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Brief introduction
Thyristor/Diode Module, MTx1000 MFx1000 MT1000,1000A,Water cooling,produced by TECHSEM .
VRRM,VDRM | Type & Outline | |
2000V | MTx1000-20-411F3 | MFx1000-20-411F3 |
2200V | MTx1000-22-411F3 | MFx1000-22-411F3 |
2500V | MTx1000-25-411F3 | MFx1000-25-411F3 |
2500V | MT1000-25-411F3G |
|
Features
Typical Applications
SYMBOL |
CHARACTERISTIC |
TEST CONDITIONS | Tj(℃) | VALUE |
UNIT | ||
Min | Type | Max | |||||
IT(AV) | Mean on-state current | 180。half sine wave 50Hz Single side cooled, THS=55℃ |
125 |
|
| 1000 | A |
IT(RMS) | RMS on-state current |
|
| 1570 | A | ||
IDRM IRRM | Repetitive peak current | at VDRM at VRRM | 125 |
|
| 50 | mA |
ITSM | Surge on-state current | VR=60%VRRM, t=10ms half sine | 125 |
|
| 18.0 | kA |
I2t | I2t for fusing coordination | 125 |
|
| 1620 | 103A2s | |
VTO | Threshold voltage |
|
125 |
|
| 0.85 | V |
rT | On-state slope resistance |
|
| 0.24 | mΩ | ||
VTM | Peak on-state voltage | ITM=3000A | 25 |
|
| 2.20 | V |
dv/dt | Critical rate of rise of off-state voltage | VDM=67%VDRM | 125 |
|
| 1000 | V/μs |
di/dt | Critical rate of rise of on-state current | Gate source 1.5A tr ≤0.5μs Repetitive | 125 |
|
| 200 | A/μs |
IGT | Gate trigger current |
VA= 12V, IA= 1A |
25 | 30 |
| 200 | mA |
VGT | Gate trigger voltage | 0.8 |
| 3.0 | V | ||
IH | Holding current | 10 |
| 200 | mA | ||
IL | Latching current |
|
| 1000 | mA | ||
VGD | Non-trigger gate voltage | VDM=67%VDRM | 125 |
|
| 0.20 | V |
Rth(j-c) | Thermal resistance Junction to case | Single side cooled per chip |
|
|
| 0.048 | 。C/W |
Rth(c-h) | Thermal resistance case to heatsink | Single side cooled per chip |
|
|
| 0.024 | 。C/W |
Viso | Isolation voltage | 50Hz,R.M.S,t= 1min,Iiso:1mA(MAX) |
| 3000 |
|
| V |
Fm | Terminal connection torque(M12) |
|
| 12 |
| 16 | N·m |
Mounting torque(M8) |
|
| 10 |
| 12 | N·m | |
Tvj | Junction temperature |
|
| -40 |
| 125 | ℃ |
Tstg | Stored temperature |
|
| -40 |
| 125 | ℃ |
Wt | Weight |
|
|
| 3230 |
| g |
Outline | 411F3 |
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