GD300HFX170C2SA,IGBT Module,STARPOWER

Symbol

Description

Values

Unit

VCES

Collector-Emitter Voltage

1700

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current @ TC=25oC @ TC=100oC

493

300

A

ICM

Pulsed Collector Current tp=1ms

600

A

PD

Maximum Power Dissipation @ Tvj=175oC

1829

W

Symbol

Description

Values

Unit

VRRM

Repetitive Peak Reverse Voltage

1700

V

IF

Diode Continuous Forward Current

300

A

IFM

Diode Maximum Forward Current tp=1ms

600

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter Saturation Voltage

IC=300A,VGE=15V, Tvj=25oC

1.85

2.30

V

IC=300A,VGE=15V, Tvj=125oC

2.25

IC=300A,VGE=15V, Tvj=150oC

2.35

VGE(th)

Gate-Emitter Threshold Voltage

IC=12.0mA,VCE=VGE, Tvj=25oC

5.6

6.2

6.8

V

ICES

Collector Cut-Off Current

VCE=VCES,VGE=0V, Tvj=25oC

1.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tvj=25oC

400

nA

RGint

Internal Gate Resistance

2.5

Ω

Cies

Input Capacitance

VCE=25V,f=1MHz, VGE=0V

36.1

nF

Cres

Reverse Transfer Capacitance

0.88

nF

QG

Gate Charge

VGE=-15 …+15V

2.83

μC

td(on)

Turn-On Delay Time

VCC=900V,IC=300A, RG=2.4Ω, Ls=42nH, VGE=±15V,

Tvj=25oC

355

ns

tr

Rise Time

71

ns

td(off)

Turn-Off Delay Time

473

ns

tf

Fall Time

337

ns

Eon

Turn-On Switching Loss

89.3

mJ

Eoff

Turn-Off Switching Loss

46.3

mJ

td(on)

Turn-On Delay Time

VCC=900V,IC=300A, RG=2.4Ω, Ls=42nH, VGE=±15V,

Tvj=125oC

383

ns

tr

Rise Time

83

ns

td(off)

Turn-Off Delay Time

549

ns

tf

Fall Time

530

ns

Eon

Turn-On Switching Loss

126

mJ

Eoff

Turn-Off Switching Loss

68.5

mJ

td(on)

Turn-On Delay Time

VCC=900V,IC=300A, RG=2.4Ω, Ls=42nH, VGE=±15V,

Tvj=150oC

389

ns

tr

Rise Time

88

ns

td(off)

Turn-Off Delay Time

575

ns

tf

Fall Time

585

ns

Eon

Turn-On Switching Loss

139

mJ

Eoff

Turn-Off Switching Loss

73.4

mJ

ISC

SC Data

tP≤10μs,VGE=15V,

Tvj=150oC,VCC=1000V,

VCEM≤1700V

1200

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VF

Diode Forward Voltage

IF=300A,VGE=0V,Tvj=25oC

1.80

2.25

V

IF=300A,VGE=0V,Tvj=125oC

1.95

IF=300A,VGE=0V,Tvj=150oC

1.90

Qr

Recovered Charge

VR=900V,IF=300A,

-di/dt=3247A/μs,VGE=-15V Ls=42nH,Tvj=25oC

68

μC

IRM

Peak Reverse

Recovery Current

202

A

Erec

Reverse Recovery Energy

34.5

mJ

Qr

Recovered Charge

VR=900V,IF=300A,

-di/dt=2579A/μs,VGE=-15V Ls=42nH,Tvj=125oC

114

μC

IRM

Peak Reverse

Recovery Current

211

A

Erec

Reverse Recovery Energy

61.2

mJ

Qr

Recovered Charge

VR=900V,IF=300A,

-di/dt=2395A/μs,VGE=-15V Ls=42nH,Tvj=150oC

136

μC

IRM

Peak Reverse

Recovery Current

217

A

Erec

Reverse Recovery Energy

73.9

mJ

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

20

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

0.35

mΩ

RthJC

Junction-to-Case (perIGBT) Junction-to-Case (per Diode)

0.082 0.127

K/W

RthCH

Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module)

0.033 0.051 0.010

K/W

M

Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6

2.5 3.0

5.0 5.0

N.m

G

Weight of Module

300

g