YMIF3600-17,IGBT module,High current igbt module, single switch IGBT,CRRC

Parameter

Symbol

Conditions

min

max

Unit

Collector-emitter voltage

VCES

VGE =0V,Tvj ≥25°C

1700

V

DC collector current

IC

TC =80°C

3600

A

Peak collector current

ICM

tp=1ms,Tc=80°C

7200

A

Gate-emitter voltage

VGES

-20

20

V

Total power dissipation

Ptot

TC =25°C,perswitch(IGBT)

17800

W

DC forward current

IF

3600

A

Peak forward current

IFRM

tp=1ms

7200

A

Surge current

IFSM

VR =0V,Tvj =125°C,tp=10ms, half-sine wave

18000

A

IGBT short circuit SOA IGBT

tpsc

VCC =1200V,VCEMCHIP≤1700V VGE ≤15V,Tvj≤125°C

10

μs

Isolation voltage

Visol

1min,f=50Hz

4000

V

Junction temperature

Tvj

175

℃

Junction operating temperature

Tvj(op)

-50

150

℃

Case temperature

TC

-50

125

℃

Storage temperature

Tstg

-50

125

℃

Mounting torques

MS

4

6

Nm

MT1

8

10

MT2

2

3

Parameter

Symbol

Conditions

Min

type

max

Unit

Collector (- emitter) breakdown voltage

V(BR)CES

VGE =0V,IC=10mA, Tvj=25°C

1700

V

Collector-emitter saturation voltage

VCEsat

IC =3600A, VGE =15V

Tvj= 25°C

2.5

V

Tvj=125°C

3.0

V

Tvj=150°C

3.1

V

Collector cut off current

ICES

VCE =1700V, VGE =0V

Tvj= 25°C

10

mA

Tvj=125°C

100

mA

Tvj=150°C

170

mA

Gate leakage current

IGES

VCE =0V,VGE =20V, Tvj =125°C

-500

500

nA

Gate-emitter threshold voltage

VGE(TH)

IC =240mA,VCE =VGE, Tvj =25°C

5.3

7.3

V

Gate charge

Qg

IC =2400A,VCE =900V, VGE =-15V … 15V

21.0

µC

Input capacitance

Cies

VCE =25V,VGE =0V, f=1MHz,Tvj =25°C

239

nF

Output capacitance

Coes

20.9

Reverse transfer capacitance

Cres

9.24

Turn-on delay time

td(on)

VCC =900V, IC =3600A, RG =2.2Ω , VGE =±15V, Lσ=280nH,

Tvj = 25 °C

1200

ns

Tvj = 125 °C

1500

Tvj = 150 °C

1600

Rise time

tr

Tvj = 25 °C

1400

Tvj = 125 °C

1600

Tvj = 150 °C

1700

Turn-off delay time

td(off)

Tvj = 25 °C

3000

ns

Tvj = 125 °C

3500

Tvj = 150 °C

3700

Fall time

tf

Tvj = 25 °C

500

Tvj = 125 °C

560

Tvj = 150 °C

620

Turn-on switching loss energy

Eon

Tvj = 25 °C

2700

mJ

Tvj = 125 °C

2900

Tvj = 150 °C

3200

Turn-off switching loss energy

Eoff

Tvj = 25 °C

3800

mJ

Tvj = 125 °C

4100

Tvj = 150 °C

4400

Short circuit current

ISC

tpsc ≤ 10μs, VGE =15V, Tvj = 125°C,VCC = 1200V

10000

A