IGBT module GD820HFA75N6HY Starpower

Symbol

Description

Values

Unit

VCES

Collector-Emitter Voltage

750

V

VGES

Gate-Emitter Voltage

±20

V

ICN

Implemented Collector Current

820

A

IC

Collector Current @ TF=95oC Tvj=175oC

450

A

ICRM

Repetitive Peak Collector Current tp limited by Tvjop

1640

A

PD

Maximum Power Dissipation @ TF=65oC Tvj=175oC

909

W

Symbol

Description

Values

Unit

VRRM

Repetitive Peak Reverse Voltage

750

V

IFN

Implemented Collector Current

820

A

IF

Diode Continuous Forward Current

450

A

IFRM

Repetitive Peak Forward Current tp limited by Tvjop

1640

A

Symbol

Description

Value

Unit

Tvjmax

Maximum Junction Temperature

175

oC

Tvjop

Operating Junction Temperature continuous

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage RMS,f=50Hz,t=1min

2500

V

dCreep

Terminal to Heatsink Terminal to Terminal

7.3 7.3

mm

dClear

Terminal to Heatsink Terminal to Terminal

7.3 4.0

mm

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter Saturation Voltage

IC=680A,VGE=15V, Tvj=25oC

1.25

1.50

V

IC=680A,VGE=15V, Tvj=150oC

1.35

IC=680A,VGE=15V, Tvj=175oC

1.40

IC=820A,VGE=15V, Tvj=25oC

1.30

IC=820A,VGE=15V, Tvj=175oC

1.50

VGE(th)

Gate-Emitter Threshold Voltage

IC=12.9mA,VCE=VGE, Tvj=25oC

5.5

6.5

7.0

V

ICES

Collector Cut-Off Current

VCE=VCES,VGE=0V, Tvj=25oC

1.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tvj=25oC

400

nA

RGint

Internal Gate Resistance

1.0

Ω

Cies

Input Capacitance

VCE=50V,f=100kHz, VGE=0V

72.3

nF

Coes

Output Capacitance

1.51

nF

Cres

Reverse Transfer Capacitance

0.32

nF

QG

Gate Charge

VCE =400V, IC=680A, VGE=-10…+15V

4.10

μC

td(on)

Turn-On Delay Time

VCC=400V,IC=450A, RG=2.4Ω,LS=20nH, VGE=-8V/+15V,

Tvj=25oC

483

ns

tr

Rise Time

60

ns

td(off)

Turn-Off Delay Time

664

ns

tf

Fall Time

67

ns

Eon

Turn-On Switching Loss

16.3

mJ

Eoff

Turn-Off Switching Loss

17.4

mJ

td(on)

Turn-On Delay Time

VCC=400V,IC=450A, RG=2.4Ω,LS=20nH, VGE=-8V/+15V,

Tvj=150oC

507

ns

tr

Rise Time

76

ns

td(off)

Turn-Off Delay Time

750

ns

tf

Fall Time

125

ns

Eon

Turn-On Switching Loss

26.3

mJ

Eoff

Turn-Off Switching Loss

22.1

mJ

td(on)

Turn-On Delay Time

VCC=400V,IC=450A, RG=2.4Ω,LS=20nH, VGE=-8V/+15V,

Tvj=175oC

509

ns

tr

Rise Time

79

ns

td(off)

Turn-Off Delay Time

764

ns

tf

Fall Time

139

ns

Eon

Turn-On Switching Loss

27.6

mJ

Eoff

Turn-Off Switching Loss

23.0

mJ

ISC

SC Data

tP≤3μs,VGE=15V,

Tj=175oC,VCC=450V, VCEM≤750V

3300

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward Voltage

IF=680A,VGE=0V,Tvj=25oC

1.60

2.05

V

IF=680A,VGE=0V,Tvj=150oC

1.60

IF=680A,VGE=0V,Tvj=175oC

1.55

IF=820A,VGE=0V,Tvj=25oC

1.70

IF=820A,VGE=0V,Tvj=175oC

1.65

Qr

Recovered Charge

VR=400V,IF=450A,

-di/dt=8350A/μs,LS=20nH, VGE=-8V,Tvj=25oC

12.4

μC

IRM

Peak Reverse

Recovery Current

273

A

Erec

Reverse Recovery Energy

3.45

mJ

Qr

Recovered Charge

VR=400V,IF=450A,

-di/dt=6670A/μs,LS=20nH, VGE=-8V,Tvj=150oC

27.7

μC

IRM

Peak Reverse

Recovery Current

319

A

Erec

Reverse Recovery Energy

6.51

mJ

Qr

Recovered Charge

VR=400V,IF=450A,

-di/dt=6410A/μs,LS=20nH, VGE=-8V,Tvj=175oC

31.8

μC

IRM

Peak Reverse

Recovery Current

334

A

Erec

Reverse Recovery Energy

7.26

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

R

Nominal Resistance

TC=0 oC

TC=150 oC

1000

1573

Ω Ω

TCR

Temperature Coefficient

0.38

%/K

TSH

Self Heating

TC=0 oC

Im=0.1...0.3mA

0.4

K/mW

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

5

nH

p

Maximum Pressure In Cooling Circuit

2.5

bar

RthJF

Junction-to-Cooling Fluid (perIGBT) Junction-to-Cooling Fluid (per Diode) △V/△t=2.67 L/min,TF=65oC

0.105 0.157

0.121 0.181

K/W

M

Terminal Connection Torque, Screw M5 Mounting Torque, Screw M5

3.6 5.4

4.4 6.6

N.m

G

Weight of Module

220

g