Brief introduction
IGBT module, produced by STARPOWER. 1200V 450A.
Features
-
Low VCE(sat) Trench IGBT technology
-
10μs short circuit capability
-
VCE(sat) with positive temperature coefficient
-
Maximum junction temperature 175oC
-
Low inductance case
-
Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
Typical Applications
-
Inverter for motor drive
-
AC and DC servo drive amplifier
-
Uninterruptible power supply
Absolute Maximum Ratings TC=25oC unless otherwise noted
IGBT
Symbol |
Description |
Value |
Unit |
VCES |
Collector-Emitter Voltage |
1200 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current @ TC=25oC
@ TC= 100oC
|
680
450
|
A |
ICM |
Pulsed Collector Current tp=1ms |
900 |
A |
PD |
Maximum Power Dissipation @ T =175oC |
2173 |
W |
Diode
Symbol |
Description |
Value |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
IF |
Diode Continuous Forward Current |
450 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
900 |
A |
Module
Symbol |
Description |
Value |
Unit |
Tjmax |
Maximum Junction Temperature |
175 |
oC |
Tjop |
Operating Junction Temperature |
-40 to +150 |
oC |
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
IGBT Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat)
|
Collector to Emitter
Saturation Voltage
|
IC=450A,VGE=15V, Tj=25oC |
|
1.70 |
2.05 |
V
|
IC=450A,VGE=15V, Tj=125oC |
|
1.95 |
|
IC=450A,VGE=15V, Tj=150oC |
|
2.00 |
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=11.3mA,VCE=VGE, Tj=25oC |
5.2 |
6.0 |
6.8 |
V |
ICES |
Collector Cut-Off
Current
|
VCE=VCES,VGE=0V,
Tj=25oC
|
|
|
1.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25oC |
|
|
400 |
nA |
RGint |
Internal Gate Resistance |
|
|
1.7 |
|
Ω |
Cies |
Input Capacitance |
VCE=25V,f=1MHz,
VGE=0V
|
|
46.6 |
|
nF |
Cres |
Reverse Transfer
Capacitance
|
|
1.31 |
|
nF |
QG |
Gate Charge |
VGE=- 15…+15V |
|
3.50 |
|
μC |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=450A, RG=1.5Ω,
VGE=±15V, Tj=25oC
|
|
328 |
|
ns |
tr |
Rise Time |
|
76 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
539 |
|
ns |
tf |
Fall Time |
|
108 |
|
ns |
Eon |
Turn-On Switching
Loss
|
|
19.5 |
|
mJ |
Eoff |
Turn-Off Switching
Loss
|
|
46.6 |
|
mJ |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=450A, RG=1.5Ω,
VGE=±15V, Tj=125oC
|
|
376 |
|
ns |
tr |
Rise Time |
|
86 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
595 |
|
ns |
tf |
Fall Time |
|
214 |
|
ns |
Eon |
Turn-On Switching
Loss
|
|
36.3 |
|
mJ |
Eoff |
Turn-Off Switching
Loss
|
|
53.5 |
|
mJ |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=450A, RG=1.5Ω,
VGE=±15V, Tj=150oC
|
|
380 |
|
ns |
tr |
Rise Time |
|
89 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
608 |
|
ns |
tf |
Fall Time |
|
232 |
|
ns |
Eon |
Turn-On Switching
Loss
|
|
41.7 |
|
mJ |
Eoff |
Turn-Off Switching
Loss
|
|
55.5 |
|
mJ |
|
ISC
|
SC Data
|
tP≤10μs,VGE=15V,
Tj=150oC,VCC=800V, VCEM≤1200V
|
|
1800
|
|
A
|
Diode Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VF
|
Diode Forward
Voltage
|
IF=450A,VGE=0V,Tj=25oC |
|
1.65 |
2.10 |
V
|
IF=450A,VGE=0V,Tj=125oC |
|
1.65 |
|
IF=450A,VGE=0V,Tj=150oC |
|
1.65 |
|
Qr |
Recovered Charge |
VCC=600V,IF=450A,
-di/dt=4370A/μs,VGE=- 15V, Tj=25oC
|
|
29.4 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
275 |
|
A |
Erec |
Reverse Recovery Energy |
|
13.2 |
|
mJ |
Qr |
Recovered Charge |
VCC=600V,IF=450A,
-di/dt=4370A/μs,VGE=- 15V, Tj=125oC
|
|
68.8 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
342 |
|
A |
Erec |
Reverse Recovery Energy |
|
31.6 |
|
mJ |
Qr |
Recovered Charge |
VCC=600V,IF=450A,
-di/dt=4370A/μs,VGE=- 15V, Tj=150oC
|
|
79.6 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
354 |
|
A |
Erec |
Reverse Recovery Energy |
|
35.8 |
|
mJ |
Module Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
LCE |
Stray Inductance |
|
|
20 |
nH |
RCC’+EE’ |
Module Lead Resistance, Terminal to Chip |
|
0.35 |
|
mΩ |
RthJC |
Junction-to-Case (per IGBT)
Junction-to-Case (per Diode)
|
|
|
0.069
0.108
|
K/W |
|
RthCH
|
Case-to-Heatsink (per IGBT)
Case-to-Heatsink (per Diode)
Case-to-Heatsink (per Module)
|
|
0.033
0.051
0.010
|
|
K/W |
M |
Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6 |
2.5
3.0
|
|
5.0
5.0
|
N.m |
G |
Weight of Module |
|
300 |
|
g |
EN
