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IT(AV) | 4200A |
VDRM,VRRM | 7500V 8000V 8500V |
Features:
Typical Applications:
SYMBOL |
CHARACTERISTIC |
TEST CONDITIONS | Tj(℃) | VALUE |
UNIT | |||
Min | Type | Max | ||||||
IT(AV) | Mean on-state current | 180°half sine wave 50Hz Double side cooled | TC=70℃ | 100 |
|
| 4200 | A |
VDRM VRRM | Repetitive peak off-state voltage Repetitive peak reverse voltage | tp=10ms | 125 | 7300 |
| 8500 | V | |
IDRM IRRM |
Repetitive peak current | at VDRM at VRRM | 100 |
|
| 800 | mA | |
@7000V, DC | 25 |
|
| 100 | μA | |||
ITSM | Surge on-state current | 10ms half sine wave VR=0.6VRRM |
100 |
|
| 100 | kA | |
I2t | I2t for fusing coordination |
|
| 50000 | 103A2s | |||
VTO | Threshold voltage |
|
100 |
|
| 1.56 | V | |
rT | On-state slope resistance |
|
| 0.12 | mΩ | |||
VTM | Peak on-state voltage | ITM=5000A, F=120kN | 25 |
|
| 2.40 | V | |
dv/dt | Critical rate of rise of off-state voltage | VDM=0.67VDRM | 100 |
|
| 2000 | V/μs | |
di/dt | Critical rate of rise of on-state current | VDM= 67%VDRM, Gate pulse tr ≤0.5μs IGM=1.5A | 100 |
|
| 600 | A/μs | |
Qrr | Recovery charge | ITM=3000A, tp=4000µs, di/dt=-5A/µs, VR=100V | 100 |
| 9200 |
| µC | |
IGT | Gate trigger current |
VA=12V, IA=1A |
25 | 40 |
| 300 | mA | |
VGT | Gate trigger voltage | 0.8 |
| 3.5 | V | |||
IH | Holding current | 20 |
| 1000 | mA | |||
IL | Latching current |
|
| 1000 | mA | |||
VGD | Non-trigger gate voltage | VDM=67%VDRM | 100 |
|
| 0.3 | V | |
Rth(j-c) | Thermal resistance Junction to case | At 180。sine, double side cooled Clamping force120kN |
|
|
| 0.0020 |
。C /W | |
Rth(c-h) | Thermal resistance case to heatsink |
|
|
| 0.0005 | |||
Fm | Mounting force |
|
| 165 | 175 | 190 | kN | |
Tvj | Junction temperature |
|
| -40 |
| 100 | ℃ | |
Tstg | Stored temperature |
|
| -40 |
| 140 | ℃ | |
Wt | Weight |
|
|
| 4000 |
| g | |
Outline | KT140cT |
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