|
SYMBOL
|
CHARACTERISTIC
|
TEST CONDITIONS
|
Tj(℃) |
VALUE |
UNIT
|
Min |
Type |
Max |
IT(AV) |
Mean on-state current |
180°half sine wave 50Hz Double side cooled, |
TC=55。C |
125 |
|
|
1260 |
A |
VDRM VRRM |
Repetitive peak off-state voltage Repetitive peak reverse voltage |
tp=10ms |
125 |
1100 |
|
1400 |
V |
IDRM IRRM |
Repetitive peak off-state current Repetitive peak reverse current |
at VDRM at VRRM |
125 |
|
|
80 |
mA |
ITSM |
Surge on-state current |
10ms half sine wave VR=0.6VRRM |
125 |
|
|
16.3 |
kA |
I2t |
I2T for fusing coordination |
|
|
1328 |
A2s*103 |
VTO |
Threshold voltage |
|
125 |
|
|
1.65 |
V |
rT |
On-stateslop resistance |
|
|
0.36 |
mΩ |
VTM |
Peak on-state voltage |
ITM=2400A, F=24kN |
25 |
|
|
3.20 |
V |
dv/dt |
Critical rate of rise of off-state voltage |
VDM=0.67VDRM |
125 |
|
|
1000 |
V/μs |
di/dt |
Critical rate of rise of on-state current |
VDM= 67%VDRM, to2000A
Gate pulse tr ≤0.5μs IGM=1.5A
|
125 |
|
|
1500 |
A/μs |
Qrr |
Recovery charge |
ITM=1000A, tp=4000µs, di/dt=-20A/µs, VR=100V |
125 |
|
87 |
100 |
µC |
tq |
Circuit commutated turn-off time |
ITM=1000A, tp=4000µs, VR=100V dv/dt=30V/µs, di/dt=-20A/µs |
125 |
12 |
|
28 |
µs |
IGT |
Gate trigger current |
VA=12V, IA=1A
|
25
|
30 |
|
250 |
mA |
VGT |
Gate trigger voltage |
0.8 |
|
3.0 |
V |
IH |
Holding current |
20 |
|
400 |
mA |
IL |
Latching current |
|
|
500 |
mA |
VGD |
Non-trigger gate voltage |
VDM=67%VDRM |
125 |
|
|
0.3 |
V |
Rth(j-c) |
Thermal resistance Junction to case |
At 1800 sine, double side cooled Clamping force 24kN |
|
|
|
0.020 |
。C /W
|
Rth(c-h) |
Thermal resistance case to heat sink |
|
|
|
0.005 |
Fm |
Mounting force |
|
|
19 |
|
26 |
kN |
Tvj |
Junction temperature |
|
|
-40 |
|
125 |
。C |
Tstg |
Stored temperature |
|
|
-40 |
|
140 |
。C |
Wt |
Weight |
|
|
|
440 |
|
g |
Outline |
KT50cT |
EN
