Brief introduction
IGBT module, produced by STARPOWER. 1200V 900A.
Features
-
Low VCE(sat) Trench IGBT technology
-
10μs short circuit capability
-
VCE(sat) with positive temperature coefficient
-
Maximum junction temperature 175oC
-
Low inductance case
- Isolated copper baseplate using DBC technology
-
High power and thermal cycling capability
Typical Applications
- High Power Converter
- Solar Power
- Hybrid and Electric Vehicle
Absolute Maximum Ratings TC=25oC unless otherwise noted
IGBT
Symbol |
Description |
Values |
Unit |
VCES |
Collector-Emitter Voltage |
1200 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current @ TC=25oC
@ TC= 100oC
|
1522
900
|
A |
ICM |
Pulsed Collector Current tp=1ms |
1800 |
A |
PD |
Maximum Power Dissipation @ Tj=175oC |
5.24 |
kW |
Diode
Symbol |
Description |
Values |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
IF |
Diode Continuous Forward Current |
900 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
1800 |
A |
Module
Symbol |
Description |
Value |
Unit |
Tjmax |
Maximum Junction Temperature |
175 |
oC |
Tjop |
Operating Junction Temperature |
-40 to +150 |
oC |
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
IGBT Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat)
|
Collector to Emitter
Saturation Voltage
|
IC=900A,VGE=15V, Tj=25oC |
|
1.70 |
2.15 |
V
|
IC=900A,VGE=15V, Tj=125oC |
|
1.95 |
|
IC=900A,VGE=15V, Tj=150oC |
|
2.00 |
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=22.5mA,VCE=VGE, Tj=25oC |
5.2 |
6.0 |
6.8 |
V |
ICES |
Collector Cut-Off
Current
|
VCE=VCES,VGE=0V,
Tj=25oC
|
|
|
1.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25oC |
|
|
400 |
nA |
RGint |
Internal Gate Resistance |
|
|
0.63 |
|
Ω |
Cies |
Input Capacitance |
VCE=25V,f=1MHz,
VGE=0V
|
|
93.2 |
|
nF |
Cres |
Reverse Transfer
Capacitance
|
|
2.61 |
|
nF |
QG |
Gate Charge |
VGE=-15 ﹍+15V |
|
6.99 |
|
μC |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=900A, RG=1.6Ω,
VGE=±15V, Tj=25oC
|
|
214 |
|
ns |
tr |
Rise Time |
|
150 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
721 |
|
ns |
tf |
Fall Time |
|
206 |
|
ns |
Eon |
Turn-On Switching
Loss
|
|
76 |
|
mJ |
Eoff |
Turn-Off Switching
Loss
|
|
128 |
|
mJ |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=900A, RG=1.6Ω,
VGE=±15V, Tj=125oC
|
|
235 |
|
ns |
tr |
Rise Time |
|
161 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
824 |
|
ns |
tf |
Fall Time |
|
412 |
|
ns |
Eon |
Turn-On Switching
Loss
|
|
107 |
|
mJ |
Eoff |
Turn-Off Switching
Loss
|
|
165 |
|
mJ |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=900A, RG=1.6Ω,
VGE=±15V, Tj=150oC
|
|
235 |
|
ns |
tr |
Rise Time |
|
161 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
876 |
|
ns |
tf |
Fall Time |
|
464 |
|
ns |
Eon |
Turn-On Switching
Loss
|
|
112 |
|
mJ |
Eoff |
Turn-Off Switching
Loss
|
|
180 |
|
mJ |
|
ISC
|
SC Data
|
tP≤10μs,VGE=15V,
Tj=150oC,VCC=900V, VCEM≤1200V
|
|
3600
|
|
A
|
Diode Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VF
|
Diode Forward
Voltage
|
IF=900A,VGE=0V,Tj=25oC |
|
1.90 |
2.25 |
V
|
IF=900A,VGE=0V,Tj= 125oC |
|
1.85 |
|
IF=900A,VGE=0V,Tj= 150oC |
|
1.80 |
|
Qr |
Recovered Charge |
VR=600V,IF=900A,
-di/dt=4800A/μs,VGE=-15V Tj=25oC
|
|
86 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
475 |
|
A |
Erec |
Reverse Recovery Energy |
|
36.1 |
|
mJ |
Qr |
Recovered Charge |
VR=600V,IF=900A,
-di/dt=4800A/μs,VGE=-15V Tj= 125oC
|
|
143 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
618 |
|
A |
Erec |
Reverse Recovery Energy |
|
71.3 |
|
mJ |
Qr |
Recovered Charge |
VR=600V,IF=900A,
-di/dt=4800A/μs,VGE=-15V Tj= 150oC
|
|
185 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
665 |
|
A |
Erec |
Reverse Recovery Energy |
|
75.1 |
|
mJ |
NTC Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
R25 |
Rated Resistance |
|
|
5.0 |
|
kΩ |
ΔR/R |
Deviation of R100 |
TC= 100 oC,R100=493.3Ω |
-5 |
|
5 |
% |
P25 |
Power
Dissipation
|
|
|
|
20.0 |
mW |
B25/50 |
B-value |
R2=R25exp[B25/50(1/T2-
1/(298.15K))]
|
|
3375 |
|
K |
B25/80 |
B-value |
R2=R25exp[B25/80(1/T2-
1/(298.15K))]
|
|
3411 |
|
K |
B25/100 |
B-value |
R2=R25exp[B25/100(1/T2-
1/(298.15K))]
|
|
3433 |
|
K |
Module Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
LCE |
Stray Inductance |
|
18 |
|
nH |
RCC’+EE’ |
Module Lead Resistance, Terminal to Chip |
|
0.30 |
|
mΩ |
RthJC |
Junction-to-Case (per IGBT)
Junction-to-Case (per Diode)
|
|
|
28.6
51.9
|
K/kW |
|
RthCH
|
Case-to-Heatsink (per IGBT)
Case-to-Heatsink (per Diode)
Case-to-Heatsink (per Module)
|
|
14.0
25.3
4.5
|
|
K/kW |
|
M
|
Terminal Connection Torque, Screw M4 Terminal Connection Torque, Screw M8 Mounting Torque, Screw M5 |
1.8
8.0
3.0
|
|
2.1
10
6.0
|
N.m
|
G |
Weight of Module |
|
825 |
|
g |
EN
