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IGBT Module 1200V

IGBT Module 1200V

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GD900SGU120C3SN,IGBT Module,STARPOWER

1200V 900A

Brand:
STARPOWER
Spu:
GD900SGU120C3SN
  • Introduction
  • Outline
Introduction

Brief introduction

IGBT module, produced by STARPOWER. 1200V 900A.

Features

  • NPT IGBT technology
  • 10μs short circuit capability
  • Low switching losses
  • Rugged with ultrafast performance
  • VCE(sat) with positive temperature coefficient
  • Fast & soft reverse recovery anti-parallel FWD
  • Isolated copper baseplate using DBC technology

Typical Applications

  • Switching mode power supply
  • Inductive heating
  • Electronic welder

Absolute Maximum Ratings TC=25oC unless otherwise noted

IGBT

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1200

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current @ TC=25oC

@ TC=80oC

1350

900

A

ICM

Pulsed Collector Current tp=1ms

1800

A

PD

Maximum Power Dissipation @ Tj=150oC

7.40

kW

Diode

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

1200

V

IF

Diode Continuous Forward Current

900

A

IFM

Diode Maximum Forward Current tp=1ms

1800

A

Module

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

150

oC

Tjop

Operating Junction Temperature

-40 to +125

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage RMS,f=50Hz,t=1min

4000

V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter

Saturation Voltage

IC=800A,VGE=15V, Tj=25oC

2.90

3.35

V

IC=800A,VGE=15V, Tj=125oC

3.60

VGE(th)

Gate-Emitter Threshold Voltage

IC= 16.0mA,VCE=VGE, Tj=25oC

5.0

6.1

7.0

V

ICES

Collector Cut-Off

Current

VCE=VCES,VGE=0V,

Tj=25oC

5.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25oC

400

nA

Cies

Input Capacitance

VCE=25V,f=1MHz,

VGE=0V

53.1

nF

Cres

Reverse Transfer

Capacitance

3.40

nF

QG

Gate Charge

VGE=- 15…+15V

8.56

μC

td(on)

Turn-On Delay Time

VCC=900V,IC=800A, RG= 1.3Ω,

VGE=±15V, Tj=25oC

90

ns

tr

Rise Time

81

ns

td(off)

Turn-Off Delay Time

500

ns

tf

Fall Time

55

ns

Eon

Turn-On Switching

Loss

36.8

mJ

Eoff

Turn-Off Switching

Loss

41.3

mJ

td(on)

Turn-On Delay Time

VCC=900V,IC=800A, RG= 1.3Ω,

VGE=±15V, Tj= 125oC

115

ns

tr

Rise Time

92

ns

td(off)

Turn-Off Delay Time

550

ns

tf

Fall Time

66

ns

Eon

Turn-On Switching

Loss

52.5

mJ

Eoff

Turn-Off Switching

Loss

59.4

mJ

ISC

SC Data

tP≤10μs,VGE=15V,

Tj=125oC,VCC=900V, VCEM≤1200V

5200

A

Diode Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward

Voltage

IF=800A,VGE=0V,Tj=25oC

1.95

2.40

V

IF=800A,VGE=0V,Tj= 125oC

1.95

Qr

Recovered Charge

VCC=900V,IF=800A,

-di/dt=9500A/μs,VGE=±15V, Tj=25oC

56

μC

IRM

Peak Reverse

Recovery Current

550

A

Erec

Reverse Recovery Energy

38.7

mJ

Qr

Recovered Charge

VCC=900V,IF=800A,

-di/dt=9500A/μs,VGE=±15V, Tj= 125oC

148

μC

IRM

Peak Reverse

Recovery Current

920

A

Erec

Reverse Recovery Energy

91.8

mJ

Module Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

12

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

0.19

RθJC

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

16.9

26.2

K/kW

RθCS

Case-to-Sink (per IGBT)

Case-to-Sink (per Diode)

19.7

30.6

K/kW

RθCS

Case-to-Sink

6.0

K/kW

M

Terminal Connection Torque, Screw M4 Terminal Connection Torque, Screw M8 Mounting Torque, Screw M6

1.8

8.0

4.25

2.1

10

5.75

N.m

G

Weight of Module

1500

g

Outline

igbt modulegd900sgu120c3snstarpower-0

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