Reverse Blocking IGCT Modules
Reverse Blocking Integrated Gate-Commutated Thyristor (RB-IGCT) modules are advanced high-power semiconductor devices designed for next-generation high-voltage power conversion systems. With integrated reverse voltage blocking capability, RB-IGCT modules provide excellent electrical performance, high reliability, and superior efficiency for demanding energy conversion applications.
Based on proven IGCT technology and advanced press-pack packaging, RB-IGCT modules combine the advantages of thyristor devices, including ultra-low conduction losses and high current capability, with fast and efficient gate-controlled turn-off performance. The robust press-pack structure enables excellent thermal performance, mechanical strength, and reliable operation under severe electrical and thermal stresses.
The integrated reverse blocking capability allows RB-IGCT modules to simplify system design by reducing the need for additional reverse voltage protection components, improving power density and overall system reliability.
Key Advantages
Integrated reverse voltage blocking capability for simplified system design;
High voltage and high current capability for large-scale power conversion applications;
Ultra-low conduction losses for enhanced energy efficiency;
Fast turn-off capability with excellent switching performance;
Advanced press-pack package design with double-sided cooling capability;
High reliability under electrical, thermal, and mechanical stress conditions.
Applications
High-voltage direct current transmission (HVDC);
Flexible AC Transmission Systems (FACTS);
Medium-voltage and high-voltage converters;
Railway traction power systems;
Large-scale industrial power supplies;
Renewable energy and grid-connected power conversion systems;
Energy storage and high-power conversion applications.
YT-RBC5580Y11
Key Parameters
VDRM |
8000 |
V |
VRRM |
8000 |
V |
ITGQM |
6600 |
A |
IT(AV) |
3290 |
A |
ITSM |
40 |
kA |
VTO |
1.25 |
V |
rT |
0.26 |
mΩ |
RthJC |
3.6 |
K/kW |
Applications
● DC circuit |
● breaker Hybrid commutated converter |
Features
● High withstand current |
● Low conduction loss |
● Both forward/reverse blocking |
● Self energy acquisition |
Blocking Data
Symbol |
Parameter |
Conditions |
Min. |
Typ. |
Max. |
Unit |
VDRM |
Repetitive peak off-state voltage |
Gate unit powered on,TVJ=90℃,I D≤I DRM,tp= 10ms |
- |
- |
8000 |
V |
I DRM |
Repetitive peak off-state current |
Gate unit powered on,TVJ=90℃,VD≤V DRM,tp= 10ms |
- |
- |
300 |
mA |
VRRM |
Repetitive peak reverse off-state voltage |
Gate unit powered on,TVJ=90℃,I R≤I RRM,tp= 10ms |
- |
- |
8000 |
V |
IRRM |
Repetitive peak reverse off-state current |
Gate unit powered on,TVJ=90℃,VR≤VRRM,tp= 10ms |
- |
- |
300 |
mA |
VGRM |
Repetitive peak reverse gate voltage |
/ |
- |
- |
24 |
V |
ID(DC) |
DC off-state current |
Gate unit powered on,TVJ=90℃,VD(DC)=6450V |
- |
- |
40 |
mA |
IR(DC) |
DC reverse current |
Gate unit powered on,TVJ=90℃,VR(DC)=6450V |
- |
- |
40 |
mA |
V RAL |
Reverse long avalanche voltage |
Gate unit powered on, TVJ=90℃ ,tp=250μs/2500μs |
- |
- |
8500 |
V |
I RAL |
Reverse long avalanche current |
Gate unit powered on, TVJ=90℃ ,tp=250μs/2500μs |
- |
- |
30 |
A |
VRAS |
Reverse short avalanche voltage |
Gate unit powered on, TVJ=90℃ ,tp= 1.5μs/50μs |
- |
- |
8900 |
V |
IRAS |
Reverse short avalanche current |
Gate unit powered on, TVJ=90℃ ,tp= 1.5μs/50μs |
- |
- |
50 |
A |
dv/dt |
Critical rate of rise of off-state voltage |
Gate unit powered on,TVJ=90℃,V DM=6400V |
- |
- |
4000 |
V/ μs |
EN
