GD450HFX120C2SA,IGBT Module,STARPOWER

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1200

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current @ TC=25oC @ TC=100oC

704

450

A

ICM

Pulsed Collector Current tp=1ms

900

A

PD

Maximum Power Dissipation @ Tvj=175oC

2307

W

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

1200

V

IF

Diode Continuous Forward Current

450

A

IFM

Diode Maximum Forward Current tp=1ms

900

A

Symbol

Description

Value

Unit

Tvjmax

Maximum Junction Temperature

175

oC

Tvjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage RMS,f=50Hz,t=1min

2500

V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter Saturation Voltage

IC=450A,VGE=15V, Tvj=25oC

1.70

2.15

V

IC=450A,VGE=15V, Tvj=125oC

1.95

IC=450A,VGE=15V, Tvj=150oC

2.00

VGE(th)

Gate-Emitter Threshold Voltage

IC=18.0mA,VCE=VGE, Tvj=25oC

5.6

6.2

6.8

V

ICES

Collector Cut-Off Current

VCE=VCES,VGE=0V, Tvj=25oC

1.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tvj=25oC

400

nA

RGint

Internal Gate Resistance

0.7

Ω

Cies

Input Capacitance

VCE=25V,f=1MHz, VGE=0V

46.6

nF

Cres

Reverse Transfer Capacitance

1.31

nF

QG

Gate Charge

VGE=-15…+15V

3.50

μC

td(on)

Turn-On Delay Time

VCC=600V,IC=450A, RG=1.5Ω,VGE=±15V, Ls=45nH,Tvj=25oC

284

ns

tr

Rise Time

78

ns

td(off)

Turn-Off Delay Time

388

ns

tf

Fall Time

200

ns

Eon

Turn-On Switching Loss

45.0

mJ

Eoff

Turn-Off Switching Loss

33.4

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=450A, RG=1.5Ω,VGE=±15V, Ls=45nH,Tvj=125oC

288

ns

tr

Rise Time

86

ns

td(off)

Turn-Off Delay Time

456

ns

tf

Fall Time

305

ns

Eon

Turn-On Switching Loss

60.1

mJ

Eoff

Turn-Off Switching Loss

48.4

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=450A, RG=1.5Ω,VGE=±15V, Ls=45nH,Tvj=150oC

291

ns

tr

Rise Time

88

ns

td(off)

Turn-Off Delay Time

472

ns

tf

Fall Time

381

ns

Eon

Turn-On Switching Loss

63.5

mJ

Eoff

Turn-Off Switching Loss

52.1

mJ

ISC

SC Data

tP≤10μs,VGE=15V,

Tvj=150oC,VCC=800V, VCEM≤1200V

1800

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward Voltage

IF=450A,VGE=0V,Tvj=25oC

1.90

2.35

V

IF=450A,VGE=0V,Tvj=125oC

2.00

IF=450A,VGE=0V,Tvj=150oC

2.05

Qr

Recovered Charge

VR=600V,IF=450A,

-di/dt=4500A/μs,VGE=-15V, Ls=45nH,Tvj=25oC

39.4

μC

IRM

Peak Reverse

Recovery Current

296

A

Erec

Reverse Recovery Energy

11.8

mJ

Qr

Recovered Charge

VR=600V,IF=450A,

-di/dt=4100A/μs,VGE=-15V, Ls=45nH,Tvj=125oC

58.6

μC

IRM

Peak Reverse

Recovery Current

309

A

Erec

Reverse Recovery Energy

17.7

mJ

Qr

Recovered Charge

VR=600V,IF=450A,

-di/dt=4000A/μs,VGE=-15V, Ls=45nH,Tvj=150oC

83.6

μC

IRM

Peak Reverse

Recovery Current

330

A

Erec

Reverse Recovery Energy

20.3

mJ

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

20

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

0.35

mΩ

RthJC

Junction-to-Case (perIGBT) Junction-to-Case (per Diode)

0.065 0.119

K/W

RthCH

Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module)

0.031 0.057 0.010

K/W

M

Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6

2.5 3.0

5.0 5.0

N.m

G

Weight of Module

300

g