Brief introduction
IGBT module,produced by STARPOWER. 1200V 260A.
Features
- Low VCE(sat) Trench IGBT technology
- Low switching losses
- 6μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175oC
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper pinfin baseplate using DBC technology
Typical Applications
- Automotive application
- Hybrid and electric vehicle
- Inverter for motor drive
Absolute Maximum Ratings TF=25oC unless otherwise noted
IGBT
Symbol |
Description |
Values |
Unit |
VCES |
Collector-Emitter Voltage |
1200 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
ICN |
Implemented Collector Current |
260 |
A |
IC |
Collector Current @ TF=125oC |
150 |
A |
ICM |
Pulsed Collector Current tp=1ms |
520 |
A |
PD |
Maximum Power Dissipation @ TF=75oC Tvj=175oC |
526 |
W |
Diode
Symbol |
Description |
Values |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
IFN |
Implemented Collector Current |
260 |
A |
IF |
Diode Continuous Forward Current |
150 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
520 |
A |
Module
Symbol |
Description |
Value |
Unit |
Tvjmax |
Maximum Junction Temperature |
175 |
oC |
|
Tvjop
|
Operating Junction Temperature continuous
For 10s within a period of 30s,occurrence maximum 3000 times over lifetime
|
-40 to +150 +150 to +175 |
oC |
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
2500 |
V |
IGBT Characteristics TF=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat)
|
Collector to Emitter Saturation Voltage
|
IC=150A,VGE=15V, Tvj=25oC |
|
1.15 |
1.50 |
V
|
IC=150A,VGE=15V, Tvj=125oC |
|
1.20 |
|
IC=150A,VGE=15V, Tvj=150oC |
|
1.20 |
|
IC=260A,VGE=15V, Tvj=25oC |
|
1.35 |
|
IC=260A,VGE=15V, Tvj=150oC |
|
1.55 |
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=10.4mA,VCE=VGE, Tvj=25oC |
|
6.4 |
|
V |
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tvj=25oC |
|
|
1.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tvj=25oC |
|
|
400 |
nA |
RGint |
Internal Gate Resistance |
|
|
2.50 |
|
Ω |
Cies |
Input Capacitance |
VCE=25V,f=100kHz, VGE=0V
|
|
54.1 |
|
nF |
Coes |
Output Capacitance |
|
1.04 |
|
nF |
Cres |
Reverse Transfer Capacitance |
|
0.35 |
|
nF |
QG |
Gate Charge |
VCE =600V,IC =260A, VGE=-8…+15V |
|
3.54 |
|
μC |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=150A,
RG=3.3Ω,
VGE=-8V/+15V,
LS=35nH,Tvj=25oC
|
|
345 |
|
ns |
tr |
Rise Time |
|
61 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
933 |
|
ns |
tf |
Fall Time |
|
105 |
|
ns |
Eon |
Turn-On Switching Loss |
|
19.6 |
|
mJ |
Eoff |
Turn-Off Switching Loss |
|
11.0 |
|
mJ |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=150A, RG=3.3Ω,
VGE=-8V/+15V,
LS=35nH,Tvj=125oC
|
|
376 |
|
ns |
tr |
Rise Time |
|
69 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
1052 |
|
ns |
tf |
Fall Time |
|
164 |
|
ns |
Eon |
Turn-On Switching Loss |
|
25.3 |
|
mJ |
Eoff |
Turn-Off Switching Loss |
|
14.3 |
|
mJ |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=150A, RG=3.3Ω,
VGE=-8V/+15V,
LS=35nH,Tvj=150oC
|
|
382 |
|
ns |
tr |
Rise Time |
|
73 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
1085 |
|
ns |
tf |
Fall Time |
|
185 |
|
ns |
Eon |
Turn-On Switching Loss |
|
27.6 |
|
mJ |
Eoff |
Turn-Off Switching Loss |
|
15.7 |
|
mJ |
ISC |
SC Data |
tP≤6μs,VGE=15V,
Tvj=150oC,VCC=800V, VCEM≤1200V
|
|
800 |
|
A |
Diode Characteristics TF=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VF
|
Diode Forward Voltage
|
IF=150A,VGE=0V,Tvj=25oC |
|
1.45 |
1.80 |
V
|
IF=150A,VGE=0V,Tvj=125oC |
|
1.40 |
|
IF=150A,VGE=0V,Tvj=150oC |
|
1.35 |
|
IF=260A,VGE=0V,Tvj=25oC |
|
1.65 |
|
IF=260A,VGE=0V,Tvj=150oC |
|
1.65 |
|
Qr |
Recovered Charge |
VR=600V,IF=150A,
-di/dt=2690A/μs,VGE=-8V LS=35nH,Tvj=25oC
|
|
14.2 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
123 |
|
A |
Erec |
Reverse Recovery Energy |
|
3.79 |
|
mJ |
Qr |
Recovered Charge |
VR=600V,IF=150A,
-di/dt=2210A/μs,VGE=-8V LS=35nH,Tvj=125oC
|
|
24.3 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
137 |
|
A |
Erec |
Reverse Recovery Energy |
|
6.30 |
|
mJ |
Qr |
Recovered Charge |
VR=600V,IF=150A,
-di/dt=2130A/μs,VGE=-8V LS=35nH,Tvj=150oC
|
|
27.3 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
142 |
|
A |
Erec |
Reverse Recovery Energy |
|
7.08 |
|
mJ |
NTC Characteristics TF=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
R25 |
Rated Resistance |
|
|
5.0 |
|
kΩ |
∆R/R |
Deviation of R100 |
TC=100 oC,R100=493.3Ω |
-5 |
|
5 |
% |
P25 |
Power
Dissipation
|
|
|
|
20.0 |
mW |
B25/50 |
B-value |
R2=R25exp[B25/50(1/T2- 1/(298.15K))] |
|
3375 |
|
K |
B25/80 |
B-value |
R2=R25exp[B25/80(1/T2- 1/(298.15K))] |
|
3411 |
|
K |
B25/100 |
B-value |
R2=R25exp[B25/100(1/T2- 1/(298.15K))] |
|
3433 |
|
K |
Module Characteristics TF=25oC unless otherwise noted
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
△p |
Pressure Drop Cooling Circuit
ΔV/Δt=10.0dm3/min;TF=25 oC;Cooling Fluid=50% Water/50% Ethylene Glycol
|
|
50
|
|
mbar
|
p |
Maximum Pressure In Cooling Circuit |
|
|
2.0 |
bar |
|
RthJF
|
Junction-to-Cooling Fluid (perIGBT) Junction-to-Cooling Fluid (per Diode) △V/△t=10.0dm3/min,TF=75oC |
|
0.165 0.265 |
0.190 0.305 |
K/W
|
M |
Terminal Connection Torque, Screw M6 Mounting Torque, Screw M5 |
3.0 3.0 |
|
6.0 6.0 |
N.m |
G |
Weight of Module |
|
685 |
|
g |
EN
