Brief introduction
IGBT module, produced by STARPOWER. 1200V 200A.
Features
Typical Applications
Absolute Maximum Ratings TC=25℃ unless otherwise noted
Symbol | Description | GD200SGU120C2S | Units |
VCES | Collector-Emitter Voltage | 1200 | V |
VGES | Gate-Emitter Voltage | ±20 | V |
IC | Collector Current @ TC=25℃ @ TC=80℃ | 320 200 | A |
ICM | Pulsed Collector Current tp=1ms | 400 | A |
IF | Diode Continuous Forward Current @ TC=80℃ | 200 | A |
IFM | Diode Maximum Forward Current tp=1ms | 400 | A |
PD | Maximum Power Dissipation @ Tj=150℃ | 1645 | W |
Tjmax | Maximum Junction Temperature | 150 | ℃ |
TSTG | Storage Temperature Range | -40 to +125 | ℃ |
VISO | Isolation Voltage RMS,f=50Hz,t=1min | 4000 | V |
Mounting Torque | Signal Terminal Screw:M4 | 1.1 to 2.0 |
|
Power Terminal Screw:M6 | 2.5 to 5.0 | N.m | |
Mounting Screw:M6 | 3.0 to 5.0 |
|
Electrical Characteristics of IGBT TC=25℃ unless otherwise noted
Off Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
V(BR)CES | Collector-Emitter Breakdown Voltage | Tj=25℃ | 1200 |
|
| V |
ICES | Collector Cut-Off Current | VCE=VCES,VGE=0V, Tj=25℃ |
|
| 5.0 | mA |
IGES | Gate-Emitter Leakage Current | VGE=VGES,VCE=0V, Tj=25℃ |
|
| 400 | nA |
On Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
VGE(th) | Gate-Emitter Threshold Voltage | IC=2.0mA,VCE=VGE, Tj=25℃ | 4.4 | 4.9 | 6.0 | V |
VCE(sat) |
Collector to Emitter Saturation Voltage | IC=200A,VGE=15V, Tj=25℃ |
| 3.10 | 3.55 |
V |
IC=200A,VGE=15V, Tj=125℃ |
| 3.45 |
|
Switching Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
td(on) | Turn-On Delay Time |
VCC=600V,IC=200A, RG=4.7Ω,VGE=±15V, Tj=25℃ |
| 577 |
| ns |
tr | Rise Time |
| 120 |
| ns | |
td(off) | Turn-Off Delay Time |
| 540 |
| ns | |
tf | Fall Time |
| 123 |
| ns | |
Eon | Turn-On Switching Loss |
| 16.3 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 12.0 |
| mJ | |
td(on) | Turn-On Delay Time |
VCC=600V,IC=200A, RG=4.7Ω,VGE=±15V, Tj=125℃ |
| 609 |
| ns |
tr | Rise Time |
| 121 |
| ns | |
td(off) | Turn-Off Delay Time |
| 574 |
| ns | |
tf | Fall Time |
| 132 |
| ns | |
Eon | Turn-On Switching Loss |
| 22.0 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 16.2 |
| mJ | |
Cies | Input Capacitance |
VCE=30V,f=1MHz, VGE=0V |
| 16.9 |
| nF |
Coes | Output Capacitance |
| 1.51 |
| nF | |
Cres | Reverse Transfer Capacitance |
| 0.61 |
| nF | |
ISC |
SC Data | tP≤10μs,VGE=15 V, Tj=125℃,VCC=900V, VCEM≤1200V |
|
1800 |
|
A |
LCE | Stray Inductance |
|
|
| 20 | nH |
RCC’+EE’ | Module Lead Resistance, Terminal To Chip |
|
|
0.18 |
|
mΩ |
Electrical Characteristics of DIODE TC=25℃ unless otherwise noted
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units | |
VF | Diode Forward Voltage | IF=200A | Tj=25℃ |
| 1.82 | 2.25 | V |
Tj=125℃ |
| 1.92 |
| ||||
Qr | Recovered Charge | IF=200A, VR=600V, RG=4.7Ω, VGE=-15V | Tj=25℃ |
| 13.1 |
| μC |
Tj=125℃ |
| 26.1 |
| ||||
IRM | Peak Reverse Recovery Current | Tj=25℃ |
| 123 |
| A | |
Tj=125℃ |
| 172 |
| ||||
Erec | Reverse Recovery Energy | Tj=25℃ |
| 7.0 |
| mJ | |
Tj=125℃ |
| 12.9 |
| ||||
Thermal Characteristics
Symbol | Parameter | Typ. | Max. | Units |
RθJC | Junction-to-Case (per IGBT) |
| 0.076 | K/W |
RθJC | Junction-to-Case (per DIODE) |
| 0.128 | K/W |
RθCS | Case-to-Sink (Conductive grease applied) | 0.035 |
| K/W |
Weight | Weight Module | 300 |
| g |
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