MTx400 MFx400 MT400,Thyristor/Diode Modules,Water Cooling

VRRM,VDRM

Type & Outline

2000V

2200V

2500V

2500V

MTx400-20-405F3

MTx400-22-405F3

MTx400-25-405F3

MT400-25-405F3G

MFx400-20-405F3

MFx400-22-405F3

MFx400-25-405F3

MTx stands for any type of MTC, MTA, MTK

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IT(AV)

Mean on-state current

180°half sine wave 50Hz

Single side cooled, TC=55。C

125

400

A

IT(RMS)

RMS on-state current

628

A

IDRM IRRM

Repetitive peak current

at VDRM at VRRM

125

45

mA

ITSM

Surge on-state current

VR=60%VRRM,t= 10ms half sine,

125

11

kA

I2t

I2t for fusing coordination

125

605

10³A2^s

VTO

Threshold voltage

125

0.82

V

rT

On-state slope resistance

0.79

mΩ

VTM

Peak on-state voltage

ITM= 1200A

25

2.18

V

dv/dt

Critical rate of rise of off-state voltage

VDM=67%VDRM

125

1000

V/μs

di/dt

Critical rate of rise of on-state current

Gate source 1.5A

tr ≤0.5μs Repetitive

125

200

A/μs

IGT

Gate trigger current

VA= 12V, IA= 1A

25

30

200

mA

VGT

Gate trigger voltage

0.8

3.0

V

IH

Holding current

10

200

mA

IL

Latching current

1000

mA

VGD

Non-trigger gate voltage

VDM=67%VDRM

125

0.20

V

Rth(j-c)

Thermal resistance Junction to case

Single side cooled per chip

0.11

℃/W

Rth(c-h)

Thermal resistance case to heatsink

Single side cooled per chip

0.04

℃/W

Viso

Isolation voltage

50Hz,R.M.S,t= 1min,Iiso:1mA(MAX)

3000

V

Fm

Terminal connection torque(M12)

12

14

N·m

Mounting torque(M6)

4.5

6

N·m

Tvj

Junction temperature

-40

125

℃

Tstg

Stored temperature

-40

125

℃

Wt

Weight

1060

g

Outline

405F3