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IT(AV) | 1260A |
VDRM,VRRM | 1200V 1400V |
tq | 12~28µs |
Features
Typical Applications
SYMBOL |
CHARACTERISTIC |
TEST CONDITIONS | Tj(℃) | VALUE |
UNIT | |||
Min | Type | Max | ||||||
IT(AV) | Mean on-state current | 180°half sine wave 50Hz Double side cooled, | TC=55。C | 125 |
|
| 1260 | A |
VDRM VRRM | Repetitive peak off-state voltage Repetitive peak reverse voltage | tp=10ms | 125 | 1100 |
| 1400 | V | |
IDRM IRRM | Repetitive peak off-state current Repetitive peak reverse current | at VDRM at VRRM | 125 |
|
| 80 | mA | |
ITSM | Surge on-state current | 10ms half sine wave VR=0.6VRRM | 125 |
|
| 16.3 | kA | |
I2t | I2T for fusing coordination |
|
| 1328 | A2s*103 | |||
VTO | Threshold voltage |
| 125 |
|
| 1.65 | V | |
rT | On-stateslop resistance |
|
| 0.36 | mΩ | |||
VTM | Peak on-state voltage | ITM=2400A, F=24kN | 25 |
|
| 3.20 | V | |
dv/dt | Critical rate of rise of off-state voltage | VDM=0.67VDRM | 125 |
|
| 1000 | V/μs | |
di/dt | Critical rate of rise of on-state current | VDM= 67%VDRM, to2000A Gate pulse tr ≤0.5μs IGM=1.5A | 125 |
|
| 1500 | A/μs | |
Qrr | Recovery charge | ITM=1000A, tp=4000µs, di/dt=-20A/µs, VR=100V | 125 |
| 87 | 100 | µC | |
tq | Circuit commutated turn-off time | ITM=1000A, tp=4000µs, VR=100V dv/dt=30V/µs, di/dt=-20A/µs | 125 | 12 |
| 28 | µs | |
IGT | Gate trigger current |
VA=12V, IA=1A |
25 | 30 |
| 250 | mA | |
VGT | Gate trigger voltage | 0.8 |
| 3.0 | V | |||
IH | Holding current | 20 |
| 400 | mA | |||
IL | Latching current |
|
| 500 | mA | |||
VGD | Non-trigger gate voltage | VDM=67%VDRM | 125 |
|
| 0.3 | V | |
Rth(j-c) | Thermal resistance Junction to case | At 1800 sine, double side cooled Clamping force 24kN |
|
|
| 0.020 |
。C /W | |
Rth(c-h) | Thermal resistance case to heat sink |
|
|
| 0.005 | |||
Fm | Mounting force |
|
| 19 |
| 26 | kN | |
Tvj | Junction temperature |
|
| -40 |
| 125 | 。C | |
Tstg | Stored temperature |
|
| -40 |
| 140 | 。C | |
Wt | Weight |
|
|
| 440 |
| g | |
Outline | KT50cT |
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