Brief introduction
Thyristor/Diode Module, MTx1200,MFx1200，1200A,Air cooling,produced by TECHSEM .
VRRM,VDRM |
Type & Outline |
600V |
MTx1200-06-412F3 |
MFx1200-06-412F3 |
800V |
MTx1200-08-412F3 |
MFx1200-08-412F3 |
1000V |
MTx1200-10-412F3 |
MFx1200-10-412F3 |
1200V |
MTx1200-12-412F3 |
MFx1200-12-412F3 |
1400V |
MTx1200-14-412F3 |
MFx1200-14-412F3 |
1600V |
MTx1200-16-412F3 |
MFx1200-16-412F3 |
1800V |
MTx1200-18-412F3 |
MFx1200-18-412F3 |
1800V |
MT1200-18-412F3G |
|
MTx stands for any type of MTC, MTA, MTK
MFx stands for any type of MFC, MFA, MFK
Features
- Isolated mounting base 3000V~
- Pressure contact technology with
- Increased power cycling capability
- Space and weight saving
Typical Applications
- AC/DC Motor drives
- Various rectifiers
- DC supply for PWM inverte
|
SYMBOL
|
CHARACTERISTIC
|
TEST CONDITIONS
|
Tj(℃) |
VALUE |
UNIT
|
Min |
Type |
Max |
IT(AV) |
Mean on-state current |
180°half sine wave 50Hz
Single side cooled, TC=60℃
|
125
|
|
|
1200 |
A |
IT(RMS) |
RMS on-state current |
|
|
1884 |
A |
IDRM IRRM |
Repetitive peak current |
at VDRM at VRRM |
125 |
|
|
55 |
mA |
ITSM |
Surge on-state current |
VR=60%VRRM,,t=10ms half sine, |
125 |
|
|
26 |
kA |
I2t |
I2t for fusing coordination |
125 |
|
|
3380 |
103A2s |
VTO |
Threshold voltage |
|
125
|
|
|
0.70 |
V |
rT |
On-state slope resistance |
|
|
0.14 |
mΩ |
VTM |
Peak on-state voltage |
ITM=3000A |
25 |
|
|
1.96 |
V |
dv/dt |
Critical rate of rise of off-state voltage |
VDM=67%VDRM |
125 |
|
|
1000 |
V/μs |
di/dt |
Critical rate of rise of on-state current |
Gate source 1.5A
tr ≤0.5μs Repetitive
|
125 |
|
|
200 |
A/μs |
IGT |
Gate trigger current |
VA=12V, IA=1A
|
25
|
30 |
|
200 |
mA |
VGT |
Gate trigger voltage |
0.8 |
|
3.0 |
V |
IH |
Holding current |
10 |
|
200 |
mA |
IL |
Latching current |
|
|
1500 |
mA |
VGD |
Non-trigger gate voltage |
VDM=67%VDRM |
125 |
|
|
0.20 |
V |
Rth(j-c) |
Thermal resistance Junction to case |
At 180° sine. Single side cooled per chip |
|
|
|
0.048 |
℃/W |
Rth(c-h) |
Thermal resistance case to heatsink |
At 180° sine. Single side cooled per chip |
|
|
|
0.020 |
℃/W |
Viso |
Isolation voltage |
50Hz,R.M.S,t=1min,Iiso:1mA(MAX) |
|
3000 |
|
|
V |
|
Fm
|
Terminal connection torque(M12) |
|
|
12.0 |
|
16.0 |
N·m |
Mounting torque(M8) |
|
|
10.0 |
|
12.0 |
N·m |
Tvj |
Junction temperature |
|
|
-40 |
|
125 |
℃ |
Tstg |
Stored temperature |
|
|
-40 |
|
125 |
℃ |
Wt |
Weight |
|
|
|
3660 |
|
g |
Outline |
412F3 |
EN
