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IT(AV)  | 
3415A  | 
VDRM  | 
800V~2000V  | 
VRRM  | 
1000V~1800V  | 
tq  | 
15~75µs  | 
Features
Typical Applications
| 
 
 SYMBOL  | 
 
 CHARACTERISTIC  | 
 
 TEST CONDITIONS  | 
Tj(℃)  | 
VALUE  | 
 
 UNIT  | 
||||
Min  | 
Type  | 
Max  | 
|||||||
| 
 
 IT(AV)  | 
 
 Mean on-state current  | 
180。half sine wave 50Hz Double side cooled,  | 
TC=55°C  | 
 
 125  | 
  | 
  | 
3415  | 
 
 A  | 
|
TC=70°C  | 
  | 
  | 
2870  | 
||||||
VDRM  | 
Repetitive peak off-state voltag  | 
 
 tp=10ms  | 
 
 125  | 
800  | 
  | 
2000  | 
 
 V  | 
||
VRRM  | 
Repetitive peak reverse voltage  | 
1000  | 
  | 
1800  | 
|||||
IDRM IRRM  | 
Repetitive peak current  | 
VD= VDRM VR= VRRM  | 
125  | 
  | 
  | 
200  | 
mA  | 
||
ITSM  | 
Surge on-state current  | 
10ms half sine wave VR=0.6VRRM  | 
125  | 
  | 
  | 
35.6  | 
kA  | 
||
I2t  | 
I2t for fusing coordination  | 
  | 
  | 
6337  | 
A2s*103  | 
||||
VTO  | 
Threshold voltage  | 
  | 
125  | 
  | 
  | 
1.21  | 
V  | 
||
rT  | 
On-stateslop resistance  | 
  | 
  | 
0.10  | 
mΩ  | 
||||
| 
 
 VTM  | 
 
 Peak on-state voltage  | 
 
 ITM=4000A, F=40kN  | 
15≤tq≤35  | 
 
 25  | 
  | 
  | 
2.20  | 
V  | 
|
36≤tq≤50  | 
  | 
  | 
2.00  | 
V  | 
|||||
51≤tq≤75  | 
  | 
  | 
1.80  | 
V  | 
|||||
dv/dt  | 
Critical rate of rise of off-state voltage  | 
VDM=0.67VDRM  | 
125  | 
  | 
  | 
1000  | 
V/μs  | 
||
di/dt  | 
Critical rate of rise of on-state current  | 
 VDM= 67%VDRM to3000A Gate pulse tr ≤0.5μs IGM=1.5A  | 
125  | 
  | 
  | 
1500  | 
A/μs  | 
||
Qrr  | 
Recovery charge  | 
ITM=2000A, tp=4000µs, di/dt=-20A/µs, VR=100V  | 
125  | 
  | 
1300  | 
  | 
µC  | 
||
tq  | 
Circuit commutated turn-off time  | 
ITM=2000A, tp=4000µs, VR =100V dv/dt=30V/µs,di/dt=-20A/µs  | 
100  | 
15  | 
  | 
75  | 
 
 µs  | 
||
IGT  | 
Gate trigger current  | 
 
 VA=12V, IA=1A  | 
 
 25  | 
45  | 
  | 
300  | 
mA  | 
||
VGT  | 
Gate trigger voltage  | 
0.9  | 
  | 
4.5  | 
V  | 
||||
IH  | 
Holding current  | 
20  | 
  | 
500  | 
mA  | 
||||
IL  | 
Latching current  | 
  | 
  | 
1000  | 
mA  | 
||||
VGD  | 
Non-trigger gate voltage  | 
VDM=67%VDRM  | 
125  | 
  | 
  | 
0.3  | 
V  | 
||
Rth(j-c)  | 
Thermal resistance Junction to case  | 
At 180°sine, double side cooled Clamping force 40kN  | 
  | 
  | 
  | 
0.010  | 
 
 ℃ /W  | 
||
Rth(c-h)  | 
Thermal resistance case to heat sink  | 
  | 
  | 
  | 
0.003  | 
||||
Fm  | 
Mounting force  | 
  | 
  | 
35  | 
  | 
47  | 
kN  | 
||
Tvj  | 
Junction temperature  | 
  | 
  | 
-40  | 
  | 
125  | 
℃  | 
||
Tstg  | 
Stored temperature  | 
  | 
  | 
-40  | 
  | 
140  | 
℃  | 
||
Wt  | 
Weight  | 
  | 
  | 
  | 
1100/ 1460  | 
  | 
g  | 
||
Outline  | 
KT73cT/ KT73dT  | 
||||||||

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