Brief introduction
IGBT module, produced by STARPOWER. 1200V 400A.
Features
- 10μs short circuit capability
- Low switching losses
- Rugged with ultrafast performance
- VCE(sat) with positive temperature coefficient
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
Typical Applications
- Switching mode power supplies
- Inductive heating
- Electronic welder
Absolute Maximum Ratings TC=25℃ unless otherwise noted
Symbol |
Description |
GD400HFU120C2S |
Units |
VCES |
Collector-Emitter Voltage |
1200 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current @ TC=25℃
@ TC=80℃
|
660
400
|
A |
ICM(1) |
Pulsed Collector Current tp=1ms |
800 |
A |
IF |
Diode Continuous Forward Current |
400 |
A |
IFM(1) |
Diode Maximum Forward Current |
800 |
A |
PD |
Maximum power Dissipation @ Tj= 150℃ |
2660 |
W |
TSC |
Short Circuit Withstand Time @ Tj=125℃ |
10 |
μs |
Tj |
Maximum Junction Temperature |
150 |
℃ |
TSTG |
Storage Temperature Range |
-40 to +125 |
℃ |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
2500 |
V |
Mounting Torque |
Power Terminal Screw:M6 |
2.5 to 5.0 |
N.m |
Mounting Screw:M6 |
3.0 to 6.0 |
N.m |
Electrical Characteristics of IGBT TC=25℃ unless otherwise noted
Off Characteristics
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
V(BR)CES |
Collector-Emitter
Breakdown Voltage
|
Tj=25℃ |
1200 |
|
|
V |
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25℃ |
|
|
5.0 |
mA |
IGES |
Gate-Emitter Leakage
Current
|
VGE=VGES,VCE=0V, Tj=25℃ |
|
|
400 |
nA |
On Characteristics
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
VGE(th) |
Gate-Emitter Threshold
Voltage
|
IC=4.0mA,VCE=VGE, Tj=25℃ |
4.4 |
4.9 |
6.0 |
V |
|
VCE(sat)
|
Collector to Emitter
Saturation Voltage
|
IC=400A,VGE=15V, Tj=25℃ |
|
3.10 |
3.60 |
V
|
IC=400A,VGE=15V, Tj= 125℃ |
|
3.45 |
|
Switching Characteristics
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=400A, RG=2.2Ω,VGE=±15 V, Tj=25℃
|
|
680 |
|
ns |
tr |
Rise Time |
|
142 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
638 |
|
ns |
tf |
Fall Time |
|
99 |
|
ns |
Eon |
Turn-On Switching
Loss
|
|
19.0 |
|
mJ |
Eoff |
Turn-Off Switching
Loss
|
|
32.5 |
|
mJ |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=400A, RG=2.2Ω,VGE=±15 V, Tj= 125℃
|
|
690 |
|
ns |
tr |
Rise Time |
|
146 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
669 |
|
ns |
tf |
Fall Time |
|
108 |
|
ns |
Eon |
Turn-On Switching
Loss
|
|
26.1 |
|
mJ |
Eoff |
Turn-Off Switching
Loss
|
|
36.7 |
|
mJ |
Cies |
Input Capacitance |
VCE=30V,f=1MHz,
VGE=0V
|
|
33.7 |
|
nF |
Coes |
Output Capacitance |
|
2.99 |
|
nF |
Cres |
Reverse Transfer
Capacitance
|
|
1.21 |
|
nF |
|
ISC
|
SC Data
|
TP ≤10μs,VGE=15 V, Tj=25℃,
VCC=600V, VCEM≤1200V
|
|
2600
|
|
A
|
RGint |
Internal Gate Resistance |
|
|
0.5 |
|
Ω |
LCE |
Stray Inductance |
|
|
|
18 |
nH |
RCC’+EE ’ |
Module Lead Resistance, Terminal To Chip |
TC=25℃ |
|
0.32 |
|
mΩ |
Electrical Characteristics of DIODE TC=25℃ unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
VF |
Diode Forward
Voltage
|
IF=400A |
Tj=25℃ |
|
1.95 |
2.35 |
V |
Tj= 125℃ |
|
1.85 |
|
Qr |
Recovered Charge |
IF=400A,
VR=600 V,
di/dt=-2850A/μs, VGE=- 15V
|
Tj=25℃ |
|
24.1 |
|
μC |
Tj= 125℃ |
|
44.3 |
|
IRM |
Peak Reverse
Recovery Current
|
Tj=25℃ |
|
220 |
|
A |
Tj= 125℃ |
|
295 |
|
Erec |
Reverse Recovery Energy |
Tj=25℃ |
|
13.9 |
|
mJ |
Tj= 125℃ |
|
24.8 |
|
Thermal Characteristics
Symbol |
Parameter |
Typ. |
Max. |
Units |
RθJC |
Junction-to-Case (per IGBT) |
|
0.047 |
K/W |
RθJC |
Junction-to-Case (per DIODE) |
|
0.096 |
K/W |
RθCS |
Case-to-Sink (Conductive grease applied) |
0.035 |
|
K/W |
G |
Weight of Module |
350 |
|
g |
EN
