Asymmetric IGCT Device,YT-ASC40L6500IC

Symbol

Parameter

Conditions

Min

Typical

Max

V _DRM

Rep. peak off-state voltage

T _VJ=125℃, I _D≤I DRM, t _p=10ms

-

-

4500

V

I _DRM

Rep. peak off-state current

T _VJ=125℃, V _D=V DRM, t _p=10ms

-

-

50

mA

d_v /d_t

Critical rate of rise of anode voltage

T _VJ=125℃, V _D=0.67V_DRM

-

-

1000

V/μs

V _DClinK

Intermediate DC voltage

Permanent DC voltage for 100 FIT failure rate of GCT

-

-

4000

V

V _RRM

Reverse voltage

\

-

-

17

V

Symbol

Parameter

Conditions

Min

Typical

Max

I _DC

Max. RMS on-state current

T _C = 85℃, DC, Double side cooled

-

-

2000

A

I _TSM

I ² _t

Max. peak non-repetitive surge on- state current

Limiting load integral

T _VJ = 125℃, since half wave, 10ms,

V _D=V _R=0

-

-

-

-

26

338

KA

10⁴A² s

V _TM

On-state voltage

T _VJ = 125℃, I _T =4000A

-

3.75

4.11

V

V _TO

r _T

Threshold voltage

slope resistance

T _VJ = 125℃, I _T = 1000…4000A

-

-

1.88

0.55

V

mΩ

Symbol

Parameter name

Test conditions

Min

Typical

Max

di_T/dt

Critical rate of rise of on-state current

TVJ = 125℃, IT =4000A, VD = 2800V, f=0..500Hz

-

-

5000

A/μs

t _don

Turn-on delay time

T_VJ = 125℃, I_T = 5000A, V_D = 4000V,

di /dt = V _D/L_i , C_CL =20μF, L_i = 3μH, L_CL = 0.3μH

-

-

3

μs

t _donSF

Turn-on delay time status feedback

-

-

7

μs

t _r

Rise time (Fall time of anode voltage)

-

-

1

μs

E_on

Turn-on energy per pulse

-

-

3.3

J

Symbol

Parameter

Conditions

Min

Typical

Max

I_TGQM

Max.controllable turn-off current

T _VJ = 125℃, V _DM ≤ V _DRM, V D =4000V, L _CL = 0.3μH,

C _CL = 20μF, R _S = 0.4Ω，f=0..300Hz

D_FWD = D_CL= FY_B 1100-60

-

-

4000

A

t_doff

Turn-off delay time

T _VJ = 125℃, I _TGQ = 4000A, V _D =4000V,

V _DM ≤ V _DRM, C _CL = 20μF, R _S = 0.4Ω,

L _i =3μH, L _CL = 0.3μH

D_FWD = D_CL= FYB 1100-60

-

-

8

μs

t_doffSF

Turn-off delay time status feedback

-

-

7

μs

t_f

Fall time

-

-

1

μs

E_off

Turn-off energy per pulse

-

442.5

46.3

J

Symbol

Parameter name

Test conditions

Min

Typical

Max

T_VJ

T_STG

Junction operating temperature

Storage temperature range

/

0

-40

-

125

60

℃

℃

R_thJC

R_thCH

Thermal resistance, junction-to-case

Thermal resistance, case-to-heatsink

Double side cooled

-

-

-

-

8.5

3

K/kW

K/kW

Symbol

Parameter name

Test conditions

Min

Typical

Max

V _{GIN RMS}

Gate unit voltage

DC voltage or AC square wave amplitude (15kHz - 100kHz). No galvanic isolation to power circuit.

28

-

40

V

P _{GIN MAX}

Max. Gate unit power consumption

/

-

-

130

W

I _{GIN MIN}

Min. Current needed to power up and

Gate Unit

Min. Current needed to power up and gate unit

2

-

-

A

I _{GIN MAX}

Internal current limitation

Rectified average current limited by the

gate unit

-

-

8

A

t _on(min)

t _off(min)

Min. on- time

Min. off -time

/

40

40

-

-

-

-

μs

μs

P _{on CS}

P _{Off CS}

P _{on SF}

P _{off SF}

CS Optical input power

CS Optical noise power

SF Optical output power

SF Optical noise power

Valid for 1mm plastic optical fiber(POF)

-15

-

-19

-

-

-

-

-

-1

-45

-1

-50

dBm

dBm

dBm

dBm

t _GLITCH

t _retrig

Pulse width threshold

External retrigger pulse width

Max. pulse width without response

/

-

700

-

-

400

1100

ns

ns

CS

Receiver for command signal

Agilent，Type:HFBR-2521

SF

Transmitter for status feedback

Agilent，Type:HFBR-1521

LED1(Green)

Power Supply OK

Light on when power supply is within specified range

LED2(Green)

Gate off

Light on when GCT is off

LED3(Yellow)

Gate on

Light on when gate-current is flowing

LED4(Red)

Fault

Light on when gate drive capacitor is under voltage, or gate drive voltage is inconsistance with CS, or GCT is short circuited

LED5(Yellow)

TBD

TBD

LED6(Red)

TBD

TBD