Brief introduction
IGBT module,High current igbt module, single switch IGBT modules produced by CRRC. 1700V 3600A.
Features
●SPT+chip-set for low switching losses
●Low VCEsat
●Low drivering power
●AlSiC base plate for high power cycling capability
●AlN substrate for low thermal resistance
Typical application
●Traction drives
●DC chopper
●Medium voltage inverters/converters
Maximum rated values
Parameter |
Symbol |
Conditions |
min |
max |
Unit |
Collector-emitter voltage |
VCES |
VGE =0V,Tvj ≥25°C |
|
1700 |
V |
DC collector current |
IC |
TC =80°C |
|
3600 |
A |
Peak collector current |
ICM |
tp=1ms,Tc=80°C |
|
7200 |
A |
Gate-emitter voltage |
VGES |
|
-20 |
20 |
V |
Total power dissipation |
Ptot |
TC =25°C,perswitch(IGBT) |
|
17800 |
W |
DC forward current |
IF |
|
|
3600 |
A |
Peak forward current |
IFRM |
tp=1ms |
|
7200 |
A |
Surge current |
IFSM |
VR =0V,Tvj =125°C,tp=10ms, half-sine wave |
|
18000 |
A |
IGBT short circuit SOA IGBT |
tpsc
|
VCC =1200V,VCEMCHIP≤1700V VGE ≤15V,Tvj≤125°C
|
|
10
|
μs
|
Isolation voltage |
Visol |
1min,f=50Hz |
|
4000 |
V |
Junction temperature |
Tvj |
|
|
175 |
℃ |
Junction operating temperature |
Tvj(op) |
|
-50 |
150 |
℃ |
Case temperature |
TC |
|
-50 |
125 |
℃ |
Storage temperature |
Tstg |
|
-50 |
125 |
℃ |
Mounting torques |
MS |
|
4 |
6 |
Nm
|
MT1 |
|
8 |
10 |
MT2 |
|
2 |
3 |
IGBT characteristic values
Parameter |
Symbol |
Conditions |
Min |
type |
max |
Unit |
Collector (- emitter) breakdown voltage |
V(BR)CES |
VGE =0V,IC=10mA, Tvj=25°C |
1700 |
|
|
V |
Collector-emitter saturation voltage |
VCEsat
|
IC =3600A, VGE =15V |
Tvj= 25°C |
|
2.5 |
|
V |
Tvj=125°C |
|
3.0 |
|
V |
Tvj=150°C |
|
3.1 |
|
V |
Collector cut off current |
ICES
|
VCE =1700V, VGE =0V |
Tvj= 25°C |
|
|
10 |
mA |
Tvj=125°C |
|
|
100 |
mA |
Tvj=150°C |
|
170 |
|
mA |
Gate leakage current |
IGES |
VCE =0V,VGE =20V, Tvj =125°C |
-500 |
|
500 |
nA |
Gate-emitter threshold voltage |
VGE(TH) |
IC =240mA,VCE =VGE, Tvj =25°C |
5.3 |
|
7.3 |
V |
Gate charge |
Qg |
IC =2400A,VCE =900V, VGE =-15V … 15V |
|
21.0 |
|
µC |
Input capacitance |
Cies |
VCE =25V,VGE =0V, f=1MHz,Tvj =25°C
|
|
239 |
|
nF
|
Output capacitance |
Coes |
|
20.9 |
|
Reverse transfer capacitance |
Cres |
|
9.24 |
|
Turn-on delay time |
td(on)
|
VCC =900V, IC =3600A, RG =2.2Ω , VGE =±15V, Lσ=280nH,
|
Tvj = 25 °C |
|
1200 |
|
ns
|
Tvj = 125 °C |
|
1500 |
|
Tvj = 150 °C |
|
1600 |
|
Rise time |
tr
|
Tvj = 25 °C |
|
1400 |
|
Tvj = 125 °C |
|
1600 |
|
Tvj = 150 °C |
|
1700 |
|
Turn-off delay time |
td(off)
|
Tvj = 25 °C |
|
3000 |
|
ns
|
Tvj = 125 °C |
|
3500 |
|
Tvj = 150 °C |
|
3700 |
|
Fall time |
tf
|
Tvj = 25 °C |
|
500 |
|
Tvj = 125 °C |
|
560 |
|
Tvj = 150 °C |
|
620 |
|
Turn-on switching loss energy |
Eon
|
Tvj = 25 °C |
|
2700 |
|
mJ
|
Tvj = 125 °C |
|
2900 |
|
Tvj = 150 °C |
|
3200 |
|
Turn-off switching loss energy |
Eoff
|
Tvj = 25 °C |
|
3800 |
|
mJ
|
Tvj = 125 °C |
|
4100 |
|
Tvj = 150 °C |
|
4400 |
|
Short circuit current |
ISC |
tpsc ≤ 10μs, VGE =15V, Tvj = 125°C,VCC = 1200V |
|
10000 |
|
A |
EN
