|
SYMBOL
|
CHARACTERISTIC
|
TEST CONDITIONS
|
Tj(℃) |
VALUE |
UNIT
|
Min |
Type |
Max |
IT(AV) |
Mean on-state current |
180。half sine wave 50Hz Double side cooled, |
TC=55°C |
125 |
|
|
4500 |
A |
TC=70°C |
125 |
|
|
3800 |
A |
VDRM |
Repetitive peak off-state voltage |
tp=10ms |
125 |
4000 |
|
4500 |
V |
VRRM |
Repetitive peak reverse voltage |
125 |
1000 |
|
3000 |
V |
IDRM IRRM |
Repetitive peak current |
at VDRM at VRRM |
125 |
|
|
500 |
mA |
ITSM |
Surge on-state current |
10ms half sine wave VR=0.6VRRM |
125
|
|
|
50 |
kA |
I2t |
I2t for fusing coordination |
|
|
12500 |
103A2s |
VTO |
Threshold voltage |
|
125
|
|
|
1.58 |
V |
rT |
On-state slope resistance |
|
|
0.15 |
mΩ |
|
VTM
|
Peak on-state voltage |
ITM=5000A, F=70kN。
|
60 |
25 |
|
|
2.60 |
V
|
101 |
25 |
|
|
2.00 |
dv/dt |
Critical rate of rise of off-state voltage |
VDM=0.67VDRM |
125 |
|
|
1000 |
V/μs |
di/dt |
Critical rate of rise of on-state current |
VDM= 67%VDRM to4000A
Gate pulse tr ≤0.5μs IGM= 1.5A
|
125 |
|
|
1200 |
A/μs |
Qrr |
Recovery charge |
ITM=2000A, tp=4000µs, di/dt=-5A/µs, VR=100V |
125 |
|
2500 |
4000 |
µC |
tq |
Circuit commutated turn-off time |
ITM=2000A, tp=4000µs, VR= 100V dv/dt=30V/µs, di/dt=-5A/µs |
125 |
60 |
100 |
200 |
µs |
IGT |
Gate trigger current |
VA= 12V, IA= 1A
|
25
|
50 |
|
300 |
mA |
VGT |
Gate trigger voltage |
0.8 |
|
3.5 |
V |
IH |
Holding current |
20 |
|
1000 |
mA |
IL |
Latching current |
|
|
1500 |
mA |
VGD |
Non-trigger gate voltage |
VDM=67%VDRM |
125 |
|
|
0.25 |
V |
Rth(j-c) |
Thermal resistance junction to case |
Double side cooled Clamping force 40kN |
|
|
|
0.005 |
℃/W |
Rth(c-h) |
Thermal resistance case to heat sink |
|
|
|
0.0015 |
Fm |
Mounting force |
|
|
81 |
|
108 |
kN |
Tvj |
Junction temperature |
|
|
-40 |
|
125 |
℃ |
Tstg |
Stored temperature |
|
|
-40 |
|
140 |
℃ |
Wt |
Weight |
|
|
|
1880 |
|
g |
Outline |
KT100cT |
EN
