|
SYMBOL
|
CHARACTERISTIC
|
TEST CONDITIONS
|
Tj(℃) |
VALUE |
UNIT
|
Min |
Type |
Max |
IT(AV) |
Mean on-state current |
180°half sine wave 50Hz Double side cooled |
TC=70℃ |
100 |
|
|
4200 |
A |
VDRM VRRM |
Repetitive peak off-state voltage Repetitive peak reverse voltage |
tp=10ms |
125 |
7300 |
|
8500 |
V |
IDRM IRRM |
Repetitive peak current
|
at VDRM at VRRM |
100 |
|
|
800 |
mA |
@7000V, DC |
25 |
|
|
100 |
μA |
ITSM |
Surge on-state current |
10ms half sine wave VR=0.6VRRM |
100
|
|
|
100 |
kA |
I2t |
I2t for fusing coordination |
|
|
50000 |
103A2s |
VTO |
Threshold voltage |
|
100
|
|
|
1.56 |
V |
rT |
On-state slope resistance |
|
|
0.12 |
mΩ |
VTM |
Peak on-state voltage |
ITM=5000A, F=120kN |
25 |
|
|
2.40 |
V |
dv/dt |
Critical rate of rise of off-state voltage |
VDM=0.67VDRM |
100 |
|
|
2000 |
V/μs |
di/dt |
Critical rate of rise of on-state current |
VDM= 67%VDRM,
Gate pulse tr ≤0.5μs IGM=1.5A
|
100 |
|
|
600 |
A/μs |
Qrr |
Recovery charge |
ITM=3000A, tp=4000µs, di/dt=-5A/µs, VR=100V |
100 |
|
9200 |
|
µC |
IGT |
Gate trigger current |
VA=12V, IA=1A
|
25
|
40 |
|
300 |
mA |
VGT |
Gate trigger voltage |
0.8 |
|
3.5 |
V |
IH |
Holding current |
20 |
|
1000 |
mA |
IL |
Latching current |
|
|
1000 |
mA |
VGD |
Non-trigger gate voltage |
VDM=67%VDRM |
100 |
|
|
0.3 |
V |
Rth(j-c) |
Thermal resistance Junction to case |
At 180。sine, double side cooled Clamping force120kN |
|
|
|
0.0020 |
。C /W
|
Rth(c-h) |
Thermal resistance case to heatsink |
|
|
|
0.0005 |
Fm |
Mounting force |
|
|
165 |
175 |
190 |
kN |
Tvj |
Junction temperature |
|
|
-40 |
|
100 |
℃ |
Tstg |
Stored temperature |
|
|
-40 |
|
140 |
℃ |
Wt |
Weight |
|
|
|
4000 |
|
g |
Outline |
KT140cT |
EN
