Brief introduction
IGBT module, produced by STARPOWER. 1200V 900A.
Features
Typical Applications
Absolute Maximum Ratings TC=25oC unless otherwise noted
IGBT
Symbol | Description | Value | Unit |
VCES | Collector-Emitter Voltage | 1200 | V |
VGES | Gate-Emitter Voltage | ±20 | V |
IC | Collector Current @ TC=25oC @ TC=80oC | 1350 900 | A |
ICM | Pulsed Collector Current tp=1ms | 1800 | A |
PD | Maximum Power Dissipation @ Tj=150oC | 7.40 | kW |
Diode
Symbol | Description | Value | Unit |
VRRM | Repetitive Peak Reverse Voltage | 1200 | V |
IF | Diode Continuous Forward Current | 900 | A |
IFM | Diode Maximum Forward Current tp=1ms | 1800 | A |
Module
Symbol | Description | Value | Unit |
Tjmax | Maximum Junction Temperature | 150 | oC |
Tjop | Operating Junction Temperature | -40 to +125 | oC |
TSTG | Storage Temperature Range | -40 to +125 | oC |
VISO | Isolation Voltage RMS,f=50Hz,t=1min | 4000 | V |
IGBT Characteristics TC=25oC unless otherwise noted
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
VCE(sat) | Collector to Emitter Saturation Voltage | IC=800A,VGE=15V, Tj=25oC |
| 2.90 | 3.35 |
V |
IC=800A,VGE=15V, Tj=125oC |
| 3.60 |
| |||
VGE(th) | Gate-Emitter Threshold Voltage | IC= 16.0mA,VCE=VGE, Tj=25oC | 5.0 | 6.1 | 7.0 | V |
ICES | Collector Cut-Off Current | VCE=VCES,VGE=0V, Tj=25oC |
|
| 5.0 | mA |
IGES | Gate-Emitter Leakage Current | VGE=VGES,VCE=0V, Tj=25oC |
|
| 400 | nA |
Cies | Input Capacitance | VCE=25V,f=1MHz, VGE=0V |
| 53.1 |
| nF |
Cres | Reverse Transfer Capacitance |
| 3.40 |
| nF | |
QG | Gate Charge | VGE=- 15…+15V |
| 8.56 |
| μC |
td(on) | Turn-On Delay Time |
VCC=900V,IC=800A, RG= 1.3Ω, VGE=±15V, Tj=25oC |
| 90 |
| ns |
tr | Rise Time |
| 81 |
| ns | |
td(off) | Turn-Off Delay Time |
| 500 |
| ns | |
tf | Fall Time |
| 55 |
| ns | |
Eon | Turn-On Switching Loss |
| 36.8 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 41.3 |
| mJ | |
td(on) | Turn-On Delay Time |
VCC=900V,IC=800A, RG= 1.3Ω, VGE=±15V, Tj= 125oC |
| 115 |
| ns |
tr | Rise Time |
| 92 |
| ns | |
td(off) | Turn-Off Delay Time |
| 550 |
| ns | |
tf | Fall Time |
| 66 |
| ns | |
Eon | Turn-On Switching Loss |
| 52.5 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 59.4 |
| mJ | |
ISC |
SC Data | tP≤10μs,VGE=15V, Tj=125oC,VCC=900V, VCEM≤1200V |
|
5200 |
|
A |
Diode Characteristics TC=25oC unless otherwise noted
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
VF | Diode Forward Voltage | IF=800A,VGE=0V,Tj=25oC |
| 1.95 | 2.40 | V |
IF=800A,VGE=0V,Tj= 125oC |
| 1.95 |
| |||
Qr | Recovered Charge | VCC=900V,IF=800A, -di/dt=9500A/μs,VGE=±15V, Tj=25oC |
| 56 |
| μC |
IRM | Peak Reverse Recovery Current |
| 550 |
| A | |
Erec | Reverse Recovery Energy |
| 38.7 |
| mJ | |
Qr | Recovered Charge | VCC=900V,IF=800A, -di/dt=9500A/μs,VGE=±15V, Tj= 125oC |
| 148 |
| μC |
IRM | Peak Reverse Recovery Current |
| 920 |
| A | |
Erec | Reverse Recovery Energy |
| 91.8 |
| mJ |
Module Characteristics TC=25oC unless otherwise noted
Symbol | Parameter | Min. | Typ. | Max. | Unit |
LCE | Stray Inductance |
| 12 |
| nH |
RCC’+EE’ | Module Lead Resistance, Terminal to Chip |
| 0.19 |
| mΩ |
RθJC | Junction-to-Case (per IGBT) Junction-to-Case (per Diode) |
|
| 16.9 26.2 | K/kW |
RθCS | Case-to-Sink (per IGBT) Case-to-Sink (per Diode) |
| 19.7 30.6 |
| K/kW |
RθCS | Case-to-Sink |
| 6.0 |
| K/kW |
M | Terminal Connection Torque, Screw M4 Terminal Connection Torque, Screw M8 Mounting Torque, Screw M6 | 1.8 8.0 4.25 |
| 2.1 10 5.75 |
N.m |
G | Weight of Module |
| 1500 |
| g |
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