /W
|
Rth(c-h) |
Thermal resistance case to heatsink |
|
|
|
0.0015 |
Fm |
Mounting force |
|
|
81 |
90 |
108 |
kN |
Tvj |
Junction temperature |
|
|
-40 |
|
115 |
℃ |
Tstg |
Stored temperature |
|
|
-40 |
|
140 |
℃ |
Wt |
Weight |
|
|
|
2500 |
|
g |
Outline |
KT100dT |
EN
