GD600HFX120C2S,IGBT Module,STARPOWER

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1200

V

VGES

Gate-Emitter Voltage

Transient Gate-Emitter Voltage

±20

±30

V

IC

Collector Current @ TC=25oC

@ TC=90oC

873

600

A

ICM

Pulsed Collector Current tp=1ms

1200

A

PD

Maximum Power Dissipation @ Tj=175oC

2727

W

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

1200

V

IF

Diode Continuous Forward Current

600

A

IFM

Diode Maximum Forward Current tp=1ms

1200

A

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

175

oC

Tjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage RMS,f=50Hz,t=1min

2500

V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter

Saturation Voltage

IC=600A,VGE=15V, Tj=25oC

1.75

2.20

V

IC=600A,VGE=15V, Tj=125oC

2.00

IC=600A,VGE=15V, Tj=150oC

2.05

VGE(th)

Gate-Emitter Threshold Voltage

IC=24.0mA,VCE=VGE, Tj=25oC

5.6

6.2

6.8

V

ICES

Collector Cut-Off

Current

VCE=VCES,VGE=0V,

Tj=25oC

1.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25oC

400

nA

RGint

Internal Gate Resistance

0.7

Ω

Cies

Input Capacitance

VCE=25V,f=1MHz,

VGE=0V

55.9

nF

Cres

Reverse Transfer

Capacitance

1.57

nF

QG

Gate Charge

VGE=- 15…+15V

4.20

μC

td(on)

Turn-On Delay Time

VCC=600V,IC=600A, RG=1.5Ω

,LS=34nH, VGE=±15V,Tj=25oC

109

ns

tr

Rise Time

62

ns

td(off)

Turn-Off Delay Time

469

ns

tf

Fall Time

68

ns

Eon

Turn-On Switching

Loss

42.5

mJ

Eoff

Turn-Off Switching

Loss

46.0

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=600A, RG=1.5Ω,

LS=34nH,

VGE=±15V,Tj=125oC

143

ns

tr

Rise Time

62

ns

td(off)

Turn-Off Delay Time

597

ns

tf

Fall Time

107

ns

Eon

Turn-On Switching

Loss

56.5

mJ

Eoff

Turn-Off Switching

Loss

70.5

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=600A, RG=1.5Ω,

LS=34nH,

VGE=±15V,Tj=150oC

143

ns

tr

Rise Time

68

ns

td(off)

Turn-Off Delay Time

637

ns

tf

Fall Time

118

ns

Eon

Turn-On Switching

Loss

61.2

mJ

Eoff

Turn-Off Switching

Loss

77.8

mJ

ISC

SC Data

tP≤10μs,VGE=15V,

Tj=150oC,VCC=800V, VCEM≤1200V

2400

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward

Voltage

IF=600A,VGE=0V,Tj=25oC

1.95

2.40

V

IF=600A,VGE=0V,Tj=125oC

2.05

IF=600A,VGE=0V,Tj=150oC

2.10

Qr

Recovered Charge

VCC=600V,IF=600A,

-di/dt=4300A/μs,VGE=- 15V, LS=34nH,Tj=25oC

58.9

μC

IRM

Peak Reverse

Recovery Current

276

A

Erec

Reverse Recovery Energy

20.9

mJ

Qr

Recovered Charge

VCC=600V,IF=600A,

-di/dt=4300A/μs,VGE=- 15V, LS=34nH,Tj=125oC

109

μC

IRM

Peak Reverse

Recovery Current

399

A

Erec

Reverse Recovery Energy

41.8

mJ

Qr

Recovered Charge

VCC=600V,IF=600A,

-di/dt=4300A/μs,VGE=- 15V, LS=34nH,Tj=150oC

124

μC

IRM

Peak Reverse

Recovery Current

428

A

Erec

Reverse Recovery Energy

48.5

mJ

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

20

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

0.35

mΩ

RthJC

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

0.055

0.089

K/W

RthCH

Case-to-Heatsink (per IGBT)

Case-to-Heatsink (per Diode)

Case-to-Heatsink (per Module)

0.032

0.052

0.010

K/W

M

Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6

2.5

3.0

5.0

5.0

N.m

G

Weight of Module

300

g