Brief introduction
IGBT module, produced by STARPOWER. 1200V 900A.
Features
- NPT IGBT technology
-
10μs short circuit capability
-
Low switching losses
-
Rugged with ultrafast performance
-
VCE(sat) with positive temperature coefficient
-
Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
Typical Applications
- Switching mode power supply
- Inductive heating
- Electronic welder
Absolute Maximum Ratings TC=25oC unless otherwise noted
IGBT
Symbol |
Description |
Value |
Unit |
VCES |
Collector-Emitter Voltage |
1200 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current @ TC=25oC
@ TC=80oC
|
1350
900
|
A |
ICM |
Pulsed Collector Current tp=1ms |
1800 |
A |
PD |
Maximum Power Dissipation @ Tj=150oC |
7.40 |
kW |
Diode
Symbol |
Description |
Value |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
IF |
Diode Continuous Forward Current |
900 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
1800 |
A |
Module
Symbol |
Description |
Value |
Unit |
Tjmax |
Maximum Junction Temperature |
150 |
oC |
Tjop |
Operating Junction Temperature |
-40 to +125 |
oC |
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
IGBT Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat)
|
Collector to Emitter
Saturation Voltage
|
IC=800A,VGE=15V, Tj=25oC |
|
2.90 |
3.35 |
V
|
IC=800A,VGE=15V, Tj=125oC |
|
3.60 |
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC= 16.0mA,VCE=VGE, Tj=25oC |
5.0 |
6.1 |
7.0 |
V |
ICES |
Collector Cut-Off
Current
|
VCE=VCES,VGE=0V,
Tj=25oC
|
|
|
5.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25oC |
|
|
400 |
nA |
Cies |
Input Capacitance |
VCE=25V,f=1MHz,
VGE=0V
|
|
53.1 |
|
nF |
Cres |
Reverse Transfer
Capacitance
|
|
3.40 |
|
nF |
QG |
Gate Charge |
VGE=- 15…+15V |
|
8.56 |
|
μC |
td(on) |
Turn-On Delay Time |
VCC=900V,IC=800A, RG= 1.3Ω,
VGE=±15V, Tj=25oC
|
|
90 |
|
ns |
tr |
Rise Time |
|
81 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
500 |
|
ns |
tf |
Fall Time |
|
55 |
|
ns |
Eon |
Turn-On Switching
Loss
|
|
36.8 |
|
mJ |
Eoff |
Turn-Off Switching
Loss
|
|
41.3 |
|
mJ |
td(on) |
Turn-On Delay Time |
VCC=900V,IC=800A, RG= 1.3Ω,
VGE=±15V, Tj= 125oC
|
|
115 |
|
ns |
tr |
Rise Time |
|
92 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
550 |
|
ns |
tf |
Fall Time |
|
66 |
|
ns |
Eon |
Turn-On Switching
Loss
|
|
52.5 |
|
mJ |
Eoff |
Turn-Off Switching
Loss
|
|
59.4 |
|
mJ |
|
ISC
|
SC Data
|
tP≤10μs,VGE=15V,
Tj=125oC,VCC=900V, VCEM≤1200V
|
|
5200
|
|
A
|
Diode Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
VF |
Diode Forward
Voltage
|
IF=800A,VGE=0V,Tj=25oC |
|
1.95 |
2.40 |
V |
IF=800A,VGE=0V,Tj= 125oC |
|
1.95 |
|
Qr |
Recovered Charge |
VCC=900V,IF=800A,
-di/dt=9500A/μs,VGE=±15V, Tj=25oC
|
|
56 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
550 |
|
A |
Erec |
Reverse Recovery Energy |
|
38.7 |
|
mJ |
Qr |
Recovered Charge |
VCC=900V,IF=800A,
-di/dt=9500A/μs,VGE=±15V, Tj= 125oC
|
|
148 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
920 |
|
A |
Erec |
Reverse Recovery Energy |
|
91.8 |
|
mJ |
Module Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
LCE |
Stray Inductance |
|
12 |
|
nH |
RCC’+EE’ |
Module Lead Resistance, Terminal to Chip |
|
0.19 |
|
mΩ |
RθJC |
Junction-to-Case (per IGBT)
Junction-to-Case (per Diode)
|
|
|
16.9
26.2
|
K/kW |
RθCS |
Case-to-Sink (per IGBT)
Case-to-Sink (per Diode)
|
|
19.7
30.6
|
|
K/kW |
RθCS |
Case-to-Sink |
|
6.0 |
|
K/kW |
|
M
|
Terminal Connection Torque, Screw M4 Terminal Connection Torque, Screw M8 Mounting Torque, Screw M6 |
1.8
8.0
4.25
|
|
2.1
10
5.75
|
N.m
|
G |
Weight of Module |
|
1500 |
|
g |
EN
